| Project/Area Number |
17550165
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Functional materials/Devices
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| Research Institution | Saitama University |
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Principal Investigator |
UENO Keiji Saitama University, Graduate School of Science and Engineering, Associate Professor, 大学院理工学研究科, 助教授 (40223482)
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| Project Period (FY) |
2005 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2006: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2005: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | thin film transistor / field effect transistor / flexible device / organic macromolecular polymer / inorganic layered material / anisotropic control of polymerization / exfoliation / imprinting / 単結晶有機FET |
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| Research Abstract |
In this research, I tried to fabricate a "flexible" and "high-quality" thin film transistor by using such "anisotropic" structure low-dimensional materials as organic macromolecule polymers and inorganic layered structure semiconductors. For two years research, following results have been obtained.
(1)Optimization of the fabrication process of a SiOx gate substrate surface that has an anisotropic template structure.
(2)Establishment of the fabrication process of a highly ordered thin film of a diacetylene derivative compound.
(3)Successful fabrication of highly ordered and defect-free ;t-conjugated systems by the anisotropic polymerization of a highly-ordered diacetylene derivative thin film.
(4)Successful fabrication of an organic field effect transistor on a mica gate dielectric.
(5)Successful transfer of the anisotropic template surface structure by the imprinting method onto an amorphous surface.
(6)Successful fabrication of a. highly ordered thin film of a polythiophene derivative compound onto the template substrate surface by the horizontal lifting method.
(7)Successful position-selective fabrication of C_<60>domains on the SiOx template substrate surface that has the one-dimensional periodic structures.
(8)Improvement in the performances of the organic field effect transistor fabricated on the mica gate dielectric by inserting a PMMA or OTMS shielding layer between the mica surface and the organic film.
(9)Investigation of the exfoliation method of such layered materials as MoS_2, WSe_2, graphite, etc.
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