Study on the Optimal Design of Molecular Transistors in Next Generation Based on a Quantum Mechanical Simulation

• Project/Area Number: 17360163
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kobe University
• Principal Investigator: OGAWA Matsuto Kobe University, 大学院工学研究科, 教授 (40177142)
• Co-Investigator(Kenkyū-buntansha): SOUMA Satofumi 神戸大学, 大学院工学研究科, 准教授 (20432560)
• Project Period (FY): 2005 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥4,380,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥480,000); Fiscal Year 2008: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2007: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2006: ¥1,000,000 (Direct Cost: ¥1,000,000); Fiscal Year 2005: ¥1,300,000 (Direct Cost: ¥1,300,000)
• Keywords: 分子デバイス / デバイス物理 / 素子設計 / 非平衡グリーン関数法 / 第一原理バンド構造計算 / ナノバイオ / 先端機能デバイス / 第一原理計算 / 非平衡グリーン関数 / ナノ材料 / 電子デバイス・機器 / マイクロナノデバイス / ポリチオフェン(PDT) / 機能性ナノ分子の設計 / 第一原理分子動力学法

Research Abstract

スケーリングリミットに近づいたシリコン系デバイスの次世代の代替候補として分子エレクトロニクス材料に焦点を当て,ナノ材料設計及びデバイス設計に関して第一原理電子状態解析とNEGF法に基づき主としてGNR(グラーフェンナノリボン=Carbon系)およびPDT(ポリドデシルチオフェン)系の分子構造に伴う電子状態解析結果とデバイス構造設計によるデバイス特性解析結果,及び解析手法を開発し,PDT系材料のスイッチとしての分子デバイスへの応用が可能となることを明らかにした.シリコン系材料の置換の可能性が開け,次世代ナノ材料・デバイス設計も可能となり,産業技術への展開が可能となると考えられる.

Research Products

• [Journal Article] Full-band simulation of nano-scale MOSFETs based on a non-equili-rium Green's function method (2008)
  • Author(s): H. Fitriawan, M. Ogawa
  • Journal Title: IEICE Transactions on Electronics E91-C Pages: 105-109
  • Peer Reviewed
• [Journal Article] Numerical simulation of electronic transport in zigzag-edged graphenenano-ribbon devices (2008)
  • Author(s): S. Souma, M. Ogawa, T. Yamamoto, K. Watanabe
  • Journal Title: J. Comp. Electron. 7 Pages: 390-393
  • Peer Reviewed
• [Journal Article] Non-equilibrium Green's function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structure (2008)
  • Author(s): H. Fitriawan, M. Ogawa S. Souma, T. Miyoshi
  • Journal Title: J. Mat. Sci. : Materials in Electronics Pages: 107-110
  • Peer Reviewed
• [Journal Article] Fullband simulation of nano-scale MOSFETs based on anon-equilibrium Green's function method (2008)
  • Author(s): H. Fitriawan, M. Ogawa
  • Journal Title: IEICE Transactions on Electronics E91-C Pages: 105-109
  • Peer Reviewed
• [Journal Article] Non-equilibrium Green's function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structure (2008)
  • Author(s): H. Fitriawan, M. Ogawa
  • Journal Title: J. Mat. Sci.: Materials in Electronics 19 Pages: 107-110
  • Peer Reviewed
• [Journal Article] Quantum electron transport modeling in double-gated MOS FETs based on multiband non-equilibrium Green's function method (2007)
  • Author(s): H. Fitriawan, M. Ogawa
  • Journal Title: Physica E 42 Pages: 245-248
  • Peer Reviewed
• [Journal Article] Investigation of Electronic Transport in Carbon Nanotubes Using Green's-Function Method (2006)
  • Author(s): T.Umegaki, M.Ogawa, T.Miyoshi
  • Journal Title: J. Appl. Phys. 99・4
• [Journal Article] Atomistic Quantum Simulation of Nano-Scale Devices Based on Non-Equilibrium Green's Function (2006)
  • Author(s): H.Fitriawan, M.Ogawa, T.Miyoshi
  • Journal Title: Proceedings of the 2006 International Meeting for Future of Electron Devices Pages: 23-24
• [Journal Article] Non-Equilibrium Green's Function Method for Modelling Quantum Electron Transport in Nano-Scale Devices with Anisotropic Multiband Structure (2006)
  • Author(s): H.Fitriawan, M.Ogawa, T.Miyoshi
  • Journal Title: Proc. 6^<th> International Conference on Materials for Microelectronics and Nanoengineering Pages: 32-34
• [Journal Article] Investigation of Electronic Transport in Carbon Nanotubes Using Green's Function Method (2006)
  • Author(s): T.Umegaki, M.Ogawa, T.Miyoshi
  • Journal Title: J.Appl.Phys. 99・2
• [Journal Article] Analysis of Band-Pass Filter Characteristics in a Ferrite Device with Carbon Nanotube Electrodes (2005)
  • Author(s): T.Umegaki, M.Ogawa, T.Miyoshi
  • Journal Title: ACES Journal 20・3 Pages: 221-230
• [Presentation] Analysis of direct tunneling current from quasi-bound states in n-MOSFET based on non-equilibrium Green's function (2008)
  • Author(s): S. Muraoka, S. Souma, andM. Ogawa
  • Organizer: 2008 Int. Conf. Simulation of Semicon. Process and Devices
  • Place of Presentation: 神奈川県箱根町
  • Year and Date: 2008-09-10
• [Presentation] Numerical simulation of the electronic transport in graphene nano-ribbon devices (2007)
  • Author(s): S. Souma, M. Ogawa
  • Organizer: 12th Int. Workshop on Computational Electronics
  • Place of Presentation: USA
• [Book] ナノエレクトロニクスの基礎 (2007)
  • Author(s): 三好旦六, 小川 真人, 土屋 英昭
  • Total Pages: 261
  • Publisher: 培風館
• [Book] 電子材料ハンドブック (2006)
  • Author(s): 小川真人(木村忠正, 八尾隆文, 奥村次徳, 豊田太郎編応用物理学会編)
  • Total Pages: 20
  • Publisher: 朝倉書店
• [Remarks]
  • URL: http://www2.kobe-u.ac.jp/~lerl2/researchl.htm
• [Remarks]
  • URL: http://www2.kobe-u.ac.jp/~lerl2