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Radiation damage mechanism of advanced semiconductor materials and devices

Research Project

Project/Area Number 17560054
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Engineering fundamentals
Research InstitutionKumamoto National College of Technology

Principal Investigator

SHIGAKI Kazuasda  Kumamoto National College of Technology, Department of Electronics Engineering, Associated Professor (50044722)

Co-Investigator(Kenkyū-buntansha) OHYAMA Hidenori  Kumamoto National College of Technology, Department of Electronics Engineering, Professor (80152271)
HAYAMA Kiyoteru  Kumamoto National College of Technology, Department of Electronics Engineering, Associated Professor (00238148)
KUDOU Tomohiro  Kumamoto National College of Technology, Department of General, Associated Professor (90225160)
TAKAKURA Kenichiro  Kumamoto National College of Technology, Department of Electronics Engineering, Associated Professor (70353349)
Project Period (FY) 2005 – 2007
Project Status Completed (Fiscal Year 2007)
Budget Amount *help
¥3,770,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥270,000)
Fiscal Year 2007: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2006: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2005: ¥1,700,000 (Direct Cost: ¥1,700,000)
Keywordsradiation damage / electron / proton / SiC transistor / SOI transisor / induced lattice defect / recovery / 電子線 / 照射損傷 / 高温照射 / GaN LED / 歪Si / MOSFET
Research Abstract

In these days when the use of nuclear reactors, high-energy particle accelerators and artificial satellites expands, the development of semiconductor devices, which can normally operate in a radiation-rich environment, is extensively taking place everywhere. In the project, the degradation of the electrical performance and the generated lattice defects in SOI (Silicon on Insulator) MOS (Metal Oxide Semiconductor) FETs, SiC transistors and SiGe diode, subjected to 1-MeV electrons, and 20-MeV protons, were investigated as a function of fluence, fluence rate and radiation source.
The main conclusions which can be made from the research project :
1. The degradation of the electrical performance of semiconductor devices increases with increasing radiation fluence, while it decreases with increasing germanium content.
2. After irradiation, electron capture levels are observed in SiC epitaxial layers which are probably related with a B interstitial complex. The electron capture levels, which act as generation-recombination center, are mainly responsible for the degradation of device performance.
3. The electron capture levels induced in B-doped SiC epitaxial layers of SiC transistor are thought to be mainly responsible for the decrease of the drain current and effective mobility due to the donor removal together with leakage current by interface damage
4. The damage coefficient for proton irradiation is nearly the same as for neutron irradiation and is about three orders of magnitude larger than that for electron irradiation. This difference is due to the different number of knock-on atoms, which is correlated with the difference of mass and the possibility of nuclear collisions for the formation of lattice defects.
5. The degraded performance and induced deep levels recover by thermal annealing.

Report

(4 results)
  • 2007 Annual Research Report   Final Research Report Summary
  • 2006 Annual Research Report
  • 2005 Annual Research Report
  • Research Products

    (28 results)

All 2007 2006 2005

All Journal Article (24 results) (of which Peer Reviewed: 8 results) Presentation (4 results)

  • [Journal Article] Performance degradation mechanism of irradiated GaAlAs LED2007

    • Author(s)
      H.Ohyama, et. al.
    • Journal Title

      Physica B 401-402

      Pages: 33-36

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Dose rare dependence of the back gate degradation in thin gateoxide PD-SOI MOSFETs by 2-MeV electron irradiation2007

    • Author(s)
      K.Hayama, et. al.
    • Journal Title

      Physica B 84

      Pages: 2125-2128

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Effects of gate interface on performance degradation of irradiated SiC-MESFET2007

    • Author(s)
      H.Ohyama, et. al.
    • Journal Title

      Physica B 401-402

      Pages: 37-40

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Dose rate dependence of radiation-induced lattice defect and property degradation in npn Si bipolar transistors by 2-MeV electron irradiation2007

    • Author(s)
      K. Hayama, et. al.
    • Journal Title

      Physica B 401-402

      Pages: 469-472

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Annual Research Report 2007 Final Research Report Summary
  • [Journal Article] Degradation and their recovery behavior of irradiated GaAlAs LEDs2007

    • Author(s)
      H. Ohyama, et. al.
    • Journal Title

      Solid State Phenomena 131-133

      Pages: 119-124

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Performance degradation mechanism of irradiated GaAlAsLED2007

    • Author(s)
      H. Ohyama, et. al.
    • Journal Title

      Physica B 401-402

      Pages: 33-36

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dose rare dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation2007

    • Author(s)
      K. Hayama, et. al.
    • Journal Title

      Microelectron. Engineering 84

      Pages: 2125-2128

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFET2007

    • Author(s)
      J.M. Rafi, et. al.
    • Journal Title

      Microelectron. Engineering 84

      Pages: 2081-2084

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of gate interface on performance degradation of irradiated SiC-MESFET2007

    • Author(s)
      H. Ohyama, et. al.
    • Journal Title

      Physica B 401-402

      Pages: 37-40

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] IR studies of oxygen-vacancy defects in electron irradiated Ge-doped Si2007

    • Author(s)
      C. Londos, et. al.
    • Journal Title

      Physica B, 401-402

      Pages: 487-491

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Radiation source dependence of device performance degradation for 4H-SiC MESFETs2006

    • Author(s)
      H. Ohyama, et. al.
    • Journal Title

      Superlattice and Microstructure 40

      Pages: 623-637

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Temperature dependence of drain current hysteresis in FD and PD-SOI n-MOSFETs2006

    • Author(s)
      K. Hayama, et. al.
    • Journal Title

      Nucl. Instrum. Methods B 253

      Pages: 246-249

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation2006

    • Author(s)
      H.Ohyama et al.
    • Journal Title

      Physica B 376-377

      Pages: 382-384

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Investigation of back gate interface states by drain current hysteresis in PD-SOI-n-MOSFETs2006

    • Author(s)
      K.Hayama et al.
    • Journal Title

      Physica B 376-377

      Pages: 416-419

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Effect of deep levels and interface states on the lifetime control of trench-IGBTs by electron irradiation2006

    • Author(s)
      M.Nakabayashi et al.
    • Journal Title

      Physica B 376-377

      Pages: 395-398

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Analysis of 2-MeV electron-irradiation induced degradation in FD-SOIMOSFETs fabricated on ELTRAN and UNIBOND wafer2006

    • Author(s)
      K.Hayama et al.
    • Journal Title

      IEEE Trans. on Nucl. and Sci, 53

      Pages: 1939-1944

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Radiation source dependence of device performance degradation for 4H-SiC MESFETs2006

    • Author(s)
      H.Ohyama et al.
    • Journal Title

      Superlattice and Microstructure 40

      Pages: 623-637

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons2006

    • Author(s)
      K.Takakura et al.
    • Journal Title

      Materials Science in Semiconductor Processing, 9

      Pages: 292-295

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Radiation damage of SiC Schottky diodes by electron irradiation2005

    • Author(s)
      H.Ohyama et al.
    • Journal Title

      Journal of Materials Science 16

      Pages: 455-458

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accuulation mode operation2005

    • Author(s)
      K.Hayama et al.
    • Journal Title

      Journal of Materials Science 16

      Pages: 459-462

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Effects of high temperature electron irradiation on trench-IGBT2005

    • Author(s)
      M.Nakabayashi et al.
    • Journal Title

      Journal of Materials Science 16

      Pages: 463-467

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs2005

    • Author(s)
      K.Hayama et al.
    • Journal Title

      Microelectronics Reliability 45

      Pages: 1376-1381

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Effects of radiation-induced defects on device performance in electron irradiated SiC-MESFETs2005

    • Author(s)
      H.Ohyama et al.
    • Journal Title

      proceeding of the 11^<th> International Conference on Defects : Recognition and Physics in Semiconductors, DRIP XI

      Pages: 78-78

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons2005

    • Author(s)
      K.Takakura et al.
    • Journal Title

      proceeding of the 11^<th> International Conference on Defects : Recognition and Physics in Semiconductors, DRIP XI

      Pages: 101-101

    • Related Report
      2005 Annual Research Report
  • [Presentation] Gate induced floating body effects in SiON and HfO triple gate SOI FinFETs2007

    • Author(s)
      J M. Rafi, H. Ohyama, et. al.
    • Organizer
      EUROSOI 2007
    • Place of Presentation
      Leuven Belgium
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Performance degradation mechanism of irradiated GaAlAs LED2007

    • Author(s)
      H. Ohyama, et. al.
    • Organizer
      24th international conference on defects in semiconductors
    • Place of Presentation
      Albuqueque, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Effects of gate interface on performance degradation of irradiated SiC-MESFET2007

    • Author(s)
      H. Ohyama, et. al.
    • Organizer
      4th international conference on defects in semiconductors
    • Place of Presentation
      Albuqueque, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Presentation] Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation2005

    • Author(s)
      H.Ohyama, et. al.
    • Organizer
      23th International Conference on Defects in Semiconductors ICDS-23
    • Place of Presentation
      Awaji Island Japan
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary

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Published: 2005-04-01   Modified: 2016-04-21  

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