| Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2019: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2018: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2017: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
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| Outline of Final Research Achievements |
We have studied homoepitaxial growth technique of hexagonal boron nitride (h-BN) on exfoliated h-BN substrates synthesized by high-pressure and high-temperature (HPHT) method. During the course of this research, the new characterization method for growth substrates based on photoluminescence imaging technique has developed. By employing the characterization system, we have given light of the 3D impurity/defect domain structure for h-BN grown by HPHT method, and confirmed that the crystallinity of the CVD layer can be improved compared with that of HPHT exfoliated substrates.
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