低温形成微結晶SiCを用いた高性能透明薄膜トランジスタの開発

• Project/Area Number: 17760248
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 綿引 達郎 東工大, 理工学研究科, 助手 (10361768)
• Project Period (FY): 2005 – 2006
• Project Status: Completed (Fiscal Year 2006)
• Budget Amount: ¥3,500,000 (Direct Cost: ¥3,500,000); Fiscal Year 2006: ¥800,000 (Direct Cost: ¥800,000); Fiscal Year 2005: ¥2,700,000 (Direct Cost: ¥2,700,000)