| Budget Amount *help |
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2006: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2005: ¥2,400,000 (Direct Cost: ¥2,400,000)
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| Research Abstract |
This study is to aim at realization of metal-gas-semiconductorfield-effect transistor (MGSFET) with radiation hardness by replacing gate insulator oxide by gas. Additional effects of high breakdown voltage of the gate and device reliability can be expected. High voltage insulation with, for example, SF_6 gas has long been applied to power transformer, however, the application to field-effect transistor in not yet disclosed in integrated circuit field.
In 2005, an insulator material to be removed and its etching solution were chosen to realize the device structure. A set of Si_3N_4 and hot-phosphoric acid was proven to be inadequate because that the hot-phosphoric acid adversely etched silicon substrate surface. Thus, a set of SiO_2 and buffered HF solution was chosen.
In 2006, utilizing the developed techniques, an MGSFET with N_2 gas gate insulation was successfully obtained resulting in normal FET operation. This may be the world-first success for gas-insulated FET. After forced gate breakdown of MOS and MGS transistors, the gate leakage current becomes bigger for the MOS, otherwise, much smaller for the MGS. This implies MGS has a potential of radiation-hardness characteristics against cosmic-ray radiation and hot-carrier effect. and
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