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Metal organic vapor phase epitaxy of ZnTe based materials and their application to light emitting diodes

Research Project

Project/Area Number 17560010
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionSaga University

Principal Investigator

OGAWA Hiroshi  Saga Univ., Synchrotron light research center, Professor, シンクロトロン光応用研究センター, 教授 (10039290)

Co-Investigator(Kenkyū-buntansha) NISHIO Mitsuhiro  Saga Univ., Fac. Of Sci.& Eng., Professor, 理工学部, 教授 (60109220)
QIXIN Guo  Saga Univ., Fac. Of Sci.& Eng., Associate Professor, 理工学部, 助教授 (60243995)
TANAKA Tooru  Saga Univ., Synctrotron light research center, Assistant, シンクロトロン応用研究センター, 助手 (20325591)
Project Period (FY) 2005 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2006: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 2005: ¥2,100,000 (Direct Cost: ¥2,100,000)
KeywordsZnMgTe / ZnTe / MOVPE / Bridgman method / Purely green LED
Research Abstract

In this study, Phosphorus (P)-doped ZnTe based materials have been prepared and characterized for the applications to the light emitting diode. The P-doped ZnTe layers grown on ZnTe (1 0 0) substrates by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) using tris-dimethylaminophosphorus have exhibited good photoluminescence and electrical properties. As a result, ZnTe layers with a high carrier concentration of 1.3 X 10^<18> cm^<-3> are obtained by using this dopant source. P-doped Zn_<1-x>Mg_xTe (0 < x < 0.31) crystals have been grown by Bridgman technique or MOVPE. Bridgman-grown single crystalline wafers show the carrier concentration of 〜10^<17> cm^<-3>, indicating promising substrates for LED fabrication. On the other hand, suitable growth conditions for preparing epitaxial Zn_<1-x>Mg_xTe layers have been found through considerations on the premature reaction in the system. Furthermore, the specific contact resistance onto Zn_<1-x>Mg_xTe and the recovery from dry-etch-induced damage on ZnTe surfaces have been investigated. As for the preparation of light emitting diodes, a new technique, by which an Al concentration in the diffused layer can be controlled, has been invented, resulting in obtaining a LED with better performance.

Report

(3 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • Research Products

    (12 results)

All 2007 2006 2005

All Journal Article (12 results)

  • [Journal Article] Low-pressure metalorganic vapor phase epitaxy growth of ZnTe2007

    • Author(s)
      Yusuke Kume, Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Wenzhong Shen
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 441-444

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth and Characterization of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy2007

    • Author(s)
      Yusuke Kume, Qixin Guo, Yuji Fukuhara, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 445-448

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Low-pressure metalorganic vapor phase epitaxy growth of ZnTe2007

    • Author(s)
      Yusuke Kume, Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Wenzhong Shen
    • Journal Title

      Journal of Crystal Growth vol.298

      Pages: 441-444

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth and Characterization of ZnTe epilayers on GaAs substrate by metalorganic vapor phase epitaxy2007

    • Author(s)
      Yusuke Kume, Qixin Guo, Yuji Fukuhara, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa
    • Journal Title

      Journal of Crystal Growth vol.298

      Pages: 445-448

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Low-pressure metalorganic vapor phase epitaxy growth of ZaTe2007

    • Author(s)
      Yusuke Kume, Qixin Guo, Tooru Tanaka, Mitsuhiro Nishio, Hiroshi Ogawa, Wenzhour Shen
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 441-444

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases2006

    • Author(s)
      Qixin GUO, Nozomu UESUGI, Tooru TANAKA, Mitsuhiro NISHIO, Hiroshi OGAWA
    • Journal Title

      Japanese Journal of Applied Physics 45

      Pages: 8597-8599

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Reactive Ion Etching of Zinc Oxide Using Methane and Hydrogen Gases2006

    • Author(s)
      Qixin GUO, Nozomu UESUGI, Tooru TANAKA, Mitsuhiro NISHIO, Hiroshi OGAWA
    • Journal Title

      Japanese Journal of Applied Physics vol.45

      Pages: 8597-8599

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Effect of surface treatment on properties of ZnTe LED fabricated by Al thermal diffusion2006

    • Author(s)
      Tooru Tanaka, Kazuki Hayashida, Katsuhiko Saito, Mitsuhiro Nishino, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      Physica status solidi(b) Vol.243

      Pages: 959-962

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethlaminophosphorus2006

    • Author(s)
      Kazuki Hayashida, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, T.Tanigawa, Hiroshi Ogawa
    • Journal Title

      Physica status solidi(c) Vol.3

      Pages: 1172-1175

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Phosphorus-Doped ZnMgTe Bulk Crystals Grown by Vertical Bridgman Method2006

    • Author(s)
      Katsuhiko Saito, Keisuke Kinoshita, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      Physica status solidi(c) Vol.3

      Pages: 812-816

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Growth of Boron-Doped ZnTe Homoepitaxial Layer by Metalorganic Vapor Phase Epitaxy2006

    • Author(s)
      Katsuhiko Saito, Tetsuo Yamashita, Tooru Tanaka, Mitsuhiro Nishio, Qixin Guo, Hiroshi Ogawa
    • Journal Title

      Physica status solidi(c) Vol.3

      Pages: 833-836

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Recovery from Dry Etching Damage in ZnTe by Thermal Annealing2005

    • Author(s)
      Qixin GUO, Yusukei KUME, Tooru TANAKA, Mitsuhiro NISHIO, Hiroshi OGAWA
    • Journal Title

      Japanese Journal of Applied Physics Vol.4

    • NAID

      10016590990

    • Related Report
      2005 Annual Research Report

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Published: 2005-04-01   Modified: 2016-04-21  

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