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Spatial and Temporal Characterization of Nonradiative recombination centers by Using the Method of Two-Wavelength Excited Photoluminescence

Research Project

Project/Area Number 17360006
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionSaitama University

Principal Investigator

KAMATA Norihiko  Saitama University, School of Science and Engineering, Professor (50211173)

Co-Investigator(Kenkyū-buntansha) HONDA Zentaroh  Saitama University, School of Science and Engineering, Assoc. Prof. (30332563)
ARAKAWA Yasuhiko  University of Tokyo, RCAST, Professor (30134638)
Project Period (FY) 2005 – 2007
Project Status Completed (Fiscal Year 2007)
Budget Amount *help
¥14,050,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2007: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2006: ¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 2005: ¥5,600,000 (Direct Cost: ¥5,600,000)
Keywordsnonradiative recombination center / characterization / photoluminescence / optical properties / quantum wel / 量子閉じ込め
Research Abstract

The method of two-wavelength excited photoluminescence (TWEPL) has been improved as a quantitative one by utilizing the trap-filling effect after Kamata's work at 1995. By introducing an EM-CCD camera with high sensitivity and S/N ratio, and the microscopic optics with magnification change and observation-window mechanisms, we established an improved TWEPL system in order to" trace" the generation of defects and" map" their in-plane distribution in an observing area on a wafer.
Based on the TWEPL system, we detected nonradiative recombination (NRR) centers in InAs/GaAs quantum dot, InGaN/InGaN and GaN/A1GaN quantum well structures. The observation of an irreversible change in the below-gap excitation (BGE) effect in a GaN/AIGaN quantum well was attributed to a surface defect formation due to Nd: YAG laser irradiation as a BGE source. The distribution of NRR centers was exemplified by the segmented measurements of the TWEPL as well as conventional PL.
These spatial and temporal studies are considered to be important steps for analyzing the origin and eliminating scheme of each NRR center, utilizing the merit of non-distractive and non-contacting nature of TWEPL measurement.

Report

(4 results)
  • 2007 Annual Research Report   Final Research Report Summary
  • 2006 Annual Research Report
  • 2005 Annual Research Report
  • Research Products

    (89 results)

All 2008 2007 2006 2005 Other

All Journal Article (30 results) (of which Peer Reviewed: 5 results) Presentation (45 results) Book (6 results) Remarks (4 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence2008

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Journal Title

      Special Issue in Physica Status Solidi (Accepted for publication)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] 顕微光学系によるLED用結晶の2波長励起フォトルミネッセンス評価2008

    • Author(s)
      内山直威、山口朋彦、小川博久、鎌田憲彦
    • Journal Title

      電子情報通信学会電子ディスプレイ研究会 EID2007-70

      Pages: 41-44

    • NAID

      10025648416

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] 深紫外域組成InAlGaNの結晶成長とLEDの作製2008

    • Author(s)
      鎌田憲彦
    • Journal Title

      第2回フロンティアフォトニクスフォーラム No.10

      Pages: 33-35

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Growth of InAlGaN Crystals and Fabrication of Deep-UV LEDs2008

    • Author(s)
      N. Kamata
    • Journal Title

      Proc. 2nd Frontier Photonics Forum

      Pages: 33-35

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Characterization of Crystals for LEDs by Two-Wavelength excited Photoluminescence with Microscopic Optics2008

    • Author(s)
      N. Uchiyama, T. Yamaguchi, H. Ogawa and N. Kamata
    • Journal Title

      Electronic Display Conf. of IEICE, Jpn. E1D2007-70

      Pages: 41-44

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] 顕微光学系によるLED用結晶の2波長励起フォトルミネッセンス評価2008

    • Author(s)
      内山 直威, 山口 朋彦, 小州 博久, 鎌田 憲彦
    • Journal Title

      電子情報通信学会電子ディスプレイ研究会 EID2007-70

      Pages: 41-44

    • NAID

      10025648416

    • Related Report
      2007 Annual Research Report
  • [Journal Article] 深紫外域組成lnAIGaNの結晶成長とLEDの作製2008

    • Author(s)
      鎌田 憲彦
    • Journal Title

      第2回フロンティアフォトニクスフォーラム 10

      Pages: 33-35

    • Related Report
      2007 Annual Research Report
  • [Journal Article] 231-261nm AlGaN Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Multilayer Buffers Grown by Ammonia Pulse-Flow Method on Sapphire2007

    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata
    • Journal Title

      Appl. Phys. Lett. 91

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] TMAIのパルス状供給による極性制御及びAIN/AIGaNテンプレートの高品質化2007

    • Author(s)
      野口憲路, 大橋智昭, 平山秀樹, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 27a-ZM-2

      Pages: 371-371

    • Related Report
      2006 Annual Research Report
  • [Journal Article] AINバッファー高品質化によるAlGaN量子井戸深紫外発光の飛躍的高効率化2007

    • Author(s)
      谷田部透, 大橋智昭, 平山秀樹, 野口憲路, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 27a-ZM-3

      Pages: 372-372

    • Related Report
      2006 Annual Research Report
  • [Journal Article] NH_3交互供給法による紫外LED用高品質AINバッファー層の実現2007

    • Author(s)
      大橋智昭, 平山秀樹, 谷田部透, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 27a-ZM-4

      Pages: 372-372

    • Related Report
      2006 Annual Research Report
  • [Journal Article] 高品質AINバッファー層を用いた深紫外250nmシングルピーク発光LED2007

    • Author(s)
      大橋智昭, 平山秀樹, 谷田部透, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 30p-ZM-8

      Pages: 419-419

    • Related Report
      2006 Annual Research Report
  • [Journal Article] 250-280nm深紫外LEDに向けた高内部量子効率AlGaN量子井戸の実現2007

    • Author(s)
      平山秀樹, 大橋智昭, 谷田部透, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 30p-ZM-9

      Pages: 419-419

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2006

    • Author(s)
      N. Kamata, S. Saravanan, J. M. Zanardi Ocampo, P. O. Vaccaro, Y. Arakawa
    • Journal Title

      Physica B. 376-377

      Pages: 849-852

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2006

    • Author(s)
      Kamata N., Saravanan S., Zanardi Ocampo J. M., Vaccaro P. 0., Arakawa Y.
    • Journal Title

      Physica B 376-377

      Pages: 849-852

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Frontier Photonics by advanced Materials2006

    • Author(s)
      N. Kamata
    • Journal Title

      Project Res. Report of General Res. Institute vol. 4

      Pages: 39-42

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2006

    • Author(s)
      Kamata N., Saravanan S., Zanardi Ocampo J.M., Vaccaro P.O., Arakawa Y.
    • Journal Title

      Physica B 376-377

      Pages: 849-852

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2006

    • Author(s)
      N.Kamata, S.Saravanan, J.M.Zanardi Ocampo, P.O.Vaccaro, Y.Arakawa
    • Journal Title

      Physica B in Press

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2005

    • Author(s)
      N. Kamata, S. Saravanan, J. M. Zanardi Ocampo, P. O. Vaccaro, Y. Arakawa
    • Journal Title

      Proc. 23rd Int. Conf. on Defects in semiconductors (ICDS-23), Awaji ThM2.3C

      Pages: 105-105

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Remarkable Increase of Deep UV Emission from Quaternary InAlGaN by Reducing Oxygen and Carbon Impurities2005

    • Author(s)
      T. Ohashi, H. Hirayama, K. Ishibashi and N. Kamata
    • Journal Title

      Proc. Materials Research Society (MRS) Fall Meeting, Boston FF3.2

      Pages: 784-784

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] InAlGaN4元混晶紫外LEDの高効率化の検討2005

    • Author(s)
      平山秀樹、大橋智昭、石橋幸治、鎌田憲彦
    • Journal Title

      電子情報通信学会技術研究報告「電子デバイス」ED2005-32、CPM2005-24、SDM2005-32 105

      Pages: 91-96

    • NAID

      10016151747

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] 330nm帯紫外発光InAlGaN量子井戸からの高い内部量子効率の観測2005

    • Author(s)
      平山秀樹、高野隆義、大橋智昭、藤川紗千恵、鎌田憲彦、近藤行廣
    • Journal Title

      電子情報通信学会技術研究報告「電子デバイス」 105

      Pages: 67-72

    • NAID

      110003500207

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Improved Efficiency of InAlGaN Quaternary UV-LEDs2005

    • Author(s)
      H. Hirayama, T. Ohashi, K. Ishibashi and N. Kamata
    • Journal Title

      Electronic Device Conf. of IEICE, Jpn. Vol. 105, No. 89

      Pages: 91-96

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Observation of High Internal-Quantum-Efficiency from InAlGaN Quantum Wells Emitting 330nm Wavelength Light2005

    • Author(s)
      H. Hirayama, T. Takano, T. Ohashi, S. Fujikawa, N. Kamata, Y. Kondo,
    • Journal Title

      Electronic Device Conf. of IEICE, Jpn. Vol. 105, No. 326

      Pages: 67-72

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2005

    • Author(s)
      N.Kamata, S.Saravanan, J.M.Zanardi Ocampo, P.O.Vaccaro, Y.Arakawa
    • Journal Title

      Proc.23^<rd> Int.Conf.on Defects in semiconductors (ICDS-23), Awaji ThM2.3C

      Pages: 105-105

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Remarkable Increase of Deep UV Emission from Quaternary InAlGaN by Reducing Oxygen and Carbon Impurities2005

    • Author(s)
      T.Ohashi, H.Hirayama, K.Ishibashi, N.Kamata
    • Journal Title

      Proc.Materials Research Society (MRS) Fall Meeting, Boston

    • Related Report
      2005 Annual Research Report
  • [Journal Article] InAlGaN4元混晶紫外LEDの高効率化の検討2005

    • Author(s)
      平山秀樹, 大橋智昭, 石橋幸治, 鎌田憲彦
    • Journal Title

      電子情報通信学会技術研究報告「電子デバイス」ED2005-32、CPM2005-24、SDM2005-32 105

      Pages: 91-96

    • NAID

      10016151747

    • Related Report
      2005 Annual Research Report
  • [Journal Article] 330nm帯紫外発光InAlGaN量子井戸からの高い内部量子効率の観測2005

    • Author(s)
      平山秀樹, 高野隆義, 大橋智昭, 藤川紗千恵, 鎌田憲彦, 近藤行廣
    • Journal Title

      電子情報通信学会技術研究報告「電子デバイス」 105

      Pages: 67-72

    • NAID

      110003500207

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Journal Title

      Physica Status Solidi (accepted for publication)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence

    • Author(s)
      H.Ogawa, N.Uchiyama, N.Kamata and Y.Arakawa
    • Journal Title

      Special Issue in Physica Status Solidi (Accepted for publication )

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] 248nm ALGaN深紫外LEDの室温CWミリワット出力動作鎌田憲彦、2008

    • Author(s)
      谷田部透、平山秀樹、野月憲路、乗松潤、鎌田憲彦て
    • Organizer
      応用物理学関係連合講演会 30a-B-10
    • Place of Presentation
      日大舟橋
    • Year and Date
      2008-03-30
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 222nm AlGaN深紫外LKDのシングルピーク発光動作2008

    • Author(s)
      野口憲路、平山秀樹、谷田部透、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会 30a-B-11
    • Place of Presentation
      日大舟橋
    • Year and Date
      2008-03-30
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] アンモニアパルス供給多層成長法を用いた深紫外LED用AINバッファーの進展2008

    • Author(s)
      平山秀樹、谷田部透、野口憲路、乗松潤、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会 29p-B-8
    • Place of Presentation
      日大舟橋
    • Year and Date
      2008-03-29
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] K1, 222-273 nm AlGaN Deep Ultraviolet Light-Emitting Diodes Fabricated on High-Quality AlN Buffer on Sapphire2008

    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi, N. Kamata
    • Organizer
      International Symposium on Semiconductor Light Emitting Devices (ISSLED)
    • Place of Presentation
      Invited.
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 227-261 nm AlGaN-Based Deep Ultraviolet Light-Emitting-Diodes Fabricated on High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Yatabe, T. Ohashi and N. Kamata
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-29
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Remarkable-Enhancement of 254-288 nm Deep UV Emission from AlGaN Quantum Wells by Using High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, N. Noguchi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting P29(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-29
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 227-261 nm AlGaN-Based Deep Ultraviolet Light-Emitting-Diodes Fabricated on High-Quality AlN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi and N. Kamata
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting, (Th-O-9)
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-29
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Remarkable-Enhancement of 254-288 nm Deep UV Emission from AlGaN Quantum Wells by Using High-Quality AlN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, N. Noguchi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting, (P29)
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-29
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 227-261 nm AIGaN-Based Deep Ultraviolet Light-Emitting-DiodesFabricated on High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Yatabe, T. Ohashi and N. Kamat
    • Organizer
      Proc.Int.Conf.on White LEDs and Solid State Lighting(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-29
    • Related Report
      2007 Annual Research Report
  • [Presentation] High-Quality AIN Buffer Fabricated on Sapphire by NH3 Pulse-Flow Multi-Layer Growth Method for Application to Deep UV-LEDs2007

    • Author(s)
      N. Noguchi, T. Yatabe, T. Ohashi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting P28(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-28
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] High-Quality AlN Buffer Fabricated on Sapphire by NH3 Pulse-Flow Multi-Layer Growth Method for Application to Deep UV-LEDs2007

    • Author(s)
      N. Noguchi, T. Yatabe, T. Ohashi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting, (P28)
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-28
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] High-Quality AIN Buffer Fabrieated on Sapphire by NH3 Pulse-Flow Multi-Layer Growth Method for Apphication to Deep UV-LEDs,2007

    • Author(s)
      N. Noguchi, T. Yatabe, T, Ohashi N. Kamata and H.Hirayama
    • Organizer
      Proc.Int.Conf.on White LEDs and Solid State Lighting, P28(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-28
    • Related Report
      2007 Annual Research Report
  • [Presentation] Remarkable-Enhancement of 254-288 nm Deo UV Emission from AlGaN Quantum Wells by Using High Quality AIN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, N. Noguchi, N. Kamata and H. Hirayama
    • Organizer
      proc, Int, Conf, in White LEDs and Solid State Lighting, P29(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-28
    • Related Report
      2007 Annual Research Report
  • [Presentation] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence, 2007.10.15(Kyoto2007

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Organizer
      Proc. Int. Symp.on Compound Semicond., MoE P4(査読有)
    • Place of Presentation
      京都
    • Year and Date
      2007-10-15
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence2007

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Organizer
      Proc. Int. Symp. on Compound semiconductors, (MoE P4)
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-10-15
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence,2007.10.15(Klyoto2007

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Organizer
      proc.Int.Symp.on Compound Semicond., MoE P4(査読有)
    • Place of Presentation
      京都
    • Year and Date
      2007-10-15
    • Related Report
      2007 Annual Research Report
  • [Presentation] 245-250 nm AIGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Ohashi, T. Yatabe and N.Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., ThP29(査読有)
    • Place of Presentation
      Las Vegas (USA)
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 245-250nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on High-Quality AlN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Ohashi, T. Yatabe and N. Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., (ThP29)
    • Place of Presentation
      Las Vegas
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 245-250 nm AIGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Ohashi, T. Yatabe and N. Kamata
    • Organizer
      Proc.Int.Conf.on Nitride Semicond., ThP29(査読有)
    • Place of Presentation
      Las Vegas(USA)
    • Year and Date
      2007-09-20
    • Related Report
      2007 Annual Research Report
  • [Presentation] Remarkable Enhancement of 254-280 nm Deep UV Emission from AlGaN Quantum Wells by Using High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, H. Hirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., WP92(査読有)
    • Place of Presentation
      Las Vegas (USA)
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Remarkable-Enhancement of 254-280 nm Deep UV Emission from AlGaN Quantum Wells by Using High-Quality AlN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, N. Noguchi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., (WP92)
    • Place of Presentation
      Las Vegas
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Remarkable Enhancement of 254-280 nm Deep UV Emission from AIGa N Quantum Wbls by Using High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, H. HLirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc.Int.Conf.on Nitride Semicond., WP92(査読有)
    • Place of Presentation
      Las Vegas(USA)
    • Year and Date
      2007-09-19
    • Related Report
      2007 Annual Research Report
  • [Presentation] High-Quality AIN Buffer Fabricated on Sapphire by NH3 Pulse Flow Multi-Layer Growth Method for Application to Deep UTV-LEDs2007

    • Author(s)
      H. Hirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., M2(査読有)
    • Place of Presentation
      Las Vegas (USA)
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] High-Quality AlN Buffer Fabricated on Sapphire by NH3 Pulse Flow Multi-Layer Growth Method for Application to Deep UV-LEDs2007

    • Author(s)
      H. Hirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., (M2)
    • Place of Presentation
      Las Vegas
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] High-Quality AIN Buffer Fabricated on Sapphire by NH3 Pulse Flow Multi-Layer Growth Method for Application to Deep UV-LEDs2007

    • Author(s)
      H. Hirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc.Int.Cokf.on Nitride Semicond., M2(査読有)
    • Place of Presentation
      Las Vegas(USA)
    • Year and Date
      2007-09-18
    • Related Report
      2007 Annual Research Report
  • [Presentation] Control of Polarity and Reduction of Threading Dislocations density (TDD) of AlN/AlGaN Buffer on Sapphire by Using TMA1 Pulse Supply Method2007

    • Author(s)
      N. Noguchi, T. Ohashi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., MP75(査読有)
    • Place of Presentation
      Las Vegas (USA)
    • Year and Date
      2007-09-17
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Control of Polarity and Reduction of Threading Dislocations density (TDD) of AlN/AlGaN Buffer on Sapphire by Using TMAl Pulse Supply Method2007

    • Author(s)
      N. Noguchi, T. Ohashi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., (MP75)
    • Place of Presentation
      Las Vegas
    • Year and Date
      2007-09-17
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Control of Polarity and Reduction of Threading Disslocations density (TDD) of AIN/AIGaN Buffer on Sapphire by Using TMAI Pulse Supply Method2007

    • Author(s)
      N. Noguchi, T. Ohashi, N. Kamata and H.Hirayama
    • Organizer
      Proc.Int.Conf.on Nitride Semicond., MP75(査読有)
    • Place of Presentation
      Las Vegas(USA)
    • Year and Date
      2007-09-17
    • Related Report
      2007 Annual Research Report
  • [Presentation] 261nm AlGaN量子井戸深紫外LEDのCWミリワット動作、2007

    • Author(s)
      谷田部透、野口憲路、鎌田憲彦、平山秀樹
    • Organizer
      応用物理学会学術講演会 8p-ZR-7
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-08
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 231nm AlGaN量子井戸深紫外LEDのシングルピーク発光動作、2007

    • Author(s)
      野口憲路、谷田部透、鎌田簿彦、平山秀樹
    • Organizer
      応用物理学会学術講演会 8p-ZR-8
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-08
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 261nm AlGaN量子井戸深紫外LEDのCWミリワット動作、2007

    • Author(s)
      谷田 部透, 野口 憲路, 鎌田 憲彦, 平由 秀樹
    • Organizer
      応用物理学会学術誰演会8p-ZR-7
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-08
    • Related Report
      2007 Annual Research Report
  • [Presentation] 231nm AlGaN量子井戸深紫外LEDのシングルピーク発光動作、2007

    • Author(s)
      野口 憲路, 谷田 部透, 鎌田 憲彦, 平山 秀樹
    • Organizer
      応用物理学会学術講演会8p-ZR-8
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-08
    • Related Report
      2007 Annual Research Report
  • [Presentation] 230-350nm窒化物深紫外LEDの進展と今後の展望2007

    • Author(s)
      平山秀樹、谷田部透、野口憲路、藤川紗千恵、高野隆好、鎌田憲彦、近藤行廣
    • Organizer
      応用物理学会学術講演会 「窒化物光半導体のフロンティア」シンポジウム(招待) 5p-ZR-8
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-05
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 230-350nm窒化物深紫外LEDの進展と今後の展望2007

    • Author(s)
      平山 秀樹, 谷田 部透, 野口 憲路, 藤州 紗千恵, 高野 隆好, 鎌田 憲彦, 近藤 行廣
    • Organizer
      応用物理学会学術講演会「窒化物光半導体のフロンティア」シンポジウム(招待)5p-ZR-8
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-05
    • Related Report
      2007 Annual Research Report
  • [Presentation] 高品質AlNバッファー層を用いた深紫外250nmシングルピーク発光LED2007

    • Author(s)
      大橋智昭、平山秀樹、谷田部透、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-30
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 250-280nm深紫外LEDに向けた高内部量子効率AlGaN量子井戸の実現2007

    • Author(s)
      平山秀樹、大橋智昭、谷田部透、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-30
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] 248nm AlGaN深紫外LEDの室温CWミリワット出力動作鎌田憲彦、2007

    • Author(s)
      谷田 部透, 平山 秀樹, 野口 憲路, 乗松 澗, 鎌田 憲彦
    • Organizer
      応用物理学関係連合講演会30a-B-10
    • Place of Presentation
      日大舟橋
    • Year and Date
      2007-03-30
    • Related Report
      2007 Annual Research Report
  • [Presentation] 222nm AlGaN深紫外LEDのシングルピーク発光動作2007

    • Author(s)
      野口 憲路, 平由 秀樹, 谷田 部透, 鎌田 憲彦
    • Organizer
      応用物理学関係連合講演会30a-B-11
    • Place of Presentation
      日大舟橋
    • Year and Date
      2007-03-30
    • Related Report
      2007 Annual Research Report
  • [Presentation] アンモニアパルス供給多層成長法を用いた深紫外LED用ALNバッファーの進展2007

    • Author(s)
      平山 秀樹, 谷田 部透, 野口 憲路, 乗松 澗, 鎌田 憲彦
    • Organizer
      応用物理学関係連合講演会29p-B-8
    • Place of Presentation
      日大舟橋
    • Year and Date
      2007-03-29
    • Related Report
      2007 Annual Research Report
  • [Presentation] TMA1のパルス状供給による極性制御及びAlN/AlGaNテンプレートの高品質化2007

    • Author(s)
      野口憲路、大橋智昭、平山秀樹、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-27
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] AlNバッファー高品質化によるAlGaN量子井戸深紫外発光の飛躍的高効率化2007

    • Author(s)
      谷田部透、大橋智昭、平山秀樹、野口憲路、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-27
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] NH_3交互供給法による紫外LED用高品質AlNバッファー層の実現2007

    • Author(s)
      大橋智昭、平山秀樹、谷田部透、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-27
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Development and Perspective of 230-350nm Nitride Deep-UV LEDs2007

    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi, S. Fujikawa, T. Takano, N. Kamata and Y. Kondo
    • Organizer
      Conf. of Jpn. Soc. Applied Physics, Symp. on "Frontier of Nitride Semiconductors" , (5p-ZR-8)
    • Place of Presentation
      Invited, in Japanese
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2005

    • Author(s)
      N. Kamata, S. Saravanan, J. M. Zanardi Ocampo, P. 0. Vaccaro, Y. Arakawa
    • Organizer
      23rd Int. Conf. on Defects in Semiconductors (ICDS-23)
    • Place of Presentation
      Awaj ThM2. 3C
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Remarkable Increase of Deep UV Emission from Quaternary InAlGaN by Reducing Oxygen and Carbon Impurities2005

    • Author(s)
      T. Ohashi, H. Hirayama, K. Ishibashi and N. Kamata
    • Organizer
      Materials Research Society (MRS) Fall Meeting 2005, (FF3. 2)
    • Place of Presentation
      Boston, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Book] 電気データブック(電子材料り稿:鎌田分担編集)2008

    • Author(s)
      電気学会編集委員会
    • Publisher
      朝倉書店(出版確定)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Book] Photonics(鎌田分担訳)2008

    • Author(s)
      A. Yariv, P. Yeh(多田、神谷監訳)
    • Publisher
      丸善(改訳版刊行作業中)(出版確定)
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Book] 電気データブック2007

    • Author(s)
      電気学会編集委員会
    • Publisher
      朝倉書店(印刷中)
    • Related Report
      2006 Annual Research Report
  • [Book] Photonics(鎌田分担訳)2007

    • Author(s)
      A.Yariv, P.Yeh, (多田, 神谷監訳)
    • Publisher
      丸善(改訳版刊行作業中)(印刷中)
    • Related Report
      2006 Annual Research Report
  • [Book] 電子材料ハンドブック (木村忠正他編著)2006

    • Author(s)
      鎌田憲彦(「半導体材料」主査)
    • Publisher
      朝倉書店
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Book] 電子材料ハンドブック(木村忠正他編著)2006

    • Author(s)
      鎌田 憲彦(「半導体材料」主査)
    • Publisher
      朝倉書店(最終校正中)
    • Related Report
      2005 Annual Research Report
  • [Remarks] 「研究成果報告書概要(和文)」より

    • URL

      http://www.saitama-u.ac.jp/iron/

    • Related Report
      2007 Final Research Report Summary
  • [Remarks] 「研究成果報告書概要(和文)」より

    • URL

      http://www.fms.saitama-u.ac.jp/~kamata_l/index.html

    • Related Report
      2007 Final Research Report Summary
  • [Remarks]

    • URL

      http://www.saitama-u.ac.jp/iron/

    • Related Report
      2007 Annual Research Report
  • [Remarks]

    • URL

      http://www.fms.saitama-u.ac.jp/lab/kamata_l/

    • Related Report
      2007 Annual Research Report
  • [Patent(Industrial Property Rights)] 光半導体素子およびその製造方法2007

    • Inventor(s)
      平山秀樹、大橋智昭、鎌田憲彦
    • Industrial Property Rights Holder
      理研、埼玉大学
    • Industrial Property Number
      2007-219890
    • Filing Date
      2007-08-27
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 光半導体素子およびその製造方法2007

    • Inventor(s)
      平山秀樹、大橋智昭、鎌田憲彦
    • Industrial Property Rights Holder
      理研、埼玉大学
    • Industrial Property Number
      2007-219910
    • Filing Date
      2007-08-27
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 光半導体素子およびその製造方法2007

    • Inventor(s)
      平山 秀樹, 大橋 智昭, 鎌田 憲彦
    • Industrial Property Rights Holder
      理研、埼玉大学
    • Filing Date
      2007-08-27
    • Related Report
      2007 Annual Research Report
  • [Patent(Industrial Property Rights)] 光半導体素のおよびその製造方法2007

    • Inventor(s)
      平山 秀樹, 大橋 智昭, 鎌田 憲彦
    • Industrial Property Rights Holder
      理研、埼玉大学
    • Filing Date
      2007-08-27
    • Related Report
      2007 Annual Research Report

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Published: 2005-04-01   Modified: 2016-04-21  

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