Study on resonant effect of Zenet tunneling current
| Project/Area Number |
17560282
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
MORIFUJI Masato Osaka University, Department of Engineering, Assistant professor (00230144)
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| Project Period (FY) |
2005 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥1,950,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥150,000)
Fiscal Year 2007: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2006: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2005: ¥600,000 (Direct Cost: ¥600,000)
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| Keywords | Zener tunneling current / Resonant effect / Electron wave intereference / Resonant tunneling |
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| Research Abstract |
The purpose of this study is to investigate resonant effect of Zener tunneling current in a p-i-n diode which has a quantum well or sup erlattice in the intrinsic region.
In order to do it, first, we have developed a semiclassical theory to describe tunneling phenomena (M. Morifuji and J. Nishie, Physical Review B71, 035334 (2005)). Next, we developed a theory to describe formation process of a quantum state (K. Ikegami, M. Morifuji, et. al., Physica E33, 381-387 (2006)). By using these theories, we calculated Zener tunneling current in various conditions. and found conditions in which the resonant effect is dominant.
Further, we extended these theories to the case of time dependent voltage and calculated Zener current under high-frequency AC voltage. We also applied these theories to the case of magnetic tunneling, that is spin-polarization exists.
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Report
(4 results)
Research Products
(8 results)
