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Analyses of Photo-induced Surface Reaction Processes during Plasma Sputtering

Research Project

Project/Area Number 17340174
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Plasma science
Research InstitutionOsaka University

Principal Investigator

HAMAGUCHI Satoshi  Osaka University, Graduate School of Engineering, Professor, 大学院工学研究科, 教授 (60301826)

Co-Investigator(Kenkyū-buntansha) YOSHIMURA Satoru  Osaka University, Graduate School of Engineering, Associate Professor, 工学研究科, 助教授 (40294029)
KIUCHI Masato  National Institute of Advanced Industrial Science and Technology, Collaborative Research Team for Green Life Technology, Leader, 生活環境技術連携研究体, 研究体長 (50356862)
SAMUKAWA Seiji  Tohoku University, Institute of Fluid Science, Professor, 流体科学研究所, 教授 (30323108)
Project Period (FY) 2005 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥14,500,000 (Direct Cost: ¥14,500,000)
Fiscal Year 2006: ¥4,200,000 (Direct Cost: ¥4,200,000)
Fiscal Year 2005: ¥10,300,000 (Direct Cost: ¥10,300,000)
Keywordsplasma / etching / reactive sputtering / ultraviolet / molecular dynamics simulation / Monte-Carlo simulation / ion beam / 紫外線照射
Research Abstract

The goal of this project is to clarify the role of photon injections (especially those of ultra violet : UV) into the material surface during reactive plasma sputtering. It has been empirically known that, in reactive plasma sputtering (i.e., reactive ion etching) processes, photon injections significantly affect sputtering properties, but detailed mechanisms of the photo-induced non-equilibrium surface chemical reactions have been hardly known. In the present project, we have analyzed surface reaction mechanisms of various etching processes to clarify how photon injections can affect etching properties, using molecular dynamics (MD) simulations and a mass-selected ion beam injection system. Especially in this fiscal year, which is the final year of the present project, we have worked on the following topics : (1) Modeling of interatomic potential functions for excited atoms and interaction of photons and atoms in the material for MD simulations. (2) Examination of synergetic effects of ion beams and photon injections, based on the simultaneous injection experiments of a mono-energetic ion beam obtained from the mass selected ion beam injection system and light from a UV light source attached to the ion beam system. Through such research, we have evaluated effects of UV on reactive ion etching (i.e., plasma sputtering) and clarified various characteristics of surface reactions during reactive ion etching processes for materials widely used in the industry, such as silicon dioxide and some organic polymers.

Report

(3 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • Research Products

    (41 results)

All 2007 2006 Other

All Journal Article (40 results) Book (1 results)

  • [Journal Article] Time evolution of electrode voltage distribution in large-area capacitively coupled plasmas2007

    • Author(s)
      M.Matsukuma, S.Hamaguchi
    • Journal Title

      Thin Solid films (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Molecular dynamics simulation analyses on injection angle dependence of SiO_2 sputtering yields by fluorocarbon beams2007

    • Author(s)
      T.Kawase, S.Hamaguchi
    • Journal Title

      Thin Solid films (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Energy Dependence of Crystalline Structure on Ion Beam Deposited Au Thin Films2007

    • Author(s)
      T.Takizawa, T.Maeda, M.Kiuchi, S.Yoshimura, S.Hamaguchi
    • Journal Title

      Phil. Mag. (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Molecular dynamics simulations of organic polymer dry etching at high substrate temperatures2007

    • Author(s)
      M.Yamashiro, H.Yamada, S.Hamaguchi
    • Journal Title

      Jpn. J. Appl. Phys. (印刷中)

    • NAID

      10018901408

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Atomic-level simulation of non-equilibrium surface chemical reactions under plasma-wall interaction2007

    • Author(s)
      S.Hamaguchi, M.Yamashiro, H.Yamada
    • Journal Title

      Comp. Phys. Comm. (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] 低エネルギー質量分離イオンビーム照射装置を用いたネオンによる金のスパッタ率の測定2007

    • Author(s)
      日根清裕, 吉村智, 木内正人, 浜口智志
    • Journal Title

      真空 (印刷中)

    • NAID

      10019928259

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Temporal evolution of ion fragment production from dimethylsilane by a hot tungsten wire and compounds deposited on the tungsten surface2007

    • Author(s)
      S.Yoshimura, A.Toh, M.Kiuchi, S.Hamaguchi
    • Journal Title

      Jpn. J. Appl. Phys. (印刷中)

    • NAID

      10018901450

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Control of atomic layer degradation on Si substrate2007

    • Author(s)
      Y.Nakamura, T.Tatsumi, S.Kobayashi, K.Kugimiya, T.Harano, A.Ando, T.Kawase, S.Hamaguchi, S.Iseda
    • Journal Title

      J. Vac. Sci. Tech. A (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] ドライエッチング・プロセスシミュレーション2007

    • Author(s)
      浜口智志
    • Journal Title

      真空 (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Time evolution of electrode voltage distribution in large-area capacitively coupled plasmas2007

    • Author(s)
      M.Matsukuma, S.Hamaguchi
    • Journal Title

      Thin Solid films (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Molecular dynamics simulation analyses on injection angle dependence of SiO2 sputtering yields by fluorocarbon beams2007

    • Author(s)
      T.Kawase, S.Hamaguchi
    • Journal Title

      Thin Solid films (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Energy Dependence of Crystalline Structure on Ion Beam Deposited Au Thin Films2007

    • Author(s)
      T.Takizawa, T.Maeda, M.Kiuchi, S.Yoshimura, S.Hamaguchi
    • Journal Title

      Phil.Mag. (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Molecular dynamics simulations of organic polymer dry etching at high substrate temperatures2007

    • Author(s)
      M.Yamashiro, H.Yamada, S.Hamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. (in press)

    • NAID

      10018901408

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Atomic-level simulation of non-equilibrium surface chemical reactions under plasma-wall interaction2007

    • Author(s)
      S.Hamaguchi, M.Yamashiro, H.Yamada
    • Journal Title

      Comp.Phys.Comm. (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Temporal evolution of ion fragment production from dimethylsilane by a hot tungsten wire and compounds deposited on the tungsten surface2007

    • Author(s)
      S.Yoshimura, A.Toh, M.Kiuchi, S.Hamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. (in press)

    • NAID

      10018901450

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Control of atomic layer degradation on Si substrate2007

    • Author(s)
      Y.Nakamura, T.Tatsumi, S.Kobayashi, K.Kugimiya, T.Harano, A.Ando, T.Kawase, S.Hamaguchi, S.Iseda
    • Journal Title

      J.Vac.Sci.Tech.A (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Measurement of Au Sputtering Yields by Neon with Low-Energy Mass Analyzed Ion Beam System2007

    • Author(s)
      K.Hine, S.Yoshimura, M.Kiuchi, S.Hamaguchi
    • Journal Title

      Shinku (in press) (in Japanese)

    • NAID

      10019928259

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Dry Etching Process Simulation2007

    • Author(s)
      S.Hamaguchi
    • Journal Title

      Shinku (in press) (in Japanese)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Textbook for the 13th Plasma Electronics Summer School2007

    • Author(s)
      S.Hamaguchi
    • Journal Title

      Plasma Electronics Division, Japan Society of Applied Physics (in press) (in Japanese)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Control of atomic layer degradation on Si substrate,2007

    • Author(s)
      Y.Nakamura, T.Tatsumi, S.Kobayashi, K.Kugimiya, T.Harano, A.Ando, T.Kawase, S.Hamaguchi, S.Iseda
    • Journal Title

      J. Vac. Sci. Tech. A (印刷中)

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Fragment ions of methylsilane produced by hot tungsten wires2006

    • Author(s)
      S.Yoshimura, A.Toh, T.Maeda, S.Sugimoto, M.Kiuchi, S.Hamaguchi
    • Journal Title

      Jpn. J. Appl. Phys. 45 (3A)

      Pages: 1813-1815

    • NAID

      40007177952

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] 低エネルギー質量分離イオンビーム照射装置を用いた金の堆積率の測定2006

    • Author(s)
      日根清裕, 吉村智, 前田拓也, 木内正人, 浜口智志
    • Journal Title

      真空 49 (3)

      Pages: 55-57

    • NAID

      10018133603

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] フリーマン型イオン源におけるメチルシランのフラグメントイオンとタングステンワイヤ表面状態2006

    • Author(s)
      藤章至, 吉村智, 杉本敏司, 木内正人, 浜口智志
    • Journal Title

      真空 49 (6)

      Pages: 383-385

    • NAID

      10017598622

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Numerical analysis of incident angle effects in reactive sputtering deposition of amorphous SiO_22006

    • Author(s)
      M.Taguchi, S.Hamaguchi
    • Journal Title

      Jpn. J. Appl. Phys. 45(10B)

      Pages: 8163-8167

    • NAID

      10018339149

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires2006

    • Author(s)
      S.Yoshimura, A.Toh, S.Sugimoto, M.Kiuchi, S.Hamaguchi
    • Journal Title

      Jpn. J. Appl. Phys. 45 (10B)

      Pages: 8204-8207

    • NAID

      10018339336

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Temporal evolution of ion fragment production from methylsilane by a hot tungsten wire2006

    • Author(s)
      S.Yoshimura, A.Toh, T.Toyoshima, M.Kiuchi, S.Hamaguchi
    • Journal Title

      J. Appl. Phys. 100 (9)

    • NAID

      120006955415

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Molecular dynamics study on Ar ion bombardment effects in amorphous SiO_2 deposition processes2006

    • Author(s)
      M.Taguchi, S.Hamaguchi
    • Journal Title

      J. Appl. Phys. 100 (12)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Molecular dynamics simulation study on substrate temperature dependence of sputtering yields for an organic polymer underion bombardment2006

    • Author(s)
      M.Yamashiro, H.Yamada, S.Hamaguchi
    • Journal Title

      J. Appl. Phys. 101(4)

    • NAID

      120006955417

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Fragment ions of methylsilane produced by hot tungsten wires2006

    • Author(s)
      S.Yoshimura, A.Toh, T.Maeda, S.Sugimoto, M.Kiuchi, S.Hamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. 45

      Pages: 1813-1815

    • NAID

      40007177952

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary 2005 Annual Research Report
  • [Journal Article] Measurement of Au Deposition Rates with Low-Energy Mass Separated Ion Beam Deposition Apparatus2006

    • Author(s)
      K.Hine, S.Yoshimura, T.Maeda, M.Kiuchi, S.Hamaguchi
    • Journal Title

      Shinku 49(3) (in Japanese)

      Pages: 55-57

    • NAID

      10018133603

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Fragment Ions Produced from Methylsilane by Hot Tungsten and Compounds Deposited on Tungsten Surface2006

    • Author(s)
      A.Toh, S.Yoshimura, S.Sugimoto, M.Kiuchi, S.Hamaguchi
    • Journal Title

      Shinku 49(6) (in Japanese)

      Pages: 383-385

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Numerical analysis of incident angle effects in reactive sputtering deposition of amorphous SiO22006

    • Author(s)
      M.Taguchi, S.Hamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. 45(10B)

      Pages: 8163-8167

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires2006

    • Author(s)
      S.Yoshimura, A.Toh, S.Sugimoto, M.Kiuchi, S.Hamaguchi
    • Journal Title

      Jpn.J.Appl.Phys. 45 (10B)

      Pages: 8204-8207

    • NAID

      10018339336

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Temporal evolution of ion fragment production from methylsilane by a hot tungsten wire2006

    • Author(s)
      S.Yoshimura, A.Toh, T.Toyoshima, M.Kiuchi, S.Hamaguchi
    • Journal Title

      J.Appl.Phys. 100 (9)

    • NAID

      120006955415

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Molecular dynamics study on Ar ion bombardment effects in amorphous SiO2 deposition processes2006

    • Author(s)
      M.Taguchi, S.Hamaguchi
    • Journal Title

      J.Appl.Phys. 100 (12)

    • NAID

      120006955416

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Molecular dynamics simulation study on substrate temperature dependence of sputtering yields for an organic polymer under ion bombardment2006

    • Author(s)
      M.Yamashiro, H.Yamada, S.Hamaguchi
    • Journal Title

      J.Appl.Phys. 101(4)

    • NAID

      120006955417

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Numerical analysis of incident angle effects in reactive sputtering deposition of amorphous SiO_22006

    • Author(s)
      M.Taguchi, S.Hamaguchi
    • Journal Title

      Jpn. J. Appl. Phys. 45 (10B)

      Pages: 8163-8167

    • NAID

      10018339149

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Molecular dynamics study on Ar ion bombardment effects in amorphous SiO_2 deposition processes,2006

    • Author(s)
      M.Taguchi, S.Hamaguchi
    • Journal Title

      J. Appl. Phys. 100 (12)

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Molecular dynamics simulation study on substrate temperature dependence of sputtering yields for an organic polymer under ion bombardment2006

    • Author(s)
      M.Yamashiro, H.Yamada, S.Hamaguchi
    • Journal Title

      J. Appl. Phys. 101 (4)

    • NAID

      120006955417

    • Related Report
      2006 Annual Research Report
  • [Journal Article] 低エネルギー質量分離イオンビーム照射装置を用いた金の堆積率の測定

    • Author(s)
      日根清裕, 吉村智, 前田拓也, 木内正人, 浜口智志
    • Journal Title

      真空 (印刷中)

    • NAID

      10018133603

    • Related Report
      2005 Annual Research Report
  • [Book] 第13回プラズマエレクトロニクス サマースクールテキスト2007

    • Author(s)
      浜口智志
    • Publisher
      応用物理学会プラズマエレクトロニクス分科会(印刷中)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary

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Published: 2005-04-01   Modified: 2016-04-21  

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