| Project/Area Number |
17510107
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Muroran Institute of Technology |
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Principal Investigator |
FUKUDA Hisashi Muroran Institute of Technology, Faculty of Engineering, Professor (10261380)
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| Co-Investigator(Kenkyū-buntansha) |
TAKEDA Keiki Hokkaido University of Education, Faculty of Engineering, Assistant (70352060)
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| Project Period (FY) |
2005 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥3,150,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥150,000)
Fiscal Year 2007: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2006: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2005: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Keywords | Crystal Growth / Quantum Dots / Nanodevices / Focused Ion Beam |
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| Research Abstract |
Organic Thin Film Transistor (OTFT) memories with a nanocrystal carbon (nc-C) dots arranged in channel region were fabricated using a focused ion beam (FIB) system with a precursor of low energy Ga^+ ion and carbon source. The crystallinity of nc-C dots was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600℃ by the sharp peak at 1565 cm^<-1> in graphite (sp^2), while no peak of diamond (sp^3) could be seen at 1333 cm^<-1>. The AFM images showed the nc-C dots controlled with diameter of 100 nm. The above results revealed that the nc-C dots had sufficiently stick onto SiO_2 films. The hysterisis loop in the threshold voltage characteristics appeared in the device in which voltage shift is 0.32 V after charge injection into the nc-C dots.. In next stage, we will analyze the erase step and retention characteristics.
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