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Study of ceramic coherent interface produced by solid-liquid reaction

Research Project

Project/Area Number 17560619
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Structural/Functional materials
Research InstitutionKumamoto University

Principal Investigator

IWAMOTO Chihiro  Kumamoto University, Graduate school of Science and Technology, Associate Professor Kumamoto University, 大学院自然科学研究科, 助教授 (60311635)

Co-Investigator(Kenkyū-buntansha) SATONAKA Shinobu  Kumamoto University, Graduate School of Science and Technology, Professor, 大学院自然科学研究科, 教授 (40128278)
Project Period (FY) 2005 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2006: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2005: ¥2,700,000 (Direct Cost: ¥2,700,000)
Keywordsinterface / High-resolution electron microscopy / resistance welding
Research Abstract

In this study, resistance welding was applied to the bonding of SiC to metals. The welded interface structure was observed by high-resolution transmission electron microscopy to reveal the reaction during welding. In addition, in order to reveal the mechanism of the reaction products formation during resistance welding, we applied in-situ heating HRTEM technique to SiC/molten metals reactions.
Firstly, we developed the resistance welding machine to bond the SiC to metals. The maximum bonding temperature of SiC varied with the rate of welding current rise. At the welded interface, A1_4C_3, Al and an amorphous phase were formed adjacent to SiC in the SiC/Al system. The SiC/Al interface was flat at the atomic level and the crystallographic orientation relationship between SiC and Al was observed. For the SiC/Ag-Cu-Ti alloy system, the reaction phases TiC and Ti_5Si_3 were formed at the interface. The thickness of the reaction phases varied with the rate of welding current rise, and, under specific welding conditions, Ag formed directly adjacent to SiC without the reaction phases.
The in-situ heating HRTEM technique revealed that, at the front of the spreading Ag-Cu-Ti molten alloy on the SiC substrate, TiC is formed and the Ti_5Si_3 is formed approximately 10 nm behind the front of the TiC. No habit plane is observed at the front of the TiC. In spite of the thin TiC layer region, crystallograp hic orientation relationship is observed between SiC and TiC such as (10-12)SiC//(111)TiC, [1-210]SiC//[1-10]TiC. In contrast, layer by layer growth of TiC at the front of the spreading molten alloy was also observed.

Report

(3 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • Research Products

    (10 results)

All 2007 2006 2005

All Journal Article (10 results)

  • [Journal Article] Development of Resistance Welding for Silicon Carbide2007

    • Author(s)
      K.Hamasuna et al.
    • Journal Title

      Mater. Trans. 48

      Pages: 1060-1063

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Reactive Wetting Dynamics on 6H-SiC Surface with Oxide Layer2007

    • Author(s)
      S.-I.Tanaka et al.
    • Journal Title

      Advanced Materials Research 11-12

      Pages: 571-571

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Development of Resistance Welding for Silicon Carbide2007

    • Author(s)
      K.Hamasuna et al.
    • Journal Title

      Mater. Trans Vol.48

      Pages: 1060-1060

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Reactive Wetting Dynamics on 6H-SiC Surface with Oxide Layer2007

    • Author(s)
      S.-I.Tanaka et al.
    • Journal Title

      Advanced Materials Research Vol.11-12

      Pages: 571-571

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Development of Resistance Welding for Silicon Carbide2007

    • Author(s)
      K.Hamasuna et al.
    • Journal Title

      Mater. Trans. 48(印刷中)

    • Related Report
      2006 Annual Research Report
  • [Journal Article] In-situ HRTEM observations of various morphologies at the front of spreading molten alloy on the SiC substrate2006

    • Author(s)
      C.Iwamoto et al.
    • Journal Title

      Proceedings of the 16th International Microscopy Congress

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary
  • [Journal Article] In situHRTEM observations of various morphologies at the front of spreading molten alloy on the SiC substrate2006

    • Author(s)
      C.Iwamoto et al.
    • Journal Title

      Proceedings of the 16th International Microscopy Congress

      Pages: 71-64

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Reactive Wetting Dynamics on 6H-SiC Surface with Oxide Layer2006

    • Author(s)
      S.I.Tanaka et al.
    • Journal Title

      Advanced Materials Research 11-12

      Pages: 571-571

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Nanoscale Dynamics at Reactive Wetting Front on SiC2005

    • Author(s)
      S.-I.Tanaka et al.
    • Journal Title

      Materials Science Forum 502

      Pages: 269-274

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Nanoscale Dynamics at Reactive Wetting Front on SiC2005

    • Author(s)
      S.-I.Tanaka et al.
    • Journal Title

      Materials Science Forum Vol.502

      Pages: 269-269

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary

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Published: 2005-04-01   Modified: 2016-04-21  

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