| Budget Amount *help |
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2020: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2019: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2018: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2017: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Outline of Final Research Achievements |
The goal of this study is to clarify the origin of the piezoelectricity of the piezoelectric thin films and to develop the novel piezoelectric microdevices using high-efficient piezoelectric thin films. PZT and KNN epitaxial thin films were grown on Si substrates by rf-magnetron sputtering and sol-gel method. We examined their crystallographic structural deformation due to the converse piezoelectric effect using XRD measurements of synchrotron radiation. In this study, we successfully observed the electric-field induced structural deformation as a function of Zr/Ti ratio of the epitaxial PZT thin films. In addition, we fabricated flexible PZT thin-film energy harvesters and succeeded in lightening up LEDs by generated electric power.
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