| Budget Amount *help |
¥43,160,000 (Direct Cost: ¥33,200,000、Indirect Cost: ¥9,960,000)
Fiscal Year 2019: ¥13,260,000 (Direct Cost: ¥10,200,000、Indirect Cost: ¥3,060,000)
Fiscal Year 2018: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
Fiscal Year 2017: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
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| Outline of Final Research Achievements |
We report gigantic response for external field in strongly correlated oxides micro-nano-structures. Typical achievements are as follows. Demonstrations of ● a steep resistance jump with orders of magnitude changes caused by a metal-insulator transition in single-crystal VO2 nanowires with a 20 nm electrode gap, ● a three-dimensional Fe3O4 epitaxial nanowires at a 10 nm length scale using an original nanofabrication technique that comprises nanoimprint lithography and inclined thin-film deposition, ● VO2 nanowire channel FET through a hybrid gate showing an enhancement in the resistive modulation efficiency, ●VO2 thin films successfully grown onto hBN thin flakes, ● a gate-tunable abrupt switching device based on a VO2 microwire monolithically integrated with a two-dimensional WSe2 semiconductor. ●systematically study for a chemical FET composed of a SmNiO3 film channel and an ionic liquid gate insulator.
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