| Project/Area Number |
17560018
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Kitami Institute of Technology |
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Principal Investigator |
B.TAKEYAMA Mayumi Kitami Institute of Technology, Faculty Development, Associate Professor (80236512)
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| Co-Investigator(Kenkyū-buntansha) |
NOYA Atsushi Kitami Institute of Teclnology, Faculty Development, Professor (60133807)
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| Project Period (FY) |
2005 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥3,680,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥180,000)
Fiscal Year 2007: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2006: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2005: ¥2,300,000 (Direct Cost: ¥2,300,000)
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| Keywords | LSI / Cu interconnects / diffusion barrier / intermixing layer / radical nitriding / intermixing layer / 極薄バリヤ / low-k材料 / 界面 / Hot-wire方式 |
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| Research Abstract |
This project aims to examine the formation of interfaces without an intermixing layer on an extremely thin barrier applicable to the 45 nm technology node in Cu interconnects of high performance.
We develop a new deposition method of forming a thin nitride barrier, in which sputter-deposited metal film is then treated by thermally cracked radical species. This method enables us to obtain an extremely thin TiN barrier in an almost stoichiometric composition without substrate heating. The prepared 3〜5 nm-thick barrier shows good barrier properties without any structural change and intermixing at every interface, indicating a promising method for obtaining an extremely thin nitride barrier.
We also examine low-temperature deposition of an attractive material of ZrB_2 as a barrier applicable to interconnects technology. The ZrB_2 film deposited at low temperatures from room temperature to 500℃, lower than those reported so far, shows nanocrystalline texture, and is thermally stable due to annealing at temperatures up to 700℃ for 1h. It is revealed that the 3 nm-thick ZrB_2 barrier has also good barrier properties without structural change and intermixing at every interface in the Cu/ZrB_2/SiO_2/Si system. We can demonstrate that the ZrB_2 film is one of new barrier materials for the Cu/field oxide layer system in the 45 nm technology node or beyond.
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