Integrated magnetic sensor using spin tunneling effect
| Project/Area Number |
17360159
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya University |
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Principal Investigator |
IWATA Satoshi Nagoya University, Graduate School of Engineering, Professor (60151742)
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| Co-Investigator(Kenkyū-buntansha) |
TSUNASHIMA Shigeru Nagoya University, Graduate School of Engineering, Professor (80023323)
UCHIYAMA Tsuyoshi Nagoya University, Graduate School of Engineering, Associate Professor (00203555)
KATO Takeshi Nagoya University, Graduate School of Engineering, Associate Professor (50303665)
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| Project Period (FY) |
2005 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥15,780,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥780,000)
Fiscal Year 2007: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2006: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2005: ¥8,700,000 (Direct Cost: ¥8,700,000)
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| Keywords | magnetic sensor / giant magnetoresistance / spin tunneling effect / sensor array / MEMS / spin-electronics |
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| Research Abstract |
Magnetic sensor devices using a giant magnetoresistance effect and a spin tunneling effect were developed and their sensing characteristics were investigated. In order to prepare sensor devices, Co/Cu multilayers and Ta/CoFeB/Cu/CoFe/MnR/Al spin valve films were patterned to strip lines by means of photolithography, which had a shape of 30μm width and 200μm length. Spin tunneling devices with 10×10μm^2〜30×30μm^2 junction, whose structure was Ta/CoFe/MnIr/CoFeB/Al_2O_3/CoFeB/Ta made by 8 sources magnetron sputtering system, were prepared by photolithography. Electronic sensor circuits with a frequency sift type and a voltage shift type, were developed for utilizing prepared magnetic sensor devices. The sensor devices were mount in center of Helmholtz coils, which generate a alternative magnetic field of 1 kHz and out put signal from the sensor circuit was observed by a synchroscope. When the external magnetic field of 1 kHz was applied in perpendicular to easy axis of the free layer of the spin valve, an out put voltage of 70 mV was obtained for 10 Oe external field and a sensitivity of 0.2 Oe was achieved. When the external field was applied in parallel to the easy axis, a larger change of out put voltage was observed compared to perpendicular case.
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Report
(4 results)
Research Products
(55 results)
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[Presentation] TMR素子を用いた磁界センサ2007
Author(s)
山田哲也, 中島将太, 加藤剛志, 岩田聡, 綱島滋
Organizer
平成19年度電気関係学会東海支部連合大会
Place of Presentation
信州大学
Year and Date
2007-09-27
Description
「研究成果報告書概要(和文)」より
Related Report
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[Presentation] Magnetic sensor, using TMR device2007
Author(s)
T. Yamada, S. Nakashima, T. Kato, S. Iwata, S. Tsunashima
Organizer
2007 Joint Conference on Electrical Engineering in Tokai Branch
Place of Presentation
Shinshu University
Year and Date
2007-09-27
Description
「研究成果報告書概要(欧文)」より
Related Report
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