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2D array of Dopant at the hetero interface of IV group semiconductors

Research Project

Project/Area Number 17H02777
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Crystal engineering
Research InstitutionUniversity of Hyogo

Principal Investigator

Kazushi Miki  兵庫県立大学, 工学研究科, 教授 (30354335)

Co-Investigator(Kenkyū-buntansha) 唐 佳芸  兵庫県立大学, 工学研究科, 助教 (70785287)
坂本 謙二  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 (00222000)
Project Period (FY) 2017-04-01 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2019: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2018: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2017: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Keywordsシリコン / ドーパント / 重金属 / 低次元構造 / 放射光 / 局所構造解析 / 磁性不純物 / ドーピング
Outline of Final Research Achievements

In the field of semiconductor, doping is the intentional introduction of another element into an the semiconductor for the purpose of controlling its electric conductivity. Dopant can also modulate or generate other material functional properties. In this work, for the application into the spintronics, we succeeded in fabrication of low dimensional structures of heavy metal elements, Mn and Bi, dopants in silicon semiconductor. We buried Mn chains (1D structure) on Si(001) surface with Ge few monolayers, then analyzed it with using polarized XAFS (X-ray Absorption Fine Structure) at SPring-8. It strongly suggested that Mn dopant has low dimensional structure. In the case of Bi dopant, we also buried the Bi nanolines in Si layers, then we analyzed with XAFS at SPring-8. The results show that 400 degree C is the critical temperature to electrically activate the Bi dopants in Si crystal.

Academic Significance and Societal Importance of the Research Achievements

本結果は材料開発の一つのブレークスルーであり、ドーパントの低次元構造を用いた新たなデバイス新材料を模索する事が可能になる。期待できる機能材料は、(1)高い移動度を有するチャネル1、(2)核スピンを使った量子コンピュータ(量子ビットの1次元構造体)2、(3)Digital Magnetic Alloyと呼ばれる磁性材料(ハーフメタル)などである。

Report

(4 results)
  • 2019 Annual Research Report   Final Research Report ( PDF )
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • Research Products

    (31 results)

All 2020 2019 2018 2017 Other

All Int'l Joint Research (3 results) Journal Article (4 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 4 results) Presentation (24 results) (of which Int'l Joint Research: 4 results,  Invited: 4 results)

  • [Int'l Joint Research] University College, London(英国)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] University College, London(英国)

    • Related Report
      2018 Annual Research Report
  • [Int'l Joint Research] University College, London(英国)

    • Related Report
      2017 Annual Research Report
  • [Journal Article] Polymer‐Based Organic Field‐Effect Transistors with Active Layers Aligned by Highly Hydrophobic Nanogrooved Surfaces2019

    • Author(s)
      Bulgarevich Kirill、Sakamoto Kenji、Minari Takeo、Yasuda Takeshi、Miki Kazushi、Takeuchi Masayuki
    • Journal Title

      Advanced Functional Materials

      Volume: 29 Issue: 45 Pages: 1905365-1905365

    • DOI

      10.1002/adfm.201905365

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Atomic layer doping of Mn magnetic impurities from surface chains at a Ge/Si hetero-interface2018

    • Author(s)
      Murata Koichi、Kirkham Christopher、Tsubomatsu Satoshi、Kanazawa Takashi、Nitta Kiyofumi、Terada Yasuko、Uruga Tomoya、Nittoh Koh-ichi、Bowler David R.、Miki Kazushi
    • Journal Title

      Nanoscale

      Volume: 10 Issue: 1 Pages: 295-301

    • DOI

      10.1039/c7nr07177a

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Dopant activation mechanism of Bi wire-δ-doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory2017

    • Author(s)
      Koichi Murata、Christopher Kirkham、Masaru Shimomura、Kiyofumi Nitta、Tomoya Uruga、Yasuko Terada、Koh-ichi Nittoh、David R Bowler、Kazushi Miki
    • Journal Title

      J. Phys.: Condens. Matter

      Volume: 29 Issue: 15 Pages: 155001-155001

    • DOI

      10.1088/1361-648x/aa6180

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Autosurfactant of the second kind: Bi enables δ-doping of Bi in Si2017

    • Author(s)
      K. Murata, K. Miki, and S. Fukatsu
    • Journal Title

      Appl. Phys. Lett. 152104

      Volume: 111 Issue: 15 Pages: 152104-152104

    • DOI

      10.1063/1.5001154

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] X-ray Fluorescence Holography of n type dopant, Sn in β-Ga2O3 widegap oxide semiconductor2020

    • Author(s)
      K. Miki, N. Happo, K. Kimura, K. Sasaki, Y. Tang, K. Nawata, Y. Maeda, S. Kitamura, H. Ozaki, K. Hisatsune, R. Yamaguchi, H. Tajiri, S. Yamakoshi, K. Hayashi, A. Kuramata
    • Organizer
      Symposium on Surface and Nano Science 2020
    • Related Report
      2019 Annual Research Report
  • [Presentation] A Sn dopant in βGa2O3 semiconductor as an functional active site depending on anneal atmosphere2019

    • Author(s)
      Kazushi Miki
    • Organizer
      The 4th international symposium on “Elucidation of Property of Next Generation Functional Materials and Surface/Interface”
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] X-ray Fluorescence Holography Investigation on Sn in Sn: β-Ga2O3 widegap oxide semiconductor2019

    • Author(s)
      K. Miki, N. Happo, K. Kimura, K. Sasaki, Y. Tang , K. Nawata, H. Kitafuji, S. Kitamura, H. Ozaki, K. Hisatsune, R. Yamaguchi, H. Tajiri, S. Yamakoshi, K. Hayashi, A. Kuramata
    • Organizer
      Materials Research Meeting 2019 symposium A-1 Local Atomic Structure Analysis on the Active Center of Functional Materials
    • Related Report
      2019 Annual Research Report
  • [Presentation] Alignment-Induced Mobility Enhancement and Small Device-to-Device Variation of Polymer-Based Organic Field-Effect Transistors with Highly Hydrophobic Nano-Grooved Gate Dielectric Surfaces2019

    • Author(s)
      ブルガレビッチ キリル、坂本謙二、三成剛生、安田剛、三木一司、竹内正之
    • Organizer
      第80回応用物理学会 秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Sn: β型酸化ガリウムのドーパント局所構造 II2019

    • Author(s)
      三木一司、柳田健之、佐々木公平、唐佳藝、河口範明、山腰茂伸、倉又朗人
    • Organizer
      第80回応用物理学会 秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Sn:β型酸化ガリウムの光電子ホログラフィー2019

    • Author(s)
      宮脇 涼太、桃野 浩樹、 深見 駿、 松田博之、佐々木公平、唐佳藝、下村勝、 Peng Dawei、荻 昌史、岩間 司、平岡 将、 宮本 将伸、 北藤 滉、西端 龍太郎、 山腰茂伸、大門 寛、 倉又朗人、 三木一司
    • Organizer
      2019年度関西薄膜・表面物理セミナー
    • Related Report
      2019 Annual Research Report
  • [Presentation] Sn:β型酸化ガリウムの蛍光X線ホログラフィー2019

    • Author(s)
      縄田皓太郎、 三木一司、八方直久、木村耕治、 佐々木公平、唐佳藝、前田幸秀、北村真也、尾崎ひかる、久常健太郎、 山口亮太、田尻寛男、 山腰茂伸、 林好一、 倉又朗人
    • Organizer
      2019年度関西薄膜・表面物理セミナー
    • Related Report
      2019 Annual Research Report
  • [Presentation] PLD法によるβ型酸化ガリウム薄膜のp型ドーパント探索2019

    • Author(s)
      前田幸秀、森下裕貴、 嶋津亮、川上新世、唐 佳藝、堀田育志、三木一司
    • Organizer
      2019年度関西薄膜・表面物理セミナー
    • Related Report
      2019 Annual Research Report
  • [Presentation] 量子情報処理応用に向けたSi結晶中へのBiドーピング2019

    • Author(s)
      三木 一司、前川 雅樹、八方 直久、木村 耕治、唐 佳藝、宮本将伸、嶋津 亮、前田幸秀、北藤 滉、縄田 皓太郎、北村 真也、田尻 寛男、林 好一、河裾 厚男
    • Organizer
      QSTサイエンスフェスタ2019
    • Related Report
      2019 Annual Research Report
  • [Presentation] Fluorescence X-ray Holography of Sn from Sn: β-Ga2O3 widegap oxide semiconductor.2019

    • Author(s)
      K. Miki, N. Happo, K. Kimura, K. Sasaki, Y. Tang , K. Nawata, H. Kitafuji, S. Kitamura, H. Ozaki, K. Hisatsune, R. Yamaguchi, H. Tajiri, S. Yamakoshi, K. Hayashi, A. Kuramata
    • Organizer
      Symposium on 3D Active-site Science in London-3D Atomic-imaging Technologies from Material to Biology-
    • Related Report
      2018 Annual Research Report
  • [Presentation] Two-step ultrasonication method to make 2D arraying of midnanometer-sized (10-100 nm) gold particles2019

    • Author(s)
      Kazushi Miki
    • Organizer
      Symposium on Surface and Nano Science 2019
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Sn: β型酸化ガリウムのドーパント局所構造2019

    • Author(s)
      三木 一司、八方 直久、木村 耕治、佐々木 公平、唐 佳藝、縄田 皓太郎、北藤 滉、北村 真也、尾崎 ひかる、久常 健太郎、山口 亮太、田尻 寛男、山腰 茂伸、林 好一、倉又 朗人
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Dopant activation mechanism of Bi wire-doping into Si crystal2018

    • Author(s)
      Kazushi Miki, Koichi Murata, Christopher Kirkham, Masaru Shimomura, Kiyofumi Nitta, Tomoya Uruga, Yasuko Terada, Koh-ichi Nittoh, David R Bowler
    • Organizer
      14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 高速化データ駆動科学としての陽電子回折2018

    • Author(s)
      田中和幸,星健夫, 一宮彪彦,望月出海, 三木一司, 兵頭俊夫, 福島孝治
    • Organizer
      ポスト「京」重点課題(7)「次世代の産業を支える新機能デバイス・ 高性能材料の創成(CDMSI)」第4回シンポジウム
    • Related Report
      2018 Annual Research Report
  • [Presentation] 陽電子回折実験向け解析ソフトウェアの高度化2018

    • Author(s)
      田中和幸、星健夫、一宮彪彦、望月出海、三木一司、兵頭俊夫
    • Organizer
      物理学会2018年秋季大会(物性)
    • Related Report
      2018 Annual Research Report
  • [Presentation] 原子間力顕微鏡によるSi(110)-(16x2)再構成表面の観察2018

    • Author(s)
      山本 達也、和泉 遼、松本 克春、内藤 賀公、李 艶君、菅原 康弘、三木 一司
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Si結晶中へのBiのイオン注入ドーピング2018

    • Author(s)
      三木 一司、河裾 厚男、前川 雅樹、田尻 寛男、八方 直久、Ang Artoni Kevin Roquero、林 好一
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Very High Electrical Stability of Bottom-Gate/Top-Contact Type Polymer-Based Organic Field-Effect Transistors with Perfluoropolymer-Coated Gate Dielectrics2018

    • Author(s)
      Kirill Bulgarevich、坂本謙二、三成剛生、安田剛、三木一司、竹内正之
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Formation of Uniform and High-Coverage Monolayer Films of 2 Dimetional Midnanometer-Sized Gold Particles over the Entire Surfaces of 1.5-in. Substrates2018

    • Author(s)
      Kazushi Miki
    • Organizer
      平成30年度大阪大学国際合同会議「次世代機能性材料・表面/界面物性の解明と機能探索の動向」
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Doping of wired-Mn magnetic impurities at Ge/Si interface2017

    • Author(s)
      K. Murata, K. Miki, C. Kirkham, S. Tsubomatsu, T. Kanazawa, K. Nitta, Y. Terada, T. Uruga, K. Nittoh and D.R. Bowler
    • Organizer
      The 8th International Symposium on Surface Science
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Mechanism of initial thermal oxidation on Si(113) surfaces2017

    • Author(s)
      A. Ogawa, H. Tanaka, S. Ohno, M. Tanaka, K. Miki, S. Ogawa, Y.Takakuwa
    • Organizer
      The 8th International Symposium on Surface Science
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Introduction of wired-heavy metal dopants into Si substrates2017

    • Author(s)
      三木一司
    • Organizer
      応用物理学会関西支部セミナー「機能性材料・デバイス解析の最前線」
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] 新しい手法を使った、シリコン半導体ドーピングと評価2017

    • Author(s)
      三木一司
    • Organizer
      半導体新規化学プロセス研究会第一回例会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] 放射光評価手法を使ったドーピング過程の研究2017

    • Author(s)
      三木一司
    • Organizer
      兵庫県立大学 知のシンポジウム2017
    • Related Report
      2017 Annual Research Report

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Published: 2017-04-28   Modified: 2023-03-23  

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