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ZnO-based semiconductor nanostructures for optical quantum devices

Research Project

Project/Area Number 17310070
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Nanomaterials/Nanobioscience
Research InstitutionShizuoka University

Principal Investigator

TEMMYO Jiro  Shizuoka University, Research Institute of Electronics, Professor (90334961)

Co-Investigator(Kenkyū-buntansha) TANAKA Akira  Shizuoka University, Research Institute of Electronics, Associate Professor (50022265)
AOKI Toru  Shizuoka University, Research Institute of Electronics, Associate Professor (10283350)
Project Period (FY) 2005 – 2007
Project Status Completed (Fiscal Year 2007)
Budget Amount *help
¥15,330,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥630,000)
Fiscal Year 2007: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2006: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2005: ¥10,500,000 (Direct Cost: ¥10,500,000)
KeywordsZinoxide / Optical device / MOCVD / Quantum effect / Radical / 酸化亜鉛半導体薄膜 / 酸化物半導体 / 発効デバイス / 自己組織化ナノ構造 / 発光デバイス
Research Abstract

ZnO has some features such as a bandgap energy of 3.28 eV and an exciton binding energy of 60 meV as an important criterion for optical device applications. ZnO-based material system is expected for nexrgeneration optical semiconductor materials. However, we had some problems on epitaxial films quality, difficulties of bandgap engineering and p-type doping. In order to overcome these problems, we have deveopled remote-plasma-enhanced metalorganic chemical deposition system (RPE-MOCVD) for ZnO-based systems and succeeded in growth of ZnO(Mg, Cd) O alloy systems having bandgaps fron 3.7 ev down to 1.9 eV. We have done ZnO based double heterojunctions growth on p-4H-SiC substates and achieved RGB electroluminescence emissions via current injection. ZnO nanodots on Si substate abailable have revealed a blue-shift due to the quantum mechanical effect.
We have opend the research field oxide semiconductor nano-photonics. based on ZnO-based material systems.

Report

(4 results)
  • 2007 Annual Research Report   Final Research Report Summary
  • 2006 Annual Research Report
  • 2005 Annual Research Report
  • Research Products

    (26 results)

All 2008 2007 2006 2005 Other

All Journal Article (18 results) (of which Peer Reviewed: 6 results) Presentation (4 results) Remarks (2 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Optical properties of wurtzite Zn_<1-x>Cd_xO films grown bu RPE-MOCVD2007

    • Author(s)
      T. Ohashi K. Yamamoto A. Nakamura J. Temmyo
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 2516-2518

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Nonpolar(11-20)p-type nitrogen-doped ZnO-based ZnO by RPE-MOCVD2007

    • Author(s)
      S. Gangil A. Nakamura, M. Shimomura J, Temmyo
    • Journal Title

      Jpn. J. Appl. Phys. 46

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Vertically alighed single-crystal ZnO nanotubes grown on γ-LiAlO_2(100)substrate by MOCVD2007

    • Author(s)
      G. Zhang M. Adachi, S. Gangil A. Nakamura J. Temmyo Y. Matsui
    • Journal Title

      Jpn. J. Appl. Phys. 46

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Optical properties of wurzite Zn1-xCdxO films grown by RPE-MOCVD2007

    • Author(s)
      T. Ohashi K. Yamamoto A. Nakamura J. Temmyo
    • Journal Title

      Jpn. J. Appl. Phys 46

      Pages: 2516-2518

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Nonpolar (11-20) p-type nitrogen-doped ZnO-based ZnO by RPE-MOCVD2007

    • Author(s)
      S. Gangil A. Nakamura, M. Shimomura J, Temmyo
    • Journal Title

      Jpn. J. Appl. Phys 46

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Vertically alighed single-crystal ZnO nanotubes grown on γ-LiAIO2(100) substrate by MOCVD2007

    • Author(s)
      G. Zhang M. Adaehi, S. Gangil A. Nakamura J. Temmyo, Y. Matsui
    • Journal Title

      Jpn. J. Appl. Phys 46

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Optical properties of wurtzite Znl-xCdxO films grown bu RPE-MOCVD2007

    • Author(s)
      T. Ohahsi, K. Yamamoto, A.Nakamura, J. Temmyo
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 2516-2518

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nonpolar (11-20) p-type nitrogen-doped ZnO-based ZnO by RPE-MOCVD2007

    • Author(s)
      S. Gangil A. Nakamura, M. Shimomura, J. Temmyo
    • Journal Title

      Jpn. J. Appl. Phys. 46

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Vertically alighed single-crystal ZnO nanotubes grown on γ-LiAlO2(100) substrate by MOCVD2007

    • Author(s)
      G.Zhang, M. Adachi, S. Gangil, A. Nakamura, J. Temmyo, Y.Matsui
    • Journal Title

      Jpn. J. Appl. Phys. 46

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Full-color electroluminescence from ZnO-based heterojinction diodes2007

    • Author(s)
      A.Nakamura, T.Ohashi, Y.Yamamoto, J.Ishihara, T.Aoki, J.Temmyo
    • Journal Title

      Appl. Phys. Lett. 90

      Pages: 93512-93512

    • Related Report
      2006 Annual Research Report
  • [Journal Article] P-type nitrogen-doped ZnO thin films on sapphire (11-20) substrates by PE-MOCVD2007

    • Author(s)
      S.Gangil, A.Nakamura, Y.Ichikawa, K.Yamamoto, J.Ishihara, T.Aoki, J.Temmyo
    • Journal Title

      J. Crystal Growth 298

      Pages: 486-490

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Mg_xZn_<1-x>O films grown by RPE-MOCVD with EtCp2Mg2007

    • Author(s)
      Y.Yamamoto, K.Enomoto, A.Nakamura, T.Aoki, J.Temmyo
    • Journal Title

      J. Crystal Growth 298

      Pages: 468-471

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Au-assisted growth approach for vertically aligned ZnO nanowires on Si substrate2006

    • Author(s)
      G.Zhang, A.Nakamura, T.Aoki, J.Temmyo
    • Journal Title

      Appl. Phys. Lett. 89

      Pages: 113112-113112

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Zn_<1-x>Cd_xO system for visible bandgaps2006

    • Author(s)
      J.Ishihara, A.Nakamura, S.Shigemori, T/.Aoki, J.Temmyo
    • Journal Title

      Appl. Phys. Lett. 89

      Pages: 91914-91914

    • Related Report
      2006 Annual Research Report
  • [Journal Article] 最近の展望 "酸化物半導体ZnO系材料の発光デバイスへの応用"2006

    • Author(s)
      天明二郎
    • Journal Title

      応用物理 75・10

      Pages: 1239-1241

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Characterization of Mg_xZn_<1-x>O films grown by remote-plasma-enhanced metalorganic chemical vapor deposition using bis-thylcyclopentadienienyl magnesium2005

    • Author(s)
      A.Nakamura, K.Yamammoto, J.Ishihara, T.Aoki, J.Temmyo
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 7267-7270

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Growth of Mg_xZn_<1-x>O films using remote plasma MOCVD,2005

    • Author(s)
      A.Nakamura, J.Ishihara, S.Shigemori, T.Aoki, J.Temmyo
    • Journal Title

      Appl.Surf.Sci. 244

      Pages: 385-388

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Growth of Zn_<1-x>Cd_xO films using remote plasma MOCVD2005

    • Author(s)
      J.Ishihara, A.Nakamura, S.Shigemori, T.Aoki, J.Temmyo
    • Journal Title

      Appl.Surf.Sci. 244

      Pages: 381-384

    • Related Report
      2005 Annual Research Report
  • [Presentation] Mg_xZn_<1-x>0混晶の結晶表面形状と電気的特性のMg組成依存2008

    • Author(s)
      坪井貴子 大橋俊哉 山本兼司 S. Gangil、中村篤志 天明二郎
    • Organizer
      2008春応物講演会 30a-V-1
    • Place of Presentation
      船橋
    • Year and Date
      2008-03-30
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] MgxZn1-x0混晶の結晶表面形状と電気的特性のMg組成依存2008

    • Author(s)
      坪井 貴子, 大橋 俊哉, 山本 兼司, S. Gangil, 中村 篤志, 天明 二郎
    • Organizer
      2008春応物講演会30a-V-l
    • Place of Presentation
      船橋
    • Year and Date
      2008-03-30
    • Related Report
      2007 Annual Research Report
  • [Presentation] Fabrication and EL emission of ZnO-based heterojunction light emitting devices2007

    • Author(s)
      S. Guangil, A. Nakamura K. Yamamoto, T. Ohashi, J. Temmyo
    • Organizer
      13th Int. Conf. II-VI Compound, Jeju (Korea) Th2-15.(aural)
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Red emission from ZnO-based double heterojunction diode2007

    • Author(s)
      T. Ohahsi, K. Yamamoto, A. Nakamura, J. Temmyo
    • Organizer
      2007 Int. Conf. SSDM, Tsukuba, E-9-7. (aural)
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Remarks] 「研究成果報告書概要(和文)」より

    • URL

      http://www.rie.shizuoka.ac.jp/~temmyo/index.html

    • Related Report
      2007 Final Research Report Summary
  • [Remarks]

    • URL

      http://www.rie.shizuoka.ac.jp/~temmyo/index.html

    • Related Report
      2007 Annual Research Report
  • [Patent(Industrial Property Rights)] 結晶成長方法及び結晶成長装置2005

    • Inventor(s)
      中村篤志 天明二郎 青木徹
    • Industrial Property Rights Holder
      静岡大学
    • Industrial Property Number
      2005-364018
    • Filing Date
      2005-12-16
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 半導体発光素子の製造方法2005

    • Inventor(s)
      中村, 天明, 青木, 田中
    • Industrial Property Rights Holder
      静岡大学
    • Industrial Property Number
      2005-247902
    • Filing Date
      2005-08-29
    • Related Report
      2005 Annual Research Report

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Published: 2005-04-01   Modified: 2016-04-21  

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