| Project/Area Number |
17H03223
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
原 真二郎 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50374616)
冨岡 克広 北海道大学, 情報科学研究院, 准教授 (60519411)
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| Project Period (FY) |
2017-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2019: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2018: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2017: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
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| Keywords | 半導体ナノワイヤ / 有機金属気相成長 / 選択成長 / 発光ダイオード / 量子ドット / ナノワイヤ / 単一光子光源 |
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| Outline of Final Research Achievements |
We attempted the growth of InGaAs nanowires (NWs) on Si substrates by selective-area metalorganic vapor-phase epitaxy. By controlling the supply ratio of source materials of group III atoms, emission from InGaAs NW arrays in the telecommunication bands were successfully confirmed by the low-temperature photoluminescence measurement. InGaAs NW arrays with a vertical pn junction are also fabricated and photocurrent spectroscopy reveals that fabricated NW array exhibited optical bandgap in the telecommunication bands. Emission mechanism of InP-based light-emitting diode (LED) was investigated and radiative tunneling was the dominant emission mechanism in the NW-LEDs. Control of the emission wavelength and size of InAsP quantum dots embedded in InP NWs were attempted and emission from the telecommunication band was demonstrated. NW-LEDs utilizing InAsP/InP heterostructure NWs were also fabricated and confirmed the light emission in the near-infrared regions originating from InAsP layer.
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| Academic Significance and Societal Importance of the Research Achievements |
シリコン(Si)は集積回路など、応用上最も重要な半導体であるが、今後、高度な情報処理にはSi基板上に様々な光素子・光部品をSiプラットフォーム上でコンパクトに集積することが必要となっている。ここで最大の問題点はSiが発光素子には適していないことであり、よって、Si基板上に発光素子に適した材料の形成が必要である。本研究において、半導体ナノワイヤを利用することにより、発光素子をSi基板上に集積化することが可能になり、また通信波長帯で動作する素子の実現が可能となる。これは、電子回路と光回路とを融合させた集積回路の実現につながり、情報通信技術に進展をもたらす。
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