| Project/Area Number |
17560023
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Shizuoka University |
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Principal Investigator |
FUKUDA Yasuo Shizuoka University, Research Institute of Electronics, Professor, 電子工学研究所, 教授 (30208970)
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| Co-Investigator(Kenkyū-buntansha) |
SHIMOMURA Masaru Shizuoka University, Research Institute of Electronics, Research Associate, 電子工学研究所, 助手 (20292279)
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| Project Period (FY) |
2005 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 2006: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2005: ¥1,300,000 (Direct Cost: ¥1,300,000)
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| Keywords | Compound semiconductor / Semiconductor property / Nano-structure / Two-dimensional metal / Electron spectroscopy / Surface property / Surface structure / Sulfur adsorption / In(111)A / 表面電子状態 / LEED / シンクロトロン放射光 / 内殻電子状態シフト |
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| Research Abstract |
It was well known that dangling bonds, of which electronic states are located in the band gap, exist on the III-V compound semiconductor surfaces. The states pin the Fermi level of the semiconductors, leading to injury of performance in electronic devices. It was found that the performance is tremendously improved by sulfur-treatment of the surfaces. However, the structures and electronic states of the treated surfaces were not well understood. The surface structures and electronic states for InAs(111)A and InP(111)A, which have different surface structures compared to GaAs(111)A and GaP(111)A, were studied. Especially two-dimensional metallization of the former surface was focused.
The InAs(111)A and InP(111)A surfaces are reconstructed into a (2x2) structure by the sulfur-treatment. The theoretical calculation suggests that the InAs(111)A and InP(111)A surfaces are insulator and metallic, respectively. The UPS (ultra-violet photoemission spectroscopy) result indicates that the electronic states at the Fermi level are nothing and significant for the former and latter. This result is very important because the semiconductor surfaces are made metallic by treatment with a nonmetallic element. The more detailed study is required to understand the reason.
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