| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2019: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2018: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Outline of Final Research Achievements |
An atomic level flat step terrace structure is required on the surface of the crystal substrate used for film growth. For the construction of this structure, a heat treatment method using surface diffusion on the substrate surface is often used. However, by performing the heat treatment, point defects having a concentration equilibrium with the heat treatment temperature are formed on the outermost surface portion of the substrate, and the atom density of the outermost surface portion may decrease. In this study, we collected basic knowledge about adjustment of oxygen partial pressure during heat treatment and use of ultrapure water as a method to alleviate this decrease in atomic density as much as possible. We also worked on the effect of electric field application as a method of changing the state of the substrate surface.
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