| Project/Area Number |
17H06511
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Nanostructural physics
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| Research Institution | Tohoku University |
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Principal Investigator |
DUTTAGUPTA SAMIK 東北大学, スピントロニクス学術連携研究教育センター, 助教 (30807657)
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| Project Period (FY) |
2017-08-25 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2018: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | Antiferromagnet / Neuromorphic Computing / Spin-orbit interactions / spin-orbit torque / SMR / Neuromorphic computation / domain wall motion / spin orbit torque / Dzyaloshinskii Moriya / antiferromagnet / スピンエレクトロニクス |
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| Outline of Final Research Achievements |
The current research project deals with the utilization of antiferromagnet-based heterostructures for next generation non-volatile and neuromorphic computing architectures. The first part of the project clarified the role of spin-orbit interactions in antiferromagnet (AFM)/ferromagnet heterostructures which is considered to be a promising building block for future spintronic devices. The obtained information provides crucial insights for design of device structure using AFM/FM. The second part of the project takes a further step ahead towards the realization of pure AFM based spintronic architectures for antiferromagnetic spintronics. We have demonstrated electrical reading and writing of a metallic AFM by spin-orbit torques originating from the injection of current in an adjacent non-magnet layer with strong spin-orbit interactions. The obtained results offer an unexplored pathway for the development of next generation spintronic devices utilizing antiferromagnetic materials.
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| Academic Significance and Societal Importance of the Research Achievements |
Quantification of spin-orbit interactions (SOI) in antiferromagnet (AFM)/ferromagnet (FM) enables quantification of physics concerning SOIs and provides insights for design of AFM/FM device. Demonstration of electrical control of AFM-based structures initiates new directions in AFM spintronics.
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