| Budget Amount *help |
¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2021: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2020: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2019: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2018: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2017: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
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| Outline of Final Research Achievements |
We have developed a fabrication technique for high-quality ultra-fine InGaN/GaN nanostructures by the hydrogen environment anisotropic thermal etching (HEATE) method, a low-damage etching technique, and systematically elucidated the InGaN quantum disk diameter dependence of emission properties over a wide range from 12 to 2020 nm. Experimental validation of fundamental technologies for novel nanostructured optical devices, such as fabrication of ultrafine InGaN quantum disks with an average diameter of 9 nm that emit light clearly at room temperature, effective suppression of surface non-radiative recombination by saturated ozone water treatment, and development of ammonia-added HEATE method that enables high aspect ratio nanofabrication, was conducted to achieve the target of this research. The fabrication of nitride semiconductor ultra-fine nanostructures and the development of basic technologies for nanostructured optical devices were completed with better-than-expected results.
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