Blue electroluminescence device by MOS structure with Si-implanted SiO_2
| Project/Area Number |
17560289
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Toyama Prefectural University |
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Principal Investigator |
MATSUDA Toshihiro Toyama Prefectural University, Faculty of Engineering, Professor, 工学部, 教授 (70326073)
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| Co-Investigator(Kenkyū-buntansha) |
IWATA Hideyuki Toyama Prefectural University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (80223402)
IWATSUBO Satoshi Toyama Industrial Technology Center, Senior Researcher, 副主幹研究員 (30416127)
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| Project Period (FY) |
2005 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 2006: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2005: ¥2,000,000 (Direct Cost: ¥2,000,000)
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| Keywords | Ion implantation / MOS capacitor / Light emission / Electroluminescence / Ion beam sputtering / Transparent electrode |
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| Research Abstract |
Since silicon is the most important material for very large scale integrated circuits (VLSI), superior process compatibility with Si VLSI makes Si-based light emitting devices attractive for the wide variety of application of integrated intelligent displays. Blue electroluminescence (EL) devices by MOS structure with Si-implanted Si0_2 were studied. MOS structures of which gate oxide had excess Si in SiO_2 were fabricated on p- or n-type Si substrates with Au/ITO electrodes. In addition to implantation, Si ion doping technique was used to introduce excess Si into the gate oxide. Electric and EL characteristics of the devices were analyzed.
Test devices with higher Si dose gave larger current in large V_G region regardless of the type of Si substrate. Capacitance vs. gate voltage (C-V) characteristics showed hysteresis curves. It suggests that charges in the traps induced by Si-implantation are altered with the polarity of applied voltages. MOS structures with Si ion doped oxide did not give hysteresis curves. The damaged surfaces of Si substrates, which were observed by cross section TEM, caused large leakage current. SIMS analysis suggests that the amount of light ion species such as SiF_<3^+> and SiF_<2^+> was more than the expected, resulting in deeper ion profile.
EL spectra under direct-current (dc) operation showed a peak at 450 nm in MOS structures with Si-implanted SiO_2 of both Si substrate types. EL spectra of MOS structures with either substrate type can be separated into 5 components i.e.hv=1.0,1.6,1.9,2.4,2.8 eV. A model of EL emission mechanism is proposed for the Si-implanted MOS EL device. EL spectra under alternating current (ac) operation have the same components as dc-EL. The lower photon energy components of EL spectra become larger in ac operation. It can be interpreted as the difference of response speed of trap levels induced into the gate oxide by ion implantation.
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Report
(3 results)
Research Products
(5 results)
