Study on terahertz-radiation device using wide-gap oxide thin films
| Project/Area Number |
17360029
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
ICHIKAWA Yo Nagoya Institute of Technology, Graduate School, Professor (10314072)
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| Co-Investigator(Kenkyū-buntansha) |
ICHIMURA Masaya Nagoya Institute of Technology, Graduate School, Professor (30203110)
SARUKURA Nobuhiko Osaka University, Institute of Laser Engineering, Professor (40260202)
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| Project Period (FY) |
2005 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥11,590,000 (Direct Cost: ¥10,900,000、Indirect Cost: ¥690,000)
Fiscal Year 2007: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2006: ¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 2005: ¥4,600,000 (Direct Cost: ¥4,600,000)
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| Keywords | terahertz radiation / wide gap oxide / ZnO / thin films |
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| Research Abstract |
1.Demonstration of terahertz emission device using ZnO thin films ; Terahertz(THz)-emission devices were fabricated using ZnO thin films with optical wide-gap. Aluminum-gap electrodes for photoconductive antenna were formed on ZnO film surface. THz-radiation experiments were carried out by the irradiation of 290nm-femtosecond laser pulses(210fs) on the biased gap electrodes. THz radiation was observed from a well-orientated ZnO thin film grown on sapphire substrates. The spectrum of the THz radiation is obtained by using a polarizing-Michelson-interferometer. The spectrum extends up to 1.0THz and the peak position is located at around 0.3THz. The THz-radiation could be increased by a changing of the electrode material from aluminum to nickel, and by an over-coating the device surface using ZnO film. However, resistivity of ZnO film was lowered by an increasing of the film thickness. In order to avoid a lowering of the film-resistivity, a doping effect of another element was investigated. By a doping of copper into the films, it was observed that the resistivity could be successfully increased.
2.Processing of optical materials and devices for terahertz region ; Optical materials with submillimeter-size are necessary for terahertz-use. ZnO films were prepared by metal organic decomposition(MOD) method. Thick films with fine optical properties could be successfully obtained by the MOD method. Optical properties of PDMS(polydimethylsiloxane) were investigated. It was appeared that PDMS is transparent for ultraviolet-visible region and terahertz region. By dispersing nano-particles of ZnO in PDMS, an optical transparency in terahertz region could be controlled. These materials can be prepared by wet processing with availability for substrates with large and for thick films. Therefore, these materials and the wet processing have bright prospects for the constructions of optical materials and devices using in terahertz region.
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Report
(4 results)
Research Products
(11 results)
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[Journal Article] Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses2005
Author(s)
S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, T. Fukuda
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Journal Title
Applied. Physics. Letters 87
Pages: 261112-261114
Description
「研究成果報告書概要(欧文)」より
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