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Chemical Vapor Deposition Processes to Prepare Silicon Nitride Films from Organic Silicon Materials Containing Nitrogen

Research Project

Project/Area Number 17550009
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Physical chemistry
Research InstitutionShizuoka University (2006)
Japan Advanced Institute of Science and Technology (2005)

Principal Investigator

UMEMOTO Hironobu  Shizuoka University, Faculty of Engineering, Professor, 工学部, 教授 (80167288)

Project Period (FY) 2005 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2006: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2005: ¥2,600,000 (Direct Cost: ¥2,600,000)
KeywordsChemical Vapor Deposition / Silicon Nitride / Organic Silicon / Mass Spectrometry / Remote Chemical Vapor Deposition / Transportation of Radicals / Silica Coating / Polysilazane / 炭窒化シリコン薄膜 / 活性窒素 / 質量分析
Research Abstract

Silicon nitride and silicon carbon nitride films have attractive properties, such as wear resistance, chemical inertness, transparency, and insulatability. Device quality silicon nitride films can be fabricated from SiH_4 and NH_3 by using a catalytic chemical vapor deposition (Cat-CVD) technique. It is possible to coat organic materials, such as organic light-emitting diodes and plastic films for packaging. The problem is that SiH_4 is highly explosive and alternative materials are expected. Hexamethyldisilazane (HMDS) is one of the attractive materials to replace SiH_4. In the present study, the Cat-CVD processes of HMDS and trisdimethylaminosilane were focused.
Gas-phase diagnoses were performed by employing three kinds of mass spectrometric techniques: electron impact quadrupole mass spectrometry, vacuum-ultraviolet photoionization time-of-flight mass spectrometry, and ion attachment quadrupole mass spectrometry. Combining the results of these mass spectrometric measurements, it was … More revealed that Si-N bonds are broken selectively although they are stronger than Si-C bonds. The lone-paired electrons of N atoms may interact with the catalyzer to break the bonds selectively. A steric hindrance must be present to break Si-C bonds. It was also found that the decomposition efficiency of NH_3 decreases drastically by the addition of HMDS. This suggests that HMDS poisons the catalyzer surfaces and blocks the decomposition of NH_3. One of the techniques to overcome this poisoning problem is remote Cat-CVD in which NH_3 or H_2 is decomposed on catalyzer surfaces and the produced radicals are transported to down streams where organic silicon compounds are introduced. In order to explore the possibility of this remote Cat-CVD technique, the stainless-steel chamber walls were coated with SiO_2 or Teflon. An increase in H-atom density by one order of magnitude was observed when such coatings were made, showing that remote Cat-CVD of organic silicon compounds can be a promising technique to prepare thin solid films. Less

Report

(3 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • Research Products

    (42 results)

All 2007 2006 2005 Other

All Journal Article (42 results)

  • [Journal Article] Catalytic CVD Processes of Oxidizing Species and the Prevention of Oxidization of Heated Tungsten Filaments by H_22007

    • Author(s)
      H.Umemoto et al.
    • Journal Title

      Thin Solid Films (In press)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Future Prospect of Remote Cat-CVD on the basis of gas-phase diagnoses2007

    • Author(s)
      H.Umemoto et al.
    • Journal Title

      Thin Solid Films (In press)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Cat-CVD SiN Passivation Films for OLEDs and Packaging2007

    • Author(s)
      A.Heya et al.
    • Journal Title

      Thin Solid Films (In press)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Catalytic CVD Processes of Oxidizing Species and the Prevention of Oxidization of Heated Tungsten Filaments by H22007

    • Author(s)
      H.Umemoto et al.
    • Journal Title

      Thin Solid Films (in press.)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Future Prospect of Remote Cat-CVD on the basis of gas-phase diagnoses2007

    • Author(s)
      H.Umemoto et al.
    • Journal Title

      Thin Solid Films (in press.)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] H_2 Dilution Effect in the Cat-CVD Processes of the SiH_4/NH_3 System2006

    • Author(s)
      S.G.Ansari et al.
    • Journal Title

      Thin Solid Films 501, [1-2]

      Pages: 31-34

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Mass-Spectrometric Studies of Cat-CVD Processes of Organic Silicon Compounds Containing Nitrogen2006

    • Author(s)
      T.Morimoto et al.
    • Journal Title

      Jpn. J. Appl. Phys. 45, [2A]

      Pages: 961-966

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Rotational and Vibrational State Distributions of H_2 Activated on a Heated Tungsten Filament2006

    • Author(s)
      H.Umemoto et al.
    • Journal Title

      J. Appl. Phys. 99, [4]

    • NAID

      120000861413

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] High-Rate Deposition of SiN_x Films over 100 nm/min by Cat-CVD Method at Low Temperatures below 80 ℃2006

    • Author(s)
      T.Osono et al.
    • Journal Title

      Thin Solid Films 501, [1-2]

      Pages: 55-57

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Formation of Highly Moisture-resistive SiN_x Films on Si Substrate by Cat-CVD at Room Temperature2006

    • Author(s)
      T.Minamikawa et al.
    • Journal Title

      Thin Solid Films 501, [1-2]

      Pages: 154-156

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] H(D)-atom Yields in the Quenching of Xe(6s[3/2]_1) by Methane, Ethane, Ethene, Ethyne, and their Isotopologues2006

    • Author(s)
      H.Umemoto
    • Journal Title

      J. Chem. Phys. 125, [3]

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Present Status and Future Feasibility for Industrial Implementation of Cat-CVD (Hot-Wire CVD) Technology2006

    • Author(s)
      H.Matsumura et al.
    • Journal Title

      Thin Solid Films 501, [1-2]

      Pages: 58-60

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Various Applications of Silicon Nitride by Catalytic Chemical Vapor Deposition for Coating, Passivation and Insulating Films2006

    • Author(s)
      A.Masuda et al.
    • Journal Title

      Thin Solid Films 501, [1-2]

      Pages: 149-153

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Magnesium Interlayered Diamond Coating on Silicon2006

    • Author(s)
      M.A.Dar et al.
    • Journal Title

      Int. J. Refractory Metals and Hard Materials 24, [6]

      Pages: 418-426

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] H2 Dilution Effect in the Cat-CVD Processes of the SiH4/NH3 System2006

    • Author(s)
      S.G.Ansari et al.
    • Journal Title

      Thin Solid Films 501, [1-2]

      Pages: 31-34

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Rotational and Vibrational State Distributions of H2 Activated on a Heated Tungsten Filamen2006

    • Author(s)
      H.Umemoto et al.
    • Journal Title

      J. Appl. Phys. 99, [4] 043510

      Pages: 6-6

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] H(D)-atom Yields in the Quenching of <Xe(6s[3/2]i)> by Methane, Ethane, Ethene, Ethyne, and their Isotopologues2006

    • Author(s)
      H.Umemoto
    • Journal Title

      J. Chem. Phys. 125, [3] 034306

      Pages: 7-7

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Rotational and Vibrational State Distributions of H_2 Activated on a Heated Tungsten Filament2006

    • Author(s)
      H.Umemoto et al.
    • Journal Title

      J. Appl. Phys. 99,[4]

    • NAID

      120000861413

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Mass-Spectrometric Studies of Cat-CVD Processes of Organic Silicon Compounds Containing Nitrogen2006

    • Author(s)
      T.Morimoto et al.
    • Journal Title

      Jpn. J. Appl. Phys. 45,[2A]

      Pages: 961-966

    • Related Report
      2006 Annual Research Report
  • [Journal Article] H_2 Dilution Effect in the Cat-CVD Processes of the SiH_4/NH_3 System2006

    • Author(s)
      S.G.Ansari et al.
    • Journal Title

      Thin Solid Films 501,[1-2]

      Pages: 31-34

    • Related Report
      2006 Annual Research Report
  • [Journal Article] High-Rate Deposition of SiN_x Films over 100nm/min by Cat-CVD Method at Low Temperatures below 80℃2006

    • Author(s)
      T.Osono et al.
    • Journal Title

      Thin Solid Films 501,[1-2]

      Pages: 55-57

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Formation of Highly Moisture-resistive SiN_x Films on Si Substrate by Cat-CVD at Room Temperature2006

    • Author(s)
      T.Minamikawa et al.
    • Journal Title

      Thin Solid Films 501,[1-2]

      Pages: 154-156

    • Related Report
      2006 Annual Research Report
  • [Journal Article] H(D)-atom Yields in the Quenching of Xe(6s [3/2]_1) by Methane, Ethane, Ethene, Ethyne, and their Isotopologues2006

    • Author(s)
      H.Umemoto
    • Journal Title

      J. Chem. Phys. 125,[3]

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Present Status and Future Feasibility for Industrial Implementation of Cat-CVD(Hot-Wire CVD) Technology2006

    • Author(s)
      H.Matsumura et al.
    • Journal Title

      Thin Solid Films 501,[1-2]

      Pages: 58-60

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Various Applications of Silicon Nitride by Catalytic Chemical Vapor Deposition for Coating, Passivation and Insulating Films2006

    • Author(s)
      A.Masuda et al.
    • Journal Title

      Thin Solid Films 501,[1-2]]

      Pages: 149-153

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Magnesium Interlayered Diamond Coating on Silicon2006

    • Author(s)
      M.A.Dar et al.
    • Journal Title

      Int. J. Refractory Metals and Hard Materials 24,[6]

      Pages: 418-426

    • Related Report
      2006 Annual Research Report
  • [Journal Article] H_2 Dilution Effect in the Cat-CVD Processes of the SiH_4/NH_3 System2006

    • Author(s)
      S.G.Ansari et al.
    • Journal Title

      Thin Solid Films 501,[1,2]

      Pages: 31-31

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Mass-Spectrometric Studies of Cat-CVD Processes of Organic Silicon Compounds Containing Nitrogen2006

    • Author(s)
      T.Morimoto et al.
    • Journal Title

      Jpn.J.Appl.Phys. 45,[2A]

      Pages: 961-961

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Rotational and Vibrational State Distributions of H_2 Activated on a Heated Tungsten Filament2006

    • Author(s)
      H.Umemoto et al.
    • Journal Title

      J.Appl.Phys. 99,[4]

      Pages: 43510-43510

    • NAID

      120000861413

    • Related Report
      2005 Annual Research Report
  • [Journal Article] High-Rate Deposition of SiN_x Films over 100nm/min by Cat-CVD Method at Low Temperatures below 80℃2006

    • Author(s)
      T.Osono et al.
    • Journal Title

      Thin Solid Films 501,[1,2]

      Pages: 55-55

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Various Applications of Silicon Nitride by Catalytic Chemical Vapor Deposition for Coating, Passivation and Insulating Films2006

    • Author(s)
      A.Masuda et al.
    • Journal Title

      Thin Solid Films 501,[1,2]

      Pages: 149-149

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Formation of Highly Moisture-resistive SiN_x Films on Si Substrate by Cat-CVD at Room Temperature2006

    • Author(s)
      T.Minamikawa et al.
    • Journal Title

      Thin Solid Films 501,[1,2]

      Pages: 154-154

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Moisture-Resistive Properties of SIN_x Films Prepared by Cat-CVD below 100 ℃ for Flexible Organic LED Displays2005

    • Author(s)
      A.Heya et al.
    • Journal Title

      Jpn. J. Appl. Phys. 44, [4A]

      Pages: 1923-1927

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Improvement of Deposition Rate by Sandblast Treatment of Tungsten Wire in Catalytic Chemical Vapor Deposition2005

    • Author(s)
      A.Heya et al.
    • Journal Title

      Jpn. J. Appl. Phys. 44, [4A]

      Pages: 1943-1944

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures2005

    • Author(s)
      M.Takano et al.
    • Journal Title

      Jpn. J. Appl. Phys. 44, [6A]

      Pages: 4098-4102

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Technique for the Production, Preservation, and Transportation of H Atoms in Metal Chambers for Processings2005

    • Author(s)
      S.G.Ansari et al.
    • Journal Title

      J. Vac. Sci. Technol. A 23, [6]

      Pages: 1728-1731

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Moisture-Resistive Properties of SiN_x Films Prepared by Cat-CVD below 100 ℃ for Flexible Organic LED Displays2005

    • Author(s)
      A.Heya et al.
    • Journal Title

      Jpn. J. Appl. Phys. 44, [4A]

      Pages: 1923-1927

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Moisture-Resistive Properties of SiN_x Films Prepared by Cat-CVD below 100℃ for Flexible Organic LED Displays2005

    • Author(s)
      A.Heya et al.
    • Journal Title

      Jpn.J.Appl.Phys. 44,[4A]

      Pages: 1923-1923

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Improvement of Deposition Rate by Sandblast Treatment of Tungsten Wire in Catalytic Chemical Vapor Deposition2005

    • Author(s)
      A.Heya et al.
    • Journal Title

      Jpn.J.Appl.Phys. 44,[4A]

      Pages: 1943-1943

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures2005

    • Author(s)
      M.Takano et al.
    • Journal Title

      Jpn.J.Appl.Phys. 44,[6A]

      Pages: 4098-4098

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Technique for the Production, Preservation, and Transportation of H Atoms in Metal Chambers for Processings2005

    • Author(s)
      S.G.Ansari et al.
    • Journal Title

      J.Vac.Sci.Technol.A 23,[6]

      Pages: 1728-1728

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Cat-CVD SiN Passivation Films for OLEDs and Packaging

    • Author(s)
      A.Heya et al.
    • Journal Title

      Thin Solid Films (in press.)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary

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Published: 2005-04-01   Modified: 2016-04-21  

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