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A study on improvement and functionalization of non-stoichiometric silicon titanium nitride compounds

Research Project

Project/Area Number 17560590
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionTohoku University

Principal Investigator

YOSHITAKA Kasukabe  Tohoku University, Center for International Exchange, Professor, 国際交流センター, 教授 (30194749)

Co-Investigator(Kenkyū-buntansha) KASUYA Atsuo  Center for Interdisciplinary, Research, Tohoku University, professor, 学際科学国際高等研究センター, 教授 (10005986)
SUTO Shozo  Tohoku University, Graduate school of Science, Tohoku University, Professor, 大学院理学研究科, 教授 (40171277)
山村 力  東北大学, 大学院・工学研究科, 教授 (80005363)
Project Period (FY) 2005 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2006: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2005: ¥2,900,000 (Direct Cost: ¥2,900,000)
Keywordsnon-stoichiometric compounds / nitride / functionalized materials / ion implantation / in-situ observation / transmission electron microscope / electron energy loss spectroscope / molecular orbital calculation
Research Abstract

Recently, it has been reported that properties of non-stoichiometric titanium nitride compounds (TiN_y), such as electrical conductivity, diffusion barrier, wear resistance, etc. depend not only on chemical composition, but also on orientation relationships between TiN_y films and substrates. Therefore, much interest has been focused on atomistic growth processes of TiN_y films.In order to clarify the atomistic growth processes due to ion implantation and to control the orientation, in-situ observations by using transmission electron microscope and electron energy loss spectroscope have been carried out, along with composition analysis and with the characterization of electronic structure. TiN_y has epitaxially grown in N-implanted Ti films by nitriding both hcp-Ti and TiH_x., or only hcp-Ti with epitaxial orientations in as-deposited Ti films on NaC1 (001) substrates at room temperature or 250 ℃. The characterizations of electronic structure of Ti films before and after implantation indicate that octahedral sites of hcp-Ti with larger space have higher electron density, which leads to the invasion of implanted ions into the octahedral sites, and that the hcp-fcc transformation accompanied with the partial inheritance of atomic arrangement of hcp-Ti is induced by the shear in <01・0> direction on (00・1) plane promoted by the forming of strong covalent bonds mainly consisted of hybridized orbitals due to combination of Ti3d and N2p, and by the weakening of Ti-Ti bonds. In conclusion, atomistic epitaxial growth processes of Ti compound films by ion implantation have been clarified by the approach of the detailed analysis of experimental results, combined with the characterization of electronic structure, which gives rise to a possibility to develop new functionalized Ti compound films with controlled orientations, for example, TiN_y diffusion barriers in Au/α-Sn systems, band-gap-controlled functionalized SiTi_xN_y systems.

Report

(3 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • Research Products

    (14 results)

All 2007 2006 2005

All Journal Article (14 results)

  • [Journal Article] Characterization of Au Thin Films Deposited on α -Sn(111)-(3x3)/ InSb(111)A Surfaces2007

    • Author(s)
      Y.Kasukabe
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 394-399

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Characterization of Au Thin Films Deposited on a-Sn(III)-(3x3)/ InSb(III)A Surfaces2007

    • Author(s)
      Y.Kasukabe
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 394-399

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Characterization of Au Thin Films Deposited on α -Sn(111)-(3x3)/InSb(111)A Surfaces2007

    • Author(s)
      Y.Kasukabe
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 394-399

    • Related Report
      2006 Annual Research Report
  • [Journal Article] イオン注入法によるチタン薄膜の窒化機構2006

    • Author(s)
      粕壁善隆
    • Journal Title

      まてりあ 45巻1号

      Pages: 23-31

    • NAID

      10017153292

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary 2005 Annual Research Report
  • [Journal Article] Growth Mechanism of Cubic Titanium Nitrides Thin Films by Nitrogen-Implantation2006

    • Author(s)
      Y.Kasukabe
    • Journal Title

      JAEA-Review 2005-001

      Pages: 217-219

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary 2005 Annual Research Report
  • [Journal Article] Characterization of Carbonizing Processes of Titanium Thin Films by Carbon-Implantation2006

    • Author(s)
      Y.Kasukabe
    • Journal Title

      JAEA-Review 2006-042

      Pages: 146-146

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] Nitriding Mechanism of Titanium Thin Film by Ion Implantation2006

    • Author(s)
      Y.Kasukabe
    • Journal Title

      Materia Japan 45-1

      Pages: 23-31

    • NAID

      10017153292

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Growth Mechanism of Cubic Titanium Nitride Thin Films by Nitrogen-Implantation2006

    • Author(s)
      Y.Kasukabe
    • Journal Title

      JAEA-Review 2005-1

      Pages: 217-219

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Characterization of Carbonizing Processes o Titanium Thin Films by Carbon-Implantation2006

    • Author(s)
      Y.Kasukabe
    • Journal Title

      JAEA-Review 2006-042

      Pages: 146-146

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Carbonizing Processes of Titanium Thin Films by Carbon-Implantation2005

    • Author(s)
      S.Nishida
    • Journal Title

      e-J. Surf. Sci. Nanotech. 3

      Pages: 319-326

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Characterization of Deposited and Nitrogen-implanted Titanium Films2005

    • Author(s)
      J.J.Wang
    • Journal Title

      e-J. Surf. Sci. Nanotech. 3

      Pages: 476-483

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Characterization of Deposited and Nitrogen implanted Titanium Films2005

    • Author(s)
      J.J.Wang
    • Journal Title

      e-J. Surf. Sci. Nanotech. 3

      Pages: 476-483

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Carbonizing Processes of Titanium Thin Films by Carbon-Implantation2005

    • Author(s)
      S.Nishida
    • Journal Title

      e-J.Surf.Sci.Nanotech. 3

      Pages: 319-326

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Characterization of Deposited and Nitrogen-implanted Titanium Films2005

    • Author(s)
      J.J.Wang
    • Journal Title

      e-J.Surf.Sci.Nanotech. 3

      Pages: 476-483

    • Related Report
      2005 Annual Research Report

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Published: 2005-04-01   Modified: 2016-04-21  

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