Low-loss vertical-type diamond power MOSFET

• Project/Area Number: 17H02786
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Kanazawa University
• Principal Investigator: Tokuda Norio 金沢大学, ナノマテリアル研究所, 教授 (80462860)
• Co-Investigator(Kenkyū-buntansha): 加藤 宙光 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 (00415655) ; 大曲 新矢 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 (40712211)
• Project Period (FY): 2017-04-01 – 2020-03-31
• Project Status: Completed (Fiscal Year 2019)
• Budget Amount: ¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000); Fiscal Year 2019: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2018: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2017: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
• Keywords: 表面・界面物性 / ダイヤモンド

Outline of Final Research Achievements

Diamond is a semiconductor material expected to realize the highest energy-saving effect as a power device used in various fields. In this study, we obtained the following three results: (1) development of V-shaped and U-shaped trench structure formation process using solid solution reaction of carbon for fabrication of vertical diamond MOSFET structure, (2) a quantitative evaluation of interface state density at Al2O3/diamond interfaces which cause low channel mobility in diamond MOSFETs, (3) development of a reduction process of the interface state density.

Academic Significance and Societal Importance of the Research Achievements

本研究成果は、主にダイヤモンド、広くは炭素に関するマテリアルサイエンスの発展、そしてデバイス応用が期待される。ダイヤモンドはパワーデバイスだけでなく、量子デバイス/センサ応用も期待されており、ダイヤモンドを用いたパワー・量子デバイスの実用化により、次世代ダイヤモンドエレクトロニクス及びその産業の創出、そして省エネ・低炭素社会及びSociety 5.0の実現への貢献が期待される。

Research Products

• [Journal Article] Formation of U-shaped diamond trenches with vertical {111} sidewalls by anisotropic etching of diamond (110) surfaces (2020)
  • Author(s): Nagai M.、Nakamura Y.、Yamada T.、Tabakoya T.、Matsumoto T.、Inokuma T.、Nebel C.E.、Makino T.、Yamasaki S.、Tokuda N.
  • Journal Title: Diamond and Related Materials Volume: 103 Pages: 107713-107713
  • DOI: 10.1016/j.diamond.2020.107713
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Conductive-probe atomic force microscopy and Kelvin-probe force microscopy characterization of OH-terminated diamond (111) surfaces with step-terrace structures (2019)
  • Author(s): Nagai Masatsugu、Yoshida Ryo、Yamada Tatsuki、Tabakoya Taira、Nebel Christoph E.、Yamasaki Satoshi、Makino Toshiharu、Matsumoto Tsubasa、Inokuma Takao、Tokuda Norio
  • Journal Title: Japanese Journal of Applied Physics Volume: 58 Issue: SI Pages: SIIB08-SIIB08
  • DOI: 10.7567/1347-4065/ab1b5c
  • NAID: 210000156440
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations (2019)
  • Author(s): Matsumoto Tsubasa、Kato Hiromitsu、Makino Toshiharu、Ogura Masahiko、Takeuchi Daisuke、Yamasaki Satoshi、Inokuma Takao、Tokuda Norio
  • Journal Title: Applied Physics Letters Volume: 114 Issue: 24 Pages: 242101-242101
  • DOI: 10.1063/1.5100328
  • Peer Reviewed / Open Access
• [Journal Article] High‐Rate Growth of Single‐Crystalline Diamond (100) Films by Hot‐Filament Chemical Vapor Deposition with Tantalum Filaments at 3000?°C (2019)
  • Author(s): Tabakoya Taira、Kanada Shohei、Wakui Yusuke、Takamori Yue、Yamada Tatsuki、Nagai Masatsugu、Kojima Yoshiyasu、Ariyada Osamu、Yamasaki Satoshi、Nebel Christoph E.、Matsumoto Tsubasa、Inokuma Takao、Tokuda Norio
  • Journal Title: physica status solidi (a) Volume: 216 Issue: 21 Pages: 1900244-1900244
  • DOI: 10.1002/pssa.201900244
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Homoepitaxial Diamond Growth by Plasma-Enhanced Chemical Vapor Deposition (2019)
  • Author(s): Tokuda Norio
  • Journal Title: Novel Aspects of Diamond Volume: 121 Pages: 1-29
  • DOI: 10.1007/978-3-030-12469-4_1
  • ISBN: 9783030124687, 9783030124694
  • Peer Reviewed
• [Journal Article] Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour (2018)
  • Author(s): Nagai Masatsugu、Nakanishi Kazuhiro、Takahashi Hiraku、Kato Hiromitsu、Makino Toshiharu、Yamasaki Satoshi、Matsumoto Tsubasa、Inokuma Takao、Tokuda Norio
  • Journal Title: Scientific Reports Volume: 8 Issue: 1 Pages: 6687-6687
  • DOI: 10.1038/s41598-018-25193-2
  • Peer Reviewed / Open Access
• [Journal Article] Formation of atomically flat hydroxyl-terminated diamond (1?1?1) surfaces via water vapor annealing (2018)
  • Author(s): Yoshida Ryo、Miyata Daisuke、Makino Toshiharu、Yamasaki Satoshi、Matsumoto Tsubasa、Inokuma Takao、Tokuda Norio
  • Journal Title: Applied Surface Science Volume: 458 Pages: 222-225
  • DOI: 10.1016/j.apsusc.2018.07.094
  • Peer Reviewed / Open Access
• [Journal Article] Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer (2018)
  • Author(s): T. Matsumoto, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Imura, A. Ueda, T. Inokuma, and N. Tokuda
  • Journal Title: Japanese Journal of Applied Physics Volume: 57 Issue: 4S Pages: 04FR01-04FR01
  • DOI: 10.7567/jjap.57.04fr01
  • NAID: 210000149007
  • Peer Reviewed / Int'l Joint Research
• [Presentation] ダイヤモンドデバイスとMOS界面の現状 (2020)
  • Author(s): 松本翼、桜井海匡、加藤宙光、牧野俊晴、小倉政彦、竹内大輔、山崎聡、猪熊孝夫、德田規夫
  • Organizer: 電子デバイス界面テクノとロジー研究会
  • Invited
• [Presentation] MOS interface control for inversion channel diamond MOSFET (2020)
  • Author(s): N. Tokuda, T. Matsumoto, X. Zhang, T. Inokuma, S. Yamasaki, H. Kato, T. Makino, C.E. Nebel, R.J. Nemanich
  • Organizer: Hasselt Diamond Workshop 2020
  • Int'l Joint Research / Invited
• [Presentation] Conductive-Probe AFM and Kelvin-Probe Force Microscopy Characterization of OH-terminated Diamond (111) Surfaces with Step-Terrace Structures through Water Vapor Annealing (2019)
  • Author(s): M. Nagai, R. Yoshida, T. Yamada, T. Tabakoya, C.E. Nebel, S. Yamasaki, T. Makino, T. Matsumoto, T. Inokuma, N. Tokuda
  • Organizer: EM-NANO 2019
  • Int'l Joint Research
• [Presentation] Surface planarization of diamond substrates using carbon solid solution into nickel (2019)
  • Author(s): K. Sakauchi, T. Tabakya, M. Nagai, C.E. Nebel, T. Matsumoto, T. Inokuma, N. Tokuda
  • Organizer: EM-NANO 2019
  • Int'l Joint Research
• [Presentation] Electrical characteristics of Ni/B-doped diamond (111) contact after annealing (2019)
  • Author(s): Y. Nakamur, T. Tabakoya, M. Nagai, Y. Katagiri, C.E. Nebel, T. Matsumoto, T. Inokuma, N. Tokuda
  • Organizer: EM-NANO 2019
  • Int'l Joint Research
• [Presentation] Reduction of Interface State Density for Diamond MOS structures by Wet Annealing after Hydrogen Plasma Treatment (2019)
  • Author(s): U. Sakurai, T. Matsumoto, M. Nagai, M. Ogura, T. Makino, S. Yamasaki, C.E. Nebel, T. Inokuma, N. Tokuda
  • Organizer: EM-NANO 2019
  • Int'l Joint Research
• [Presentation] ダイヤモンドエレクトロニクスの基礎と技術動向 (2019)
  • Author(s): 徳田規夫
  • Organizer: サイエンス＆テクノロジーセミナー
  • Invited
• [Presentation] Advances in inversion channel diamond MOSFETs (2019)
  • Author(s): N. Tokuda, T. Matsumoto, T. Inokuma, S. Yamasaki, H. Kato, T. Makino, C.E. Nebel
  • Organizer: SSDM 2019
  • Int'l Joint Research / Invited
• [Presentation] ダイヤモンド半導体の技術動向と可能性 (2019)
  • Author(s): 徳田規夫
  • Organizer: 技術情報協会セミナー
  • Invited
• [Presentation] Recent progress for inversion channel mobility improvement in diamond MOSFETsRecent progress for inversion channel mobility improvement in diamond MOSFETsRecent progress for inversion channel mobility improvement in diamond MOSFETsRecent progress for inversion channel mobility improvement in diamond MOSFETsRecent progress for inversion channel mobility improvement in diamond MOSFETs (2019)
  • Author(s): T. Matsumoto, U. Sakurai, T. Yamakawa, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, T. Inokuma, N. Tokuda
  • Organizer: APWS 2019
  • Int'l Joint Research / Invited
• [Presentation] Recent Progress in Inversion Channel Diamond MOSFET (2019)
  • Author(s): N. Tokuda, T. Matsumoto, T. Inokuma, S. Yamasaki, H. Kato, T. Makino, C.E. Nebel
  • Organizer: 2019 MRS FALL MEETING&EXHBIT
  • Int'l Joint Research / Invited
• [Presentation] 反転層チャネルダイヤモンドMOSFETの実証 (2019)
  • Author(s): 松本翼，加藤宙光，小山和博，牧野俊晴，小倉政彦，竹内大輔，猪熊孝夫，山崎聡，徳田規夫
  • Organizer: 2019年第66回応用物理学会春季学術講演会
  • Invited
• [Presentation] ダイヤモンドパワーデバイス (2019)
  • Author(s): 徳田規夫
  • Organizer: 新技術研究会主催 第314回 月例研究会
  • Invited
• [Presentation] ダイヤモンドエレクトロニクスの 将来像と結晶材料開発 (2018)
  • Author(s): 徳田規夫
  • Organizer: 日本学術振興会 結晶成長の科学と技術 第161委員会第108回研究会「2025年結晶産業の未来～新規材料素材編～」
  • Invited
• [Presentation] ダイヤモンドで究極の省エネ～低炭素社会の実現を目指す～ (2018)
  • Author(s): 徳田規夫
  • Organizer: 日本海イノベーション会議 新エネルギー戦略-振動発電とダイヤモンド-
  • Invited
• [Presentation] ダイヤモンドパワーデバイスの最新動向とその可能性 (2018)
  • Author(s): 徳田規夫
  • Organizer: 技術情報協会主催セミナー 次世代パワーデバイスの最新開発動向と実用化展望
  • Invited
• [Presentation] 反転層チャネルダイヤモンドMOSFET ～ ウェットアニール処理による高品質ダイヤモンドMOS界面の形成 ～ (2018)
  • Author(s): 松本翼，加藤宙光，牧野俊晴，小倉政彦，竹内大輔，猪熊孝夫，山崎聡，徳田規夫
  • Organizer: MOSデバイス・メモリ高性能化－材料・プロセス技術 （シリコン材料・デバイス研究会と応用物理学会シリコンテクノロジー分科会との合同開催）
  • Invited
• [Presentation] ダイヤモンド MOS キャパ シタにおける 低界面準位密度 10^11 cm -2eV-1オーダーの実現 (2018)
  • Author(s): 桜井 海匡、松本 翼、 牧野 俊晴、山崎 聡 、Christoph E. Nebel、猪熊 孝夫、徳田 規夫
  • Organizer: 平成30年度(2018年)応用物理学会北陸・信越支部学術講演会
• [Presentation] Non-plasma Anisotropic Diamond Etching with High Rate and Selectivity (2018)
  • Author(s): M. Nagai, K. Nakanishi, T. Tabakoya, H. Kato, T. Makino, S. Yamasaki, T. Matsumoto, T. Inokuma and N. Tokuda
  • Organizer: ACSIN-14 & ICSPM26
  • Int'l Joint Research
• [Presentation] Inversion channel MOSFET on lightly impurity doped n-type diamond (2018)
  • Author(s): T. Matsumoto, H. Kato, T. Makino, S. Ohmagari, M. Ogura, D. Takeuchi, T. Inokuma, S. Yamasaki and N. Tokuda
  • Organizer: ACSIN-14 & ICSPM26
  • Int'l Joint Research
• [Presentation] Conductive-Probe AFM Characterization of Diamond (111) Surfaces with Step-Terrace Structures (2018)
  • Author(s): N. Tokuda, R. Yoshida, M. Nagai, T. Tabakoya, S. Yamasaki, T. Makino, T. Matsumoto and T. Inokuma
  • Organizer: ACSIN-14 & ICSPM26
  • Int'l Joint Research
• [Presentation] 熱化学反応を用いた選択的かつ高速な結晶異方性ダイヤモンドエッチング (2018)
  • Author(s): 長井 雅嗣，松本 翼，猪熊 孝夫, 徳田 規夫
  • Organizer: 第4回有機・無機エレクトロニクスシンポジウム
• [Presentation] Conductive-Probe AFM Characterization of Atomically Well-Defined Diamond (111) Surfaces (2018)
  • Author(s): Norio TOKUDA, Ryo YOSHIDA, Masatsugu NAGAI, Taira TABAKOYA, Tsubasa MATSUMOTO, Takao INOKUMA
  • Organizer: The 12th International New Diamond and Nano Carbons Conference (NDNC 2018)
  • Int'l Joint Research
• [Presentation] 100 kA/cm2 Schottky-pn diodes on freestanding diamond (100) substrate (2018)
  • Author(s): T. Matsumoto, R. Yoshida, T. Yamamoto, T. Teraji, O. Ariyada, H. Kato, S. Yamasaki, T. Inokuma, N. Tokuda
  • Organizer: Hasselt Diamond Workshop 2018
  • Int'l Joint Research
• [Presentation] Inversion channel diamond MOSFET with lightly phosphorus doped body (2018)
  • Author(s): T. Matsumoto, H. Kato, T. Makino, M. Ogura, D. Daisuke, T. Inokuma, N. Tokuda, S. Yamasaki
  • Organizer: Hasselt Diamond Workshop 2018
  • Int'l Joint Research
• [Presentation] 窒素ドープn 層/低抵抗p+-ダイヤモンド(100)CVD 自立基板を用いた ショットキーpn ダイオード (2017)
  • Author(s): 吉田稜、山本貴大、長井雅嗣、松本翼、寺地徳之、有屋田修、加藤宙光、山崎聡、徳田規夫、猪熊孝夫
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] ダイヤモンドMOSFET における反転層確認とFET 動作実証 (2017)
  • Author(s): 松本翼、加藤宙光、牧野俊晴、小倉政彦、竹内大輔、猪熊孝夫、徳田規夫、山崎聡
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] High-Rate and Anisotropic Diamond Etching by Oxidation-Reduction Reaction at NiO/Diamond Interface (2017)
  • Author(s): Masatsugu Nagai, Taira Tabakoya, Tsubasa Matsumoto, Takao Inokuma, Norio Tokuda
  • Organizer: The 8th International Symposium on Surface Science
  • Int'l Joint Research
• [Presentation] ダイヤモンドパワーデバイス開発の最新動向と離陸への課題 (2017)
  • Author(s): 徳田規夫
  • Organizer: 第14回 PDEAパワーデバイスセミナー
  • Invited
• [Remarks] 水蒸気とニッケルを用いた非プラズマプロセスによるダイヤモンドの高速・異方性エッチング技術を開発
  • URL: https://www.kanazawa-u.ac.jp/rd/56469