• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

任意の特性を発現する新規ハフニア基強誘電体の創生

Research Project

Project/Area Number 17J10208
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Inorganic materials/Physical properties
Research InstitutionTokyo Institute of Technology

Principal Investigator

三村 和仙  東京工業大学, 物質理工学院, 特別研究員(DC1)

Project Period (FY) 2017-04-26 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 2019: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2018: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2017: ¥1,000,000 (Direct Cost: ¥1,000,000)
Keywordsハフニア基強誘電体 / エピタキシャル膜 / キュリー点 / スパッタリング法 / 室温成膜 / 抗電界の膜厚依存性 / 強誘電体 / エピタキシャル薄膜 / ハフニア
Outline of Annual Research Achievements

これまで、HfO2基強誘電体の特性を制御するためにカチオン(Y, Zr, Ta)やアニオン(N)を置換した膜を作成したが、強誘電相である直方晶相を作成することが非常に困難であった。そこで、製膜時の大きな運動エネルギーにより非平衡相を生成することが確認されているスパッタリング法を用いて、HfO2基膜の結晶構造の制御を行った。本研究ではRFマグネトロンスパッタを用いて、YSZ111およびITO/YSZ111基板上にエピタキシャル成長した7%のYをドープしたHfO2膜(YHO7)を室温で成膜した。成膜時のRFパワー(10~150W)や雰囲気(ArやO2)を変化させることで、結晶構造を正方晶相、直方晶相、単射晶相に制御することに成功した。これらの結果は他の組成においても応用できる可能性があり、今後他組成でも安定して直方晶相を生成させ、元素置換による材料の特性変化を系統的に調査することが可能であると考えられる。また、スパッタ法を用いることで、室温で強誘電性を有する膜の作製に成功した。この結果は耐熱性の低いガラス基板上や有機フレキシブル基板上での膜作成が可能であり、ウェアラブルデバイスへの応用など新たな応用展開に期待ができる結果である。
また、膜厚や組成(YHO7とHf0.5Zr0.5O2)によるキュリー点の変化を観察した。キュリー点は強誘電性が失われる温度であり、温度安定性の観点から重要である。YHO7膜の場合、膜厚の低下はキュリー点の低下につながった。これは表面エネルギー効果により、直方晶相の高温の正方晶相の安定性が高くなったと推測される。一方で約5 nmの膜厚でも昇温時のキュリー点は350℃以上であり、HfO2基強誘電体がどの膜厚範囲においても高い温度安定性を有することを見出した。また、組成をYドープからZrドープに変化させることにより、キュリー点を150℃上げることに成功した。

Research Progress Status

令和元年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

令和元年度が最終年度であるため、記入しない。

Report

(3 results)
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • Research Products

    (23 results)

All 2020 2019 2018 2017

All Journal Article (8 results) (of which Peer Reviewed: 8 results) Presentation (13 results) (of which Int'l Joint Research: 8 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method2020

    • Author(s)
      Takanor Mimura, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo
    • Journal Title

      Applied Physics Letters

      Volume: 116 Issue: 6 Pages: 062901-062901

    • DOI

      10.1063/1.5140612

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Thickness- and orientation- dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films2020

    • Author(s)
      Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SG Pages: SGGB04-SGGB04

    • DOI

      10.35848/1347-4065/ab6d84

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ferroelectricity in YO1.5-HfO2 films around 1μm in thickness2019

    • Author(s)
      Takanori Mimura, Takao Shimizu, Hiroshi Funakubo
    • Journal Title

      Applied Physics Letters

      Volume: 115 Issue: 3 Pages: 032901-032901

    • DOI

      10.1063/1.5097880

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of heat treatment and in-situ high temperature XRD study on the formation of ferroelectric epitaxial Y doped HfO2 film2019

    • Author(s)
      Takanori Mimura, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Yoshio Katsuya, Osami Sakata, and Hiroshi Funakubo
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SB Pages: SBBB09-SBBB09

    • DOI

      10.7567/1347-4065/aafed1

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films2018

    • Author(s)
      Takanori Mimura, Takao Shimizu, Hiroshi Uchida, Osami Sakata, and Hiroshi Funakubo
    • Journal Title

      Appl. Phys. Lett.

      Volume: 113 Issue: 10 Pages: 102901-102901

    • DOI

      10.1063/1.5040018

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering2018

    • Author(s)
      Taisei Suzuki, Takao Shimizu, Takanori Mimura, Hiroshi Uchida, and Hiroshi Funakubo
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 11S Pages: 11UF15-11UF15

    • DOI

      10.7567/jjap.57.11uf15

    • NAID

      210000149824

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films2018

    • Author(s)
      Takao Shimizu, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko Konno, Yoshio Katsuya, Osami Sakata, and Hiroshi Funakubo
    • Journal Title

      Appl. Phys. Lett.

      Volume: 113 Issue: 21 Pages: 212901-212901

    • DOI

      10.1063/1.5055258

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dynamic observation of ferroelectric domain switching using scanning nonlinear dielectric microscopy2017

    • Author(s)
      Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Issue: 10S Pages: 10PF16-10PF16

    • DOI

      10.7567/jjap.56.10pf16

    • NAID

      210000148393

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] エピタキシャルHfO2基膜を用いた直方晶相安定化の調査2020

    • Author(s)
      三村和仙、清水荘雄、舟窪浩
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Thickness-dependent crystal structure of epitaxial ferroelectric 0.07YO1.5-0.93HfO2 and HZO films2019

    • Author(s)
      Takanori Mimura、Takao Shimizu、Hiroshi Funakubo
    • Organizer
      ISIF 2019 (7th International Symposium on Integrated Functionalities)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Thickness- and orientation dependence of Curie temperature of ferroelectric epitaxial HfO2 based films2019

    • Author(s)
      Takanori Mimura、 Takao Shimizu、 Yoshio Katsuya、 Osami Sakata、 Hiroshi Funakubo
    • Organizer
      SSDM 2019 (International Conference on Solid State Devices and materials)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Stability of ferroelectric orthorhombic phase in epitaxial HfO2-based films2019

    • Author(s)
      Takanori Mimura、Takao Shimizu、Hiroshi Funakubo
    • Organizer
      19th US-Japan Seminar on Dielectric and Piezoelectric Ceramics
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] スパッタリング法を用いた Y:HfO2強誘電体膜の室温成膜2019

    • Author(s)
      三村和仙、清水荘雄、舟窪浩
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Thickness- and orientation-dependence of Curie temperature of ferroelectric epitaxial HfO2 based films2019

    • Author(s)
      Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, and Hiroshi Funakubo
    • Organizer
      2019 International Conference on Solid State Devices and Materials (SSDM 2019)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Temperature Stability of Ferroelectric Phase of Epitaxial Y-doped HfO2 Films2018

    • Author(s)
      T. Mimura, T. Shimizu, T. Kiguchi, A. Akama, T. J. Konno, Y. Katsuya, O. Sakata, and H. Funakubo
    • Organizer
      IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effects of heat treatment and in situ high temperature XRD study on the formation of ferroelectric epitaxial HfO2 based film2018

    • Author(s)
      Takanori Mimura, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Yoshio Katsuya, Osami Sakata, and Hiroshi Funakubo
    • Organizer
      2018 International Conference on Solid State Devices and Materials (SSDM 2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] エピタキシャル成長したHfO2 基強誘電体膜における結晶構造の膜厚依存性2018

    • Author(s)
      三村和仙、清水荘雄、木口賢紀、赤間章裕、今野豊彦、勝矢良雄、坂田修身、舟窪浩
    • Organizer
      日本セラミックス協会 2018年年会
    • Related Report
      2018 Annual Research Report 2017 Annual Research Report
  • [Presentation] エピタキシャルHfO2基強誘電体における強誘電特性の膜厚依存性2018

    • Author(s)
      三村和仙、清水荘雄、勝矢良雄、坂田修身、舟窪浩
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report 2017 Annual Research Report
  • [Presentation] Stability of Ferroelectric Phase in Epitaxial HfO2-based Films2017

    • Author(s)
      Takanori Mimura, Kiriha Katayama, Takao Shimizu, Takanori Kiguchi, Akihiko Akama, Toyohiko J. Konno, Osami Sakata, and Hiroshi Funakubo
    • Organizer
      2017 Joint IEEE ISAF-IWATMD-PFM Conference
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Thickness-dependent phase stability of epitaxial ferroelectric HfO2-based films2017

    • Author(s)
      Takanori Mimura, Kiriha Katayama, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, and Hiroshi Funakubo
    • Organizer
      STAC-10 (The Tenth International Conference on the Science and Technology for Advanced Ceramics)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Y2O3-HfO2強誘電体の温度安定性2017

    • Author(s)
      三村和仙、清水荘雄、木口賢紀、赤間章裕、今野豊彦、勝矢良雄、坂田修身、舟窪浩
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Patent(Industrial Property Rights)] 強誘電性薄膜の製造方法、強誘電性薄膜、及びその用途2019

    • Inventor(s)
      舟窪浩、清水荘雄、三村和仙、中村美子
    • Industrial Property Rights Holder
      舟窪浩、清水荘雄、三村和仙、中村美子
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Related Report
      2019 Annual Research Report
  • [Patent(Industrial Property Rights)] 圧電体の製造方法、圧電体、及び圧電体素子又は装置2019

    • Inventor(s)
      舟窪浩、清水荘雄、三村和仙、中村美子
    • Industrial Property Rights Holder
      舟窪浩、清水荘雄、三村和仙、中村美子
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Related Report
      2019 Annual Research Report

URL: 

Published: 2017-05-25   Modified: 2024-03-26  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi