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Cr-Ge-Te系層状物質の高速相変化機構の解明及び不揮発性メモリへの応用

Research Project

Project/Area Number 17J02967
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Structural/Functional materials
Research InstitutionTohoku University

Principal Investigator

畑山 祥吾  東北大学, 工学研究科, 特別研究員(DC1)

Project Period (FY) 2017-04-26 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 2019: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2018: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2017: ¥900,000 (Direct Cost: ¥900,000)
Keywords相変化メモリ / 相変化材料 / カルコゲナイド / アモルファス / 遷移金属
Outline of Annual Research Achievements

本研究の目的は、CrGTの高速相変化機構の解明および不揮発性メモリへの応用である。本年度は、以下の知見を得た。
初めにEXAFSとHAXPESを用いて局所構造の観点からCrGTの相変化機構を調査した。その結果、CrGTは結晶化直後にアモルファス相と局所構造の類似した準安定相が出現し、その後、Crが僅かに移動するだけで安定相に変化することを突き止めた。これは、CrGTの高速相変化が相同士の局所構造類似性によってもたらされていることを示唆している。加えて、相変化による結合状態変化を調査し、結晶CrGTのキャリア生成起源がCr空孔であることも突き止め、準安定相から安定相へと変化する過程でCr空孔が徐々に減少し高抵抗化していることを明らかにした。このようなアモルファス相から安定相へと変化する過程で生じる高抵抗化は価電子端近傍のスペクトルにも明確に反映されることが分かった。アモルファス相では価電子端近傍に位置していたフェルミ準位が、安定相へと変化するにつれてバンドギャップ中に入り込み、最終的にはバンドギャップの殆ど中央付近に位置するため高抵抗になることを明らかにした。
上記に加えてCrGTデバイスの動作特性を調査し、2000回を上回る繰り返し書き換え性能を実証した。また、デバイスを微細化させていくとCrGTは急激な動作エネルギーの低減を示し、実製品レベルまで微細化した際には実用材GSTよりも98%以上低いエネルギーで動作可能であることが分かった。

Research Progress Status

令和元年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

令和元年度が最終年度であるため、記入しない。

Report

(3 results)
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • Research Products

    (34 results)

All 2019 2018 2017 Other

All Int'l Joint Research (3 results) Journal Article (6 results) (of which Int'l Joint Research: 3 results,  Peer Reviewed: 6 results,  Open Access: 2 results) Presentation (24 results) (of which Int'l Joint Research: 10 results,  Invited: 6 results) Remarks (1 results)

  • [Int'l Joint Research] Hanyang University(韓国)

    • Related Report
      2019 Annual Research Report
  • [Int'l Joint Research] Hanyang University(韓国)

    • Related Report
      2018 Annual Research Report
  • [Int'l Joint Research] Hanyang University(韓国)

    • Related Report
      2017 Annual Research Report
  • [Journal Article] Relation between density and optical contrasts upon crystallization in Cr2Ge2Te6 phase-change material: Coexistence of a positive optical contrast and a negative density contrast2019

    • Author(s)
      S. Hatayama, D. Ando, Y. Sutou
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 52 Issue: 32 Pages: 325111-325111

    • DOI

      10.1088/1361-6463/ab233f

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Cr-Triggered Local Structural Change in Cr2Ge2Te6 Phase Change Material2019

    • Author(s)
      S. Hatayama, Y. Shuang, P. Fons, Y. Saito, A.V. Kolobov, K. Kobayashi, S. Shindo, D. Ando, Y. Sutou
    • Journal Title

      ACS Applied Materials and Interfaces

      Volume: 11 Issue: 46 Pages: 43320-43329

    • DOI

      10.1021/acsami.9b11535

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Electrical transport mechanism of the amorphous phase in Cr2Ge2Te6 phase change material2019

    • Author(s)
      S. Hatayama, Y. Sutou, D. Ando, J. Koike and K. Kobayashi
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 52 Issue: 10 Pages: 105103-105109

    • DOI

      10.1088/1361-6463/aafa94

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Crystallization mechanism and kinetics of Cr2Ge2Te6 phase change material2018

    • Author(s)
      S. Hatayama, Y. Sutou, D. Ando, J. Koike
    • Journal Title

      MRS Communications

      Volume: 8 Issue: 3 Pages: 1167-1172

    • DOI

      10.1557/mrc.2018.176

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change2018

    • Author(s)
      Y. Shuang, Y. Sutou, S. Hatayama, S. Shindo, Y.-H. Song, D. Ando and J. Koike
    • Journal Title

      Applied Physics Letters

      Volume: 112 Issue: 18 Pages: 183504-183508

    • DOI

      10.1063/1.5029327

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization2018

    • Author(s)
      Shogo Hatayama, Yuji Sutou, Satoshi Shindo, Yuta Saito, Yun-Heub Song, Daisuke Ando, and Junichi Koike
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Issue: 3 Pages: 2725-2734

    • DOI

      10.1021/acsami.7b16755

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Presentation] Inverse Resistance Change PCRAM with Cr2Ge2Te62019

    • Author(s)
      Shogo Hatayama and Yuji Sutou
    • Organizer
      The Future of Materials Engineering - Dramatic Innovation to the next 100 years
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Conduction mechanism of sputtered amorphous Cr2Ge2Te6 film2019

    • Author(s)
      Shogo Hatayama, Daisuke Ando, Keisuke Kobayashi and Yuji Sutou
    • Organizer
      European Phase-Change and Ovonic Symposium 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 逆抵抗変化型Cr2Ge2Te6相変化材料のメモリ特性2019

    • Author(s)
      畑山祥吾, 安藤大輔, 須藤祐司
    • Organizer
      日本金属学会 第165回秋期講演大会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Local Structural Change in Cr2Ge2Te6 Phase Change Material, Inducing Abnormal Phase Change Behavior2019

    • Author(s)
      Shogo Hatayama, Yi Shuang, Paul Fons, Yuta Saito, Alexander V. Kolobov, Keisuke Kobayashi, Satoshi Shindo, Daisuke Ando and Yuji Sutou
    • Organizer
      The Symposium on Phase Change Oriented Science 2019
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] スパッタ法により成膜したCr-Ge-Te化合物薄膜の相変化挙動2019

    • Author(s)
      畑山祥吾, 安藤大輔, 須藤祐司
    • Organizer
      日本材料科学会 第26回若手研究者討論会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 逆抵抗変化型Cr2Ge2Te6相変化材料の局所構造変化2019

    • Author(s)
      畑山祥吾, イ・シュアン, フォンス・ポール, 齊藤雄太, コロボフ・アレキサンダー, 小林啓介, 進藤怜史, 安藤大輔, 須藤祐司
    • Organizer
      日本金属学会 第166回秋期講演大会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 不揮発性メモリ用Cr2Ge2Te6相変化材料の局所構造の解明2019

    • Author(s)
      畑山祥吾, シュアン・イ, フォンス・ポール, 齊藤雄太, コロボフ・アレキサンダー, 小林啓介, 進藤怜史, 安藤大輔, 須藤祐司
    • Organizer
      応用物理学会 第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 相変化メモリ(PCRAM)の省エネルギー化に向けた材料開発2019

    • Author(s)
      須藤祐司, 畑山祥吾
    • Organizer
      応用物理学会 第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] 低抵抗アモルファスCr2Ge2Te6の電気伝導機構2019

    • Author(s)
      畑山祥吾, 須藤祐司, 安藤大輔, 小池淳一, 小林啓介
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] アモルファスCr2Ge2Te6相変化材料の電気伝導機構2019

    • Author(s)
      畑山祥吾, 須藤祐司, 安藤大輔, 小池淳一, 小林啓介
    • Organizer
      第164回金属学会春期講演大会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Inverse Resistance Change PCRAM with Cr2Ge2Te6 Phase Change Material2018

    • Author(s)
      S. Hatayama, Y. Sutou, S. Shindo, Y.-H. Song,
    • Organizer
      MRS 2018 Spring meetig
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Nitrogen-Doped Cr-Ge-Te Films for Phase Change Random Access Memory2018

    • Author(s)
      Y. Shuang, S. Hatayama, S. Shindo, D. Ando, Y. Sutou and J. Koike
    • Organizer
      MRS 2018 Spring meetig
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Phase Change Characteristics of TM-Ge-Te (TM: Cu and Cr)2018

    • Author(s)
      Y. Sutou, S. Shindo, S. Hatayama, Y. Shuang, J. Koike and Y. Saito
    • Organizer
      MRS 2018 Spring meetig
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 逆抵抗変化Cr2Ge2Te6相変化材料の結晶化メカニズム2018

    • Author(s)
      畑山祥吾, 須藤祐司, 安藤大輔, 小池淳一, 齊藤雄太, 進藤怜史, ユン ヘブ ソン
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Crystallization Kinetics of Inverse Resistance Change Cr2Ge2Te62018

    • Author(s)
      S. Hatayama, Y. Sutou, D. Ando and J. Koike
    • Organizer
      European Phase-Change and Ovonic Symposium 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Phase Change Behavior of Non-bulk Resistance Change N-doped Cr2Ge2Te6 Phase Change material2018

    • Author(s)
      Y. Shuang, S. Hatayama, Y. Sutou, D. Ando, J. Koike, H. Tanimura and T. Ichitsubo
    • Organizer
      European Phase-Change and Ovonic Symposium 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 低抵抗アモルファス相と高抵抗結晶相を有するCr2Ge2Te6を用いた相変化メモリ2018

    • Author(s)
      畑山祥吾, 須藤祐司, 安藤大輔, 小池淳一
    • Organizer
      シリコン材料・デバイス研究会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Non-isothermal crystallization kinetics of amorphous Cr2Ge2Te6 film2018

    • Author(s)
      S. Hatayama, Y. Sutou, D. Ando and J. Koike
    • Organizer
      Symposium on Phase Change Oriented Science 2018
    • Related Report
      2018 Annual Research Report
  • [Presentation] Cr2Ge2Te6を用いた相変化メモリの動作特性2018

    • Author(s)
      畑山祥吾、須藤祐司、安藤大輔、小池淳一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Inverse resistance switching behavior of Cr2Ge2Te6-based PCRAM2017

    • Author(s)
      Shogo Hatayama, Yuji Sutou, Satoshi Shindo, Yuta Saito, Yun-Heub Song, Daisuke Ando and Juncihi Koike
    • Organizer
      The 29th Symposium on Phase Change Oriented Science (PCOS2017)
    • Related Report
      2017 Annual Research Report
  • [Presentation] Inverse resistance change behavior of Cr2Ge2Te6 phase change material2017

    • Author(s)
      Shogo Hatayama, Yuji Sutou, Satoshi Shindo, Yuta Saito, Yun-Heub Song, Daisuke Ando and Junichi Koike
    • Organizer
      European Phase Change and Ovonic Symposium 2017 (EPCOS2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Phase Change Behavior of N-doped Cr-Ge-Te Film2017

    • Author(s)
      Yi Shuang, Shogo Hatayama, Satoshi Shindo, Daisuke Ando, Yuji Sutou, Junichi Koike
    • Organizer
      European Phase Change and Ovonic Symposium 2017 (EPCOS2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effects of Nitrogen doping on the properties of Cr-Ge-Te ternary compound film2017

    • Author(s)
      Yi Shuang, Shogo Hatayama, Satoshi Shindo, Daisuke Ando, Yuji Sutou, Junichi Koike
    • Organizer
      The 29th Symposium on Phase Change Oriented Science (PCOS2017)
    • Related Report
      2017 Annual Research Report
  • [Presentation] Transition Metal-Ge-Te Chalcogenides for PCRAM Material2017

    • Author(s)
      Y. Sutou, S. Shindo, S. Hatayama, Y. Saito, J. Koike
    • Organizer
      Solid State Devices and Materials (SSDM2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Remarks] 次世代相変化メモリーの新材料を開発 超低消費電力でのデータ書き込みが可能に

    • URL

      http://www.tohoku.ac.jp/japanese/2018/01/press20180112-03.html

    • Related Report
      2017 Annual Research Report

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Published: 2017-05-25   Modified: 2024-03-26  

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