次世代半導体デバイスのための遷移金属材料プラズマエッチングプロセスの開発

• Project/Area Number: 17760027
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Kyoto University
• Principal Investigator: 高橋 和生 京大, 工学(系)研究科(研究院), 助手 (50335189)
• Project Period (FY): 2005
• Project Status: Completed (Fiscal Year 2005)
• Budget Amount: ¥1,800,000 (Direct Cost: ¥1,800,000); Fiscal Year 2005: ¥1,800,000 (Direct Cost: ¥1,800,000)