| Project/Area Number |
17560009
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Kyushu Institute of Technology |
|---|
Principal Investigator |
IZUMI Akira Kyushu Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (30223043)
|
|---|
| Project Period (FY) |
2005 – 2006
|
| Project Status |
Completed (Fiscal Year 2006)
|
| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2006: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2005: ¥2,400,000 (Direct Cost: ¥2,400,000)
|
|---|
| Keywords | Hot wire / nitridation / ammmonia / silicon nitride / HMDS / SiCN |
|---|
| Research Abstract |
This paper reports about low-temperature nitridation of silicon surfaces using ammonia decomposed species generated on a heated tungsten filament. The surface of Si(100) was nitrided at low temperatures as low as 50℃. The relation between nitridation time and nitridation layer thickness showed that the layer thickness follows the linear law for small nitridation time and a parabolic relationship for large time. The water contact angle measurements revealed that nitridation layer proceeds with island growth in the early stage of nitridation.
SiCN films were deposited by Hot-wire CVD method using Hexamethyldisilazane (HMDS) which is an organic liquid material without exposition. It is found that SiCN films can be deposited using only HMDS as a source material. It is also found that the composition ratio of SiCN can be controlled by changing the flow rate of NH_3.
|
