| Project/Area Number |
17560625
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
SUGIMOTO Masaki Japan Atomic Energy Agency, Quantum Beam Science Directorate, Assistant Principal Researcher, 量子ビーム応用研究部門, 研究副主幹 (90354943)
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIKAWA Masahito Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principle Researcher, 量子ビーム応用研究部門, 研究主幹 (40354948)
YAMAMOTO Shunya Japan Atomic Energy Agency, Quantum Beam Science Directorate, Assistant Principal Researcher, 量子ビーム応用研究部門, 研究副主幹 (70354941)
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| Project Period (FY) |
2005 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2006: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2005: ¥2,700,000 (Direct Cost: ¥2,700,000)
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| Keywords | Silicon Carbide / Ceramic thin film / Ion beam irradiation / Gas separation / Organic-inorganic conversion / Si-based polymer / 有機-無機変換 / イオン注入 / 水素分離 / 触媒 |
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| Research Abstract |
Silicon carbide (SiC) thin film synthesized from polycarbosilane (PCS) as a ceramic precursor polymer has a excellent heat-resistance and corrosion resistance, and the coating is potentially useful as a hydrogen gas separation filters. But a current subject is improvement of its gas permeability and separation ratio. So we investigated possibility of gas penetrability control of SiC film using the hydrocracking catalyst layer formation by platinum ion implantation and the formation of nano hall structure by transmission of the various kinds of high energy ion beam.
SiC film was synthesized from cross linked PCS thin film on the porous alumina substrate. As a result of X-ray diffraction spectrometry and rutherford backscattering spectrometry, it became clear that the SiC thin film has the amorphous structure containing oxygen. The amorphous SiC structure with low density compared with SiC ceramics fired at high temperature, it shrank by ion beam with high energy enough for transmission the thin film, therefore the amount of nano hole in the amorphous SiC which hydrogen could pass was decreased. In the case of the platinum ion implantation to make hydrocracking catalyst layer, the permeability of the hydrogen and nitrogen gases had decreased further. It is thought that this reason is that the density of the limited part of the SiC thin film by the platinum ion implantation is increasing.
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