| Budget Amount *help |
¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2020: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2019: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2018: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2017: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
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| Outline of Final Research Achievements |
Electrical manipulation and read-out of quantum states in zero-dimensional quantum dots (QDs) by nanogap metal electrodes is expected to bring about innovation in quantum information processing. In this study, we fabricated single QD transistors for the manipulation of single spin states in the terahertz frequency range. Narrow gap III-V compound semiconductors, such as InAs, InSb, and GaSb are used as the QD material in order to utilize the strong spin-orbit interaction in them. We also demonstrated the electrical modulation of conductance in the metal quantum point contacts for the electrical readout of the quantum states in the fabricated QD transistors. These works are opening a way for novel quantum information applications on QD systems.
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