| Project/Area Number |
17360139
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyoto University |
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Principal Investigator |
KIMURA Kenji Kyoto University, Graduate School of Engineering, Professor (50127073)
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| Co-Investigator(Kenkyū-buntansha) |
SUZUKI Motofumi Kyoto Univ., Graduate School of Engineering, Associate professor (00346040)
NAKAJIMA Kaoru Kyoto Univ., Graduate School of Engineering, Associate professor (80293885)
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| Project Period (FY) |
2005 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥16,140,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥840,000)
Fiscal Year 2007: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2006: ¥5,800,000 (Direct Cost: ¥5,800,000)
Fiscal Year 2005: ¥6,700,000 (Direct Cost: ¥6,700,000)
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| Keywords | strain-Si / high-resolution RBS / ion implantation / Ge growth / oxidation of Si / ひずみ測定 |
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| Research Abstract |
New goniometers and load lock chambers were developed for the present high-resolution Rutherford backscattering spectroscopy (HRBS) system. By performing the channeling angular scan with the improved HRBS system and comparing the result with a trajectory simulation of channeling ions, the strain in the strain-Si grown on a SiGe layer was measured for both ion-implanted strain-Si samples and strain-Si samples annealed after ion implantation. It was found that the strain was recovered after annealing.
Germanium was epitaxially grown on a clean (001) surface of strain-Si and the growth process was observed in situ with HRBS. For comparison a similar measurement was done with normal Si It was hind that the interdiffusion between Ge and strain-Si is enhanced as compared with the normal Si The effect of strain on the initial oxidation process of Si(001) was also studied by in-situ HRBS observation. The saturation oxygen coverage on the strain-Si was hind to be the same as the normal Si at room temperature (RT) as well as at 640℃. More detailed observation at RT revealed that there is no difference at the oxygen exposure of 12 L but oxygen coverage for the strain-Si is larger at 30 L. This result together with the first principles calculation suggests that the effect of the strain on the oxidation depends on the adsorption site for oxygen.
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