| Budget Amount *help |
¥24,050,000 (Direct Cost: ¥18,500,000、Indirect Cost: ¥5,550,000)
Fiscal Year 2019: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2018: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2017: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
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| Outline of Final Research Achievements |
Si nanopillar arrays were obtained by liquid-Si nanoimprint. The nanopillars with gold electrodes deposited on the top had light absorption in the near-infrared region due to localized surface plasmon resonance. The absorbed photons were taken out as photocurrent. This light sensor required high accuracy in the dimensions of the pillars. High temperature annealing (400 C) is generally required for liquid-to-solid Si conversion. This annealing causes thermal expansion, which reduces the accuracy of the pillar dimensions and position. We investigated the liquid-to-solid Si conversion mechanism, and clarified that the conversion can be induced by electron beam irradiation instead of annealing. This result provided a technology for manufacturing well-defined nanostructures of semiconducting Si without heating/vacuuming. We enhanced the design accuracy of the nanopillar and realized to the improvement of the device quality.
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