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Fabrication of low-loss diamond power FET using giant poralization of ferroelectrics

Research Project

Project/Area Number 17H03248
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionKanazawa University

Principal Investigator

KAWAE TAKESHI  金沢大学, 電子情報通信学系, 准教授 (30401897)

Co-Investigator(Kenkyū-buntansha) 徳田 規夫  金沢大学, ナノマテリアル研究所, 教授 (80462860)
Project Period (FY) 2017-04-01 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2019: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2018: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2017: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Keywords電界効果トランジスタ / ワイドギャップ半導体 / パワーデバイス / ダイヤモンド / 強誘電体 / Pb(Zr,Ti)O3 / キャリアオフセット
Outline of Final Research Achievements

In this study, for wide-gap semiconductor diamond, we proposed the creation of field-effect transistor structure with a ferroelectric gate (FeFET), and investigated its superiority to conventional power devices.
We have demonstrated a current ON/OFF ratio of 10E+8 of diamond channel due to the modulation of huge amount of carrier by applying the gate voltage. In addition, about the pseudo normally-off operation of diamond FeFET using the remnant polarization of the ferroelectric gate, it has been demonstrated that the off-state can be maintained for up to 70 hours.
The above results indicate the new operating principle of a power FET realized by a ferroelectric gate, and are considered to contribute to the development of power devices using this structure in the future.

Academic Significance and Societal Importance of the Research Achievements

限りあるエネルギー資源の有効活用に資する新しい電子デバイスとして、強誘電体をゲートとした電界効果トランジスタを提案し、従来パワーデバイスに対する有用性を検証した。
新しいデバイス構造を用いる事で非常に大きな電流のオン・オフ制御が可能である事を実証した。また、新しい構造では余計な電力を必要とせずに電流オフ状態(待機状態)を維持する事も実証された。
以上の結果より、全世界的に求められている省エネ社会の実現に向け、本研究が明らかにした新たなデバイス構造は学術的成果のみならず人類社会の発展に大きく貢献するものである。

Report

(4 results)
  • 2019 Annual Research Report   Final Research Report ( PDF )
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • Research Products

    (13 results)

All 2020 2019 2018 2017

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (10 results) (of which Int'l Joint Research: 3 results,  Invited: 3 results)

  • [Journal Article] Influence of rapid thermal annealing at varied temperatures on conductivity activation energy and structural properties of Si-doped β-Ga2O3 film grown by pulsed laser deposition2019

    • Author(s)
      Antoro Iwan Dwi、Itoh Satoshi、Yamada Satoru、Kawae Takeshi
    • Journal Title

      Ceramics International

      Volume: 45 Issue: 1 Pages: 747-751

    • DOI

      10.1016/j.ceramint.2018.09.240

    • Related Report
      2019 Annual Research Report 2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by mist chemical vapor deposition2018

    • Author(s)
      NAKABAYASHI Yuji、YAMADA Satoru、ITOH Satoshi、KAWAE Takeshi
    • Journal Title

      Journal of the Ceramic Society of Japan

      Volume: 126 Issue: 11 Pages: 925-930

    • DOI

      10.2109/jcersj2.18082

    • ISSN
      1348-6535, 1882-0743
    • Year and Date
      2018-11-01
    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] B-doped diamond field effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene gate insulator2017

    • Author(s)
      Ryota Karaya, Ikki Baba, Yosuke Mori, Tsubasa Matsumoto, Takashi Nakajima, Norio Tokuda and Takeshi Kawae
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Issue: 10S Pages: 10PF06-10PF06

    • DOI

      10.7567/jjap.56.10pf06

    • NAID

      210000148383

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] ダイヤモンドFeFETに対する残留分極を用いた疑似ノーマリオフ動作に関する検証2020

    • Author(s)
      玉村達哉、山田 樹、松本 翼、中嶋宇史、徳田規夫、川江 健
    • Organizer
      第67回 応用物理学会 春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Inspection of pseudo normally-off operation of ferroelectric gate diamond FET with partially O-terminated channel structure2019

    • Author(s)
      Takeshi Kawae
    • Organizer
      11th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 部分O終端構造化ダイヤモンド表面伝導層をチャネルとした強誘電体ゲートFETの作製2019

    • Author(s)
      玉村達哉、中嶋宇史、松本翼、徳田規夫、川江 健
    • Organizer
      第36回 強誘電体応用会議
    • Related Report
      2019 Annual Research Report
  • [Presentation] 部分O終端チャネルを用いたダイヤモンドFeFETの疑似ノーマリオフ動作化に関する検討2019

    • Author(s)
      玉村達哉、山田 樹、高橋和暉、中嶋宇史、松本翼、徳田規夫、川江 健
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 強誘電体をゲートとした酸化物TFTの開発と将来構想~ワイドギャップ半導体から高温超伝導体まで2018

    • Author(s)
      川江 健
    • Organizer
      超伝導ウィンターセミナーSIS2018
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] 強誘電体の残留分極を用いたダイヤモンド表面伝導層の空乏化に関する検証2018

    • Author(s)
      庄司駿輔、玉村達哉、中嶋宇史、松本翼、徳田規夫、川江 健
    • Organizer
      第79回 応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] P(VDF-TrFE)をゲート絶縁膜としたBドープダイヤモンドFETの開発2018

    • Author(s)
      庄司駿輔、森 陽介、松本翼、中嶋宇史、小倉政彦、徳田規夫、川江 健
    • Organizer
      第6回 強的秩序とその操作に関わる研究グループ研究会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Diamond field effect transistor with ferroelectric gate structure2017

    • Author(s)
      Takeshi Kawae
    • Organizer
      Collaborative Conference on Materials Research
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Fabrication of H-terminated diamond MISFET with Al2O3 as buffer layer2017

    • Author(s)
      S. Shoji, H. Furuichi, and T. Kawae
    • Organizer
      6th Internationalt Symposium on Organic and Inorganica Electric Materials and Related Nanotechnology
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] P(VDF-TrFE)をゲートとしたボロンドープダイヤモンドFET2017

    • Author(s)
      森 陽介、柄谷涼太、馬場一気、吉田稜、中嶋宇史、松本翼、徳田規夫、川江 健
    • Organizer
      第34回 強誘電体応用会議
    • Related Report
      2017 Annual Research Report

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Published: 2017-04-28   Modified: 2021-02-19  

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