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Development of MOCVD growth technique for transition metal dichalcogenides and exploring their photonic functionalities

Research Project

Project/Area Number 17H03241
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionNational Institute for Materials Science

Principal Investigator

SAKUMA Yoshiki  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, グループリーダー (60354346)

Co-Investigator(Kenkyū-buntansha) 池沢 道男  筑波大学, 数理物質系, 准教授 (30312797)
Project Period (FY) 2017-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2020: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2019: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2018: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2017: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Keywords遷移金属ダイカルコゲナイド / 層状物質 / MOCVD / 量子閉じ込め / 励起子
Outline of Final Research Achievements

We have developed a unique growth technique based on MOCVD method to synthesize transition metal dichalcogenide monolayers, which are promising new semiconductors in next generation. The potential and functionality of these materials were studied from the viewpoint of photonic applications. We showed that Mo- and W-oxychlorides are appropriate precursors in MOCVD growth, and also found that an alkaline aluminosilicate glass is useful as the growth substrate because it has both high heat resistance and efficient catalytic effect. To explore heterostructures and quantum nanostrucures of TMDC, we realized expanding the material variations of TMDC which can be grown by MOCVD, and succeeded in observing in-plane quantum confinement effect for the first time.

Academic Significance and Societal Importance of the Research Achievements

本研究は、現在急速に関心が高まっている遷移金属ダイカルコゲナイドのMOCVD技術の先導的研究を進めたものである。MOCVDの原料プリカーサの選択や触媒効果を持つ新たなガラス基板に関して独自の研究を展開し、有用な結果と知見を明らかにした。その結果、世界的にも誇れるレベルのMOCVD技術を構築した。また、ヘテロ構造の基盤技術として多種のTMDCの成膜を実現し、面内量子閉じ込めを世界で初めて観測した。これらの研究成果の技術的・学術的価値は極めて高く、材料技術を通じて近未来のスマート社会の構築にも寄与しうるものと考えられる。

Report

(5 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • Research Products

    (21 results)

All 2021 2020 2019 2018 2017

All Journal Article (7 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 7 results,  Open Access: 2 results) Presentation (12 results) (of which Int'l Joint Research: 3 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Two-Dimensional WSe2/MoSe2 Heterostructures Grown by Molecular-Beam Epitaxy2021

    • Author(s)
      Akihiro Ohtake, Yoshiki Sakuma
    • Journal Title

      The Journal of Physical Chemistry C

      Volume: -

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics2021

    • Author(s)
      Li Shisheng、Hong Jinhua、Gao Bo、Lin Yung‐Chang、Lim Hong En、Lu Xueyi、Wu Jing、Liu Song、Tateyama Yoshitaka、Sakuma Yoshiki、Tsukagoshi Kazuhito、Suenaga Kazu、Taniguchi Takaaki
    • Journal Title

      Advanced Science

      Volume: 0 Issue: 11 Pages: 2004438-2004438

    • DOI

      10.1002/advs.202004438

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Effect of Substrate Orientation on MoSe2/GaAs Heteroepitaxy2020

    • Author(s)
      Akihiro Ohtake, Yoshiki Sakuma
    • Journal Title

      The Journal of Physical Chemistry C

      Volume: 124 Issue: 9 Pages: 5196-5203

    • DOI

      10.1021/acs.jpcc.9b11278

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Wafer-scale and deterministic patterned growth of monolayer MoS2 via vapor-liquid-solid method2019

    • Author(s)
      S. Li , Y-C. Lin, X-Y. Liu, Z. Hu, J. Wu, H. Nakajima, S. Liu, T. Okazaki, W. Chen, T. Minari, Y. Sakuma, K. Tsukagoshi , K. Suenaga, T. Taniguchi, M. Osada
    • Journal Title

      Nanoscale

      Volume: 11 Issue: 34 Pages: 16122-16129

    • DOI

      10.1039/c9nr04612g

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Heteroepitaxy of MoSe2 on Si(111) substrates: Role of surface passivation2019

    • Author(s)
      A. Ohtake, Y. Sakuma
    • Journal Title

      Appl. Phys. Lett.

      Volume: 114 Issue: 5

    • DOI

      10.1063/1.5083974

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Atomic Structure and Passivated Nature of the Se-treated GaAs(111)B Surface2018

    • Author(s)
      Akihiro Ohtake, Shunji Goto, Jun Nakamura
    • Journal Title

      SCIENTIFIC REPORTS

      Volume: 8 Issue: 1

    • DOI

      10.1038/s41598-018-19560-2

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Evolution of Surface and Interface Structures in Molecular-Beam Epiaxy of MoSe2 on GaAs(111)A and (111)B2017

    • Author(s)
      Akihiro Ohtake, Yoshiki Sakuma
    • Journal Title

      CRYSTAL GROWTH & DESIGN

      Volume: 17 Issue: 1 Pages: 363-367

    • DOI

      10.1021/acs.cgd.6b01605

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] 孤立した微小な単結晶ドメインから成るWS2単層膜の発光の円偏光度2021

    • Author(s)
      小俣 慶将、松山 享平、Ruoxi Wang、相原 健人、佐久間 芳樹、池沢 道男
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] OSS-CVD for MoS2 Monolayers: A New Approach Utilizing Oxide-Scale Sublimation of Molybdenum2020

    • Author(s)
      楊 旭、池田 直樹、佐久間 芳樹
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 真空中でのUV 光照射による単層WS2 の発光増大効果2020

    • Author(s)
      松山 享平, 佐久間 芳樹, 池沢 道男
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Impact of Glass Substrates on MoS2 Monolayers Grown by Novel Oxychloride CVD2019

    • Author(s)
      SAKUMA Yoshiki, LI Shisheng, IKEDA Naoki, OHTAKE Akihiro
    • Organizer
      The 11th annual Recent Progress in Graphene and Two-dimensional Materials Research Conference
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Heteroepitaxy of MoSe2 on GaSe-terminated Si(111)2019

    • Author(s)
      OHTAKE Akihiro, SAKUMA Yoshiki
    • Organizer
      The 11th annual Recent Progress in Graphene and Two-dimensional Materials Research Conference
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] ガス原料CVDを用いたTMDC単層膜成長におけるガラス基板の効果2019

    • Author(s)
      佐久間 芳樹, 李 世勝, 池田 直樹, 大竹 晃浩
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] MoSe2/GaAsヘテロエピタキシーにおける基板面方位依存性2019

    • Author(s)
      大竹 晃浩, 佐久間 芳樹
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] チューナブルなファブリー・ペロー型光共振器中の二次元半導体の光スペクトル2019

    • Author(s)
      片平博夫、久保直人、寺平成希、佐久間芳樹、池沢道男
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] WOCl4をプリカーサに用いたWS2単層膜のガス原料CVD2018

    • Author(s)
      佐久間芳樹、池田直樹、大竹晃浩、間野高明
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Scalable growth of high-quality MoS2 and WS2 atomic layers using oxychloride sources in MOCVD reactor2018

    • Author(s)
      Y. Sakuma, N. Ikeda, T. Mano, A. Ohtake
    • Organizer
      ICMOVPE-XIX
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Se 処理されたGaAs(111)B 表面の構造安定性2018

    • Author(s)
      後藤俊治、大竹晃浩、赤石暁、中村淳
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Se処理GaAs(111)B表面の安定化機構2017

    • Author(s)
      大竹 晃浩, 後藤俊治, 中村淳
    • Organizer
      第78回応用物理学会秋期学術講演会
    • Related Report
      2017 Annual Research Report
  • [Patent(Industrial Property Rights)] 遷移金属カルコゲナイド層状膜の形成方法およびそのための装置2020

    • Inventor(s)
      佐久間 芳樹
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Industrial Property Rights Type
      特許
    • Filing Date
      2020
    • Related Report
      2020 Annual Research Report
  • [Patent(Industrial Property Rights)] 酸化モリブデンの成膜方法およびそのための装置2020

    • Inventor(s)
      佐久間 芳樹
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Industrial Property Rights Type
      特許
    • Filing Date
      2020
    • Related Report
      2020 Annual Research Report

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Published: 2017-04-28   Modified: 2022-01-27  

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