| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2019: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2018: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2017: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
In order to improve radiation intensity characteristics of high temperature superconducting THz emitters based on single crystals of Bi2Sr2CaCu2O8+d(Bi2212), we have developed emitting device structures from following four points. These developments are (1) device structures with reproducible emitting characteristics, (2) fabrication techniques of Bi2212 mesa structures, (3) an analytical method of device temperature distributions, and (4) mesa array device structures. Although we need additional improvement of the device structures in order to obtain higher radiation intensity, our development obtained here enables us to get good reproducible device characteristics and gives us a guide to the future development.
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