Photon-field control of luminescent function of rare-earth ions in semiconductors

• Project/Area Number: 17H01264
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: 藤原 康文 大阪大学, 工学研究科, 教授 (10181421)
• Co-Investigator(Kenkyū-buntansha): 舘林 潤 大阪大学, 工学研究科, 講師 (40558805) ; 市川 修平 大阪大学, 工学研究科, 助教 (50803673) ; 児島 貴徳 大阪大学, 工学研究科, 助教 (70725100)
• Project Period (FY): 2017-04-01 – 2019-03-31
• Project Status: Discontinued (Fiscal Year 2018)
• Budget Amount: ¥44,200,000 (Direct Cost: ¥34,000,000、Indirect Cost: ¥10,200,000); Fiscal Year 2018: ¥14,300,000 (Direct Cost: ¥11,000,000、Indirect Cost: ¥3,300,000); Fiscal Year 2017: ¥20,800,000 (Direct Cost: ¥16,000,000、Indirect Cost: ¥4,800,000)
• Keywords: 希土類元素 / フォトン場制御 / 発光機能

Outline of Annual Research Achievements

研究代表者は、従来の発光ダイオード(LED)とは全く発光原理が異なる、ユウロピウム(Eu)添加GaN (GaN:Eu)を用いた窒化物半導体狭帯域赤色LEDの開発に、世界に先駆けて成功している。本研究では、これまでの伝導帯・価電子帯間のインターバンド遷移による発光機能ではなく、希土類元素特有のイントラセンター遷移による発光機能に着目した「半導体イントラ・フォトニクスの開拓」を目的としている。この日本発オリジナルである「Eu添加GaNを用いた赤色LED」の超高輝度化を当面の目標に、半導体への原子レベル制御Eu添加手法を基盤として、フォトン場によるEu発光機能の究極的制御を実証することを目指している。　今年度に得られた成果は下記の通りである。
【課題２】Eu添加GaNマイクロ光共振器の作製とEu発光機能の操作：Eu発光強度の増大を目的に、成長用基板をサファイアからn型GaNに変更し、LEDを作製する要素技術の確立に取り組んだ。Eu 発光波長に近い621.5 nmで最大反射率98.1 %を示すn型DBR の作製に成功した。

Research Progress Status

平成30年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

平成30年度が最終年度であるため、記入しない。

Research Products

• [Int'l Joint Research] University of Amsterdam(オランダ)
• [Int'l Joint Research] Lehigh University/West Chester University/Ohio University(米国)
• [Int'l Joint Research] Hanyang University(韓国)
• [Int'l Joint Research] University of Amsterdam(オランダ)
• [Int'l Joint Research] Lehigh University/West Chester University/Ohio University(米国)
• [Int'l Joint Research] Hanyoung University(韓国)
• [Journal Article] Perspective: Highly efficient GaN-based red LEDs using europium doping (2018)
  • Author(s): B. Mitchell, V. Dierolf, T. Gregorkiewicz, and Y. Fujiwara
  • Journal Title: Journal of Applied Physics Volume: 123 Issue: 16
  • DOI: 10.1063/1.5010762
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy (2018)
  • Author(s): J. Takatsu, R. Fuji, J. Tatebayashi, D. Timmerman, A. Lesage, T. Gregorkiewicz, and Y. Fujiwara
  • Journal Title: Journal of Applied Physics Volume: 123 Issue: 16
  • DOI: 10.1063/1.5011303
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy (2018)
  • Author(s): Inaba Tomohiro、Kojima Takanori、Yamashita Genki、Matsubara Eiichi、Mitchell Brandon、Miyagawa Reina、Eryu Osamu、Tatebayashi Jun、Ashida Masaaki、Fujiwara Yasufumi
  • Journal Title: Journal of Applied Physics Volume: 123 Issue: 16 Pages: 161419-161419
  • DOI: 10.1063/1.5011283
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Detection of In segregation in InGaN by using Eu as a probe (2017)
  • Author(s): J. Takatsu, B. Mitchell, A. Koizumi, S. Yamanaka, M. Matsuda, T. Gregorkiewicz, T. Kojima, and Y. Fujiwara
  • Journal Title: Journal of Crystal Growth Volume: 470 Pages: 831-834
  • DOI: 10.1016/j.jcrysgro.2016.12.101
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Surface morphology and optical properties of Eu3+ ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy (2017)
  • Author(s): R. Fuji, B. Mitchell, A. Koizumi, T. Inaba, and Y. Fujiwara
  • Journal Title: Journal of Crystal Growth Volume: 470 Pages: 862-865
  • DOI: 10.1016/j.jcrysgro.2017.01.015
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Emission enhancement and its mechanism of Eu-doped GaN by strain engineering (2017)
  • Author(s): T. Inaba, B. Mitchell, A. Koizumi, and Y. Fujiwara
  • Journal Title: Optical Materials Express Volume: 7 Issue: 4 Pages: 1381-1387
  • DOI: 10.1364/ome.7.001381
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] High-power Eu-doped GaN red LED based on a multilayer structure grown at lower temperatures by organometallic vapor phase epitaxy (2017)
  • Author(s): W. Zhu, B. Mitchell, D. Timmerman, A. Koizumi, T. Gregorkiewicz, and Y. Fujiwara
  • Journal Title: MRS Advances Volume: 2 Issue: 3 Pages: 159-164
  • DOI: 10.1557/adv.2017.67
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Synthesis and Characterization of a Novel Liquid Eu Precursor EuCppm2 Allowing for the Control of the Eu Oxidation State Ratio in GaN Thin Films Grown by OMVPE (2017)
  • Author(s): B. Mitchell, A. Koizumi, T. Nunokawa, Y. Kuboshima, T. Mogi, S. Higashi, K. Kikukawa, H. Ofuchi, T. Honma, and Y. Fujiwara
  • Journal Title: Materials Chemistry and Physics Volume: 193 Pages: 140-146
  • DOI: 10.1016/j.matchemphys.2017.02.021
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Charge state of vacancy defects in Eu-doped GaN (2017)
  • Author(s): B. Mitchell, N. Hernandez, D. Lee, A. Koizumi, Y. Fujiwara, and V. Dierolf
  • Journal Title: Physical Review B Volume: 96 Issue: 6
  • DOI: 10.1103/physrevb.96.064308
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Pathway towards high-efficiency Eu-doped GaN light-emitting diodes (2017)
  • Author(s): I. E. Fragkos, C.-K. Tan, V. Dierolf, Y. Fujiwara, and N. Tansu
  • Journal Title: Scientific Reports Volume: 7 Issue: 1
  • DOI: 10.1038/s41598-017-15302-y
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Physics of efficiency droop in GaN:Eu light-emitting diodes (2017)
  • Author(s): I. E. Fragkos, V. Dierolf, Y. Fujiwara, and N. Tansu
  • Journal Title: Scientific Reports Volume: 7 Issue: 1
  • DOI: 10.1038/s41598-017-17033-6
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Re-excitation of trivalent europium ions doped into gallium nitride revealed through photoluminescence under femtosecond pulsed excitation (2017)
  • Author(s): W. Zhu, R. Wei, D. Timmerman, T. Gregorkiewicz, B. Mitchell, Y. Fujiwara, and V. Dierolf
  • Journal Title: ACS Photonics Volume: 5 Issue: 3 Pages: 875-880
  • DOI: 10.1021/acsphotonics.7b01090
  • Peer Reviewed / Int'l Joint Research
• [Presentation] Demonstration of red vertical-microcavity LEDs with Eu-doped GaN as an active layer (2018)
  • Author(s): K. Shiomi, T. Inaba, J. Tatebayashi, and Y. Fujiwara
  • Organizer: 6th International Conference on Light-Emitting Devices and Their Industrial Applications 2018 (LEDIA2018), Pacifco Yokohama, Japan, April 23-27
  • Int'l Joint Research
• [Presentation] Eu添加GaNを用いた波長超安定・狭帯域赤色LEDの開発 (2018)
  • Author(s): 藤原康文
  • Organizer: レーザー学会学術講演会第38回年次大会、25aIV-2、京都市勧業館みやこめっせ、京都市左京区、1月24 -26日
  • Invited
• [Presentation] Eu添加GaN 波長超安定・狭帯域赤色発光ダイオードの新展開 (2018)
  • Author(s): 藤原康文
  • Organizer: 日本材料学会平成29年度第4回半導体エレクトロニクス部門委員会第1回講演会・見学会、1-3、徳島大学常三島キャンパス工業会館メモリアルホール、徳島市、1月27日
  • Invited
• [Presentation] 狭帯域・波長超安定Eu添加GaN赤色発光ダイオードの新展開 ～特異構造制御とフォトン場制御～ (2018)
  • Author(s): 藤原康文、稲葉智宏、朱婉新、舘林潤
  • Organizer: 第65回 応用物理学会春季学術講演会シンポジウム「窒化物半導体特異構造の科学 ～格子欠陥はどこまで制御できるのか：先端評価と機能探索～」、19p-E202-2、早稲田大学西早稲田キャンパス、東京都新宿区、3月17-20日
  • Invited
• [Presentation] Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN (2017)
  • Author(s): Y. Fujiwara
  • Organizer: 2017 International Advanced Laser Application Summit Forum, Shenzhen University, Shenzhen, China, May 21-22
  • Int'l Joint Research / Invited
• [Presentation] Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN (2017)
  • Author(s): Y. Fujiwara, T. Inaba, W. Zhu, B. Mitchell, T. Kojima, and T. Gregorkiewicz
  • Organizer: 12th International Conference on Nitride Semiconductors, Strausbourg, France, July 24-28
  • Int'l Joint Research / Invited
• [Presentation] Intrinsic and extrinsic control of Eu luminescence in GaN for highly efficient wavelength-stable narrow-band red light-emitting diodes (2017)
  • Author(s): Y. Fujiwara, T. Inaba, W. Zhu, B. Mitchell, T. Gregorkiewicz, and J. Tatebayashi
  • Organizer: 6th International Workshop on Epitaxial Growth and Fundmental Properties of Semiconductor Nanostructures, Como, Italy, September 25-28
  • Int'l Joint Research / Invited
• [Presentation] New development of Eu-doped GaN narrow-band red light-emitting diodes (2017)
  • Author(s): Y. Fujiwara, T. Inaba, W. Zhu, B. Mitchell, T. Gregorkiewicz, and J. Tatebayashi
  • Organizer: Satellite Workshop of Kanamori Memorial Symposium - Recent Progress in Materials Science for Spintronics and Energy Applications-, Osaka University, Osaka, October 2-3
  • Int'l Joint Research / Invited
• [Presentation] New development of narrow-band red LEDs using Eu-doped GaN - Intrinsic control and extrinsic control - (2017)
  • Author(s): Y. Fujiwara
  • Organizer: International Thin Films Conference (TACT2017), C-I-0630, National Dong Hwa University, Hualien, Taiwan, October 15-18
  • Int'l Joint Research / Invited
• [Presentation] Towards highly efficient GaN-based red light-emitting diodes (2017)
  • Author(s): Y. Fujiwara
  • Organizer: AEARU Advanced Materials Science Workshop 2017, Osaka University, Osaka, Japan, November 1
  • Int'l Joint Research / Invited
• [Presentation] Eu添加GaN狭帯域赤色LEDの新展開 (2017)
  • Author(s): 藤原康文、稲葉智宏、朱婉新、児島貴徳、舘林潤
  • Organizer: 第368回蛍光体同学会、化学会館ホール、東京都千代田区、6月2日
  • Invited
• [Presentation] 希土類添加半導体の新展開：窒化物半導体狭帯域赤色LED (2017)
  • Author(s): 藤原康文
  • Organizer: 第65回 CVD 研究会 （第28回夏季セミナー） 、プラザ洞津、三重県津市、8月8日
  • Invited
• [Presentation] 希土類添加GaNによる赤色LEDとレーザーの可能性 (2017)
  • Author(s): 藤原康文
  • Organizer: 第1回可視光半導体レーザー調査委員会（兼VLDAC第11回半導体レーザー専門委員会）、大阪大学吹田キャンパス、吹田市、10月4日
  • Invited
• [Presentation] 半導体ナノワイヤの光機能と新展開 (2017)
  • Author(s): 舘林潤、藤原康文、荒川泰彦
  • Organizer: 日本学術振興会第125委員会第238回研究会、キャンパスプラザ京都、京都市下京区、10月25日
  • Invited
• [Presentation] Eu 添加 GaN 波長超安定・狭帯域赤色 LED の新展開 (2017)
  • Author(s): 藤原康文、稲葉智宏、朱婉新、舘林潤
  • Organizer: 日本金属学会第5回エレクトロニクス薄膜材料研究会「電子・情報・エネルギー素子と機能材料の最近の研究(5)」、兵庫県立大学姫路工学キャンパス、姫路市、11月2日
  • Invited
• [Presentation] ここまでできた狭帯域赤色LED、そのキラーアプリは？ (2017)
  • Author(s): 藤原康文
  • Organizer: 日本レーザー学会第5回光感性専門委員会、大阪大学吹田キャンパス、吹田市、11月13日
  • Invited
• [Presentation] 窒化物半導体波長超安定・狭帯域赤色LEDの新展開 (2017)
  • Author(s): 藤原康文
  • Organizer: 平成29年度神戸大学物性実験研究室セミナー、神戸大学滝川記念学術交流会館、神戸市灘区、12月3日
  • Invited
• [Presentation] Eu添加GaNを用いた波長超安定・狭帯域赤色LEDの開発 (2017)
  • Author(s): 藤原康文
  • Organizer: 平成29年度JLEDS技術委員会JLEDSセミナー、LED照明推進協議会、東京都港区、12月8日
  • Invited
• [Remarks] 大阪大学藤原研究室
  • URL: http://www.mat.eng.osaka-u.ac.jp/mse6/
• [Remarks] 大阪大学藤原研究室紹介動画
  • URL: http://www.mat.eng.osaka-u.ac.jp/mse6/?video