| Project/Area Number |
17H03247
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2017-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2019: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2018: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2017: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
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| Keywords | トランジスタレーザ / 半導体レーザ / InP / 光デバイス / 光回路 / 半導体 / フォトニックネットワーク |
|---|
| Outline of Final Research Achievements |
In order to meet the demand for a direct modulation laser for short-to-medium distance optical communication, we aimed to establish a method to control the optical output, oscillation spectrum, and modulation band of a 1.3 micrometer-band transistor laser.
First of all, we have realized a theoretical calculation that agrees with complicated characteristic measurement data. By utilizing this theoretical calculation, the design guideline of the transistor laser was clarified .
Next, in the actual fabrication, we proposed a new electrode structure with the goal of improving the electric band and heat dissipation characteristics, and realized a device that operates at 95 degrees, which is the highest oscillation temperature in the world, with the transistor laser. We also succeeded in obtaining stable small signal characteristics.
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| Academic Significance and Societal Importance of the Research Achievements |
インターネットを中心とする光ネットワークの高速化、かつ低コスト化の要求に見合う半導体レーザを実現するための重要なステップになるとともに、本トランジスタレーザの理論解析は、将来の他の半導体レーザ理論検討にも適応できる学術的意義があるといえる。
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