| Project/Area Number |
17360153
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Gunma University |
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Principal Investigator |
HANAIZUMI Osamu Gunma University, Graduate School of Engineering, Professor (80183911)
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| Co-Investigator(Kenkyū-buntansha) |
MOTOJIMA Kuniyuki Gunma University, Graduate School of Engineering, Associate Professor (30272256)
MIURA Kenta Gunma University, Graduate School of Engineering, Assistant Professor (40396651)
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| Project Period (FY) |
2005 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥14,640,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2007: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2006: ¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 2005: ¥7,200,000 (Direct Cost: ¥7,200,000)
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| Keywords | silicon nanocrystal / photonic crystal / light emission / sputtering / ion implantation / annealing / optical device / 光増幅 / エルビウム / SiO_2 / 赤色発光 / 超格子 / 紫外発光 |
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| Research Abstract |
We deposited Si/SiO_2 multilayers having nanometer-order-thick Si and SiO_2 layers using radio-frequency sputtering and obtained ultraviolet (UV) -light emission from the samples after high-temperature annealing. In particular, we found a sharp UV peak around a wavelength of 370 nm after annealing at 1200 ℃. The UV-light emission seems to originate from Si layers, which may be transformed into Si nanocrystals (Si-nc's), and interface layers between Si-nc's and SiO_2 layers. Fused-silica substrates that emit blue light were also fabricated by using Si-ion implantation and high-temperature annealing. Their blue-photoluminescence peaks were located at around a wavelength of 400 nm. We found that the peak intensity can be over four times greater than that of the longer wavelength peak after annealing at 1200 ℃. The blue-light emission seems to originate from both Si-nc's and interface layers between Si-nc's and SiO_2 media produced in fused-silica substrates. We are trying to optimize the
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conditions of Si-ion implantation and annealing to improve the emission intensity and evaluate optical gains of the samples. UV- or blue-light emitting materials can be useful for light sources of higher-density optical-disk systems. If we realize this kind of light source utilizing Si-based materials, we will obtain many benefits, such as matching for LSI's, lower cost, and suitability for environment application.
We fabricated an Si: SiO_2 two-dimensional photonic crystal that emits light at wavelengths from red to infrared by using radio-frequency sputtering, double-interference exposure, and plasma etching. An enhanced photoluminescence spectrum was observed from the sample. We found that the photoluminescence peaks were located at around a wavelength of 800 nm and that the peak intensity can be increased 1.5 times by introducing a periodic structure. Such Si: SiO_2 films with periodic structures can also be useful as substrates of autocloned photonic crystals. We will be able to realize Si-based light-emitting devices utilizing our technologies. Less
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