| Project/Area Number |
17360324
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Shizuoka University |
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Principal Investigator |
FUJIMOTO Masayuki Shizuoka University, Innovative Joint Research Center, Professor (60372520)
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| Co-Investigator(Kenkyū-buntansha) |
OHNO Tomoya Kitami Institute of Technology, Material Science, Assistant (90397365)
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| Project Period (FY) |
2005 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥14,980,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥780,000)
Fiscal Year 2007: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2006: ¥5,300,000 (Direct Cost: ¥5,300,000)
Fiscal Year 2005: ¥6,300,000 (Direct Cost: ¥6,300,000)
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| Keywords | Perovskite / Nanostructure / Resistive Switching / Mott Transition / 酸化物薄膜 / 電子輸送特性 / 高速抵抗変化 / TEM / EELS |
|---|
| Research Abstract |
Electron-transport mechanisms of oxide ceramics exhibiting high-speed voltage-pulse-induced resistivity changes were characterized with regard to nanostructure and defect formation. La-doped SrTiO_3 single crystals with Ag top electrodes and Pt bottom electrodes exhibited bipolar resistive switching but retained the low-resistivity state for only 3 or 4 hours because of unstable deep-level trap states at the metal-semiconductor interface. Crystalline (Pr^(0.7)Ca^(0.3)) MnO_3 thin films sandwiched by Pt electrodes showed metallic conductivity and consequently never showed electric-pulse-induced resistivity changes, but insulative amorphous (Pr^(0.7) Ca^(0.3)) MnO_3 thin films showed monopolar resistivity switching that suggested the formation of nanoscale filament paths with nanodomain switches. The TiO_2 anatase nanolayer formed on a TiN thin film exhibited high-speed electric-pulse-induced bipolar resistivity changes thought to be due to a Mott transition caused by O^(2-) migration and the formation and annihilation of Vo-in 2.5-nm-thick anatase layer.
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