| Budget Amount *help |
¥24,310,000 (Direct Cost: ¥18,700,000、Indirect Cost: ¥5,610,000)
Fiscal Year 2019: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2018: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2017: ¥15,470,000 (Direct Cost: ¥11,900,000、Indirect Cost: ¥3,570,000)
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| Outline of Final Research Achievements |
To obtain high-quality SiC crystals by solution growth, precise CFD simulations using reliable thermophysical properties as well as clarification of important factors for crystal growth are needed. Therefore, thermal conductivity of the solvents and the other various properties were evaluated. For example, the obtained thermal conductivities of molten Si-Cr and Si-Fe alloys were much smaller than those of molten Si. From the solution growth experiments using Si and Si-Cr solvents, the lateral SiC growth was conserved in the case of alloy solvents. By considering the CFD results, the increase of temperature gradient in front of growth interface leads to the decrease of constitutional supercooling area, resulting in maintaining the lateral growth.
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