| Budget Amount *help |
¥43,810,000 (Direct Cost: ¥33,700,000、Indirect Cost: ¥10,110,000)
Fiscal Year 2020: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2019: ¥24,570,000 (Direct Cost: ¥18,900,000、Indirect Cost: ¥5,670,000)
Fiscal Year 2018: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
Fiscal Year 2017: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
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| Outline of Final Research Achievements |
We developed technologies and working principles for "valley-spintronics", where valley and spin in 2D materials are used for information carriers. We discovered "spin-valley Hall effect" in bilayer graphene, which can be used to mutually convert spin current and valley current. We demonstrated generation of a charge neutral current of spin and valley using this spin-valley Hall effect. We also revealed phase transition of the quantum Hall antiferromagnetic state in bilayer graphene, which is a platform for the spin-valley Hall effect. We also investigated device technologies for transition-metal-dichalcogenides-based spin-valley-optoelectronics devices.
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