| Budget Amount *help |
¥24,310,000 (Direct Cost: ¥18,700,000、Indirect Cost: ¥5,610,000)
Fiscal Year 2019: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2018: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2017: ¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
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| Outline of Final Research Achievements |
In this research, toward the creation of metal-oxide-semiconductor field-effect transistors (MOSFETs) using germanium-tin narrow wires, basic technologies required for the device fabrication were investigated: (1) Crystal growth of germanium-tin narrow wires on Si wafers covered with an insulating film and its evaluation of the electronic properties, (2) Heavy n-type doping, and (3) Demonstrations of device fabrications such as MOSFETs and thermoelectric generators. Through the research, we have obtained dependences of the Sn content and solidification rate on the electronic and thermophysical properties of the germanium-tin binary alloys.
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