| Budget Amount *help |
¥25,220,000 (Direct Cost: ¥19,400,000、Indirect Cost: ¥5,820,000)
Fiscal Year 2019: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2018: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
Fiscal Year 2017: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
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| Outline of Final Research Achievements |
A quantitative method to characterize GaN crystals, which are widely utilized as light-emitting diodes and power transistors. In particular, the concentration of point defects in crystals are quantified with quantum efficiency of radiation (QE) , which is measured by omnidirectional photoluminescence (ODPL) spectroscopy. The relationship between QE and photoluminescence lifetime is also clarified, and estimation for the concentration of impurities is carried out.
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