| Project/Area Number |
17K06101
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | National Institute of Technology, Toyama College |
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Principal Investigator |
Asaji Toyohisa 富山高等専門学校, 機械システム工学科, 教授 (70574565)
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| Project Period (FY) |
2017-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2019: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2018: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2017: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | イオンビーム / プラズマ / 微細加工 / エッチング / 多価イオン / 電子サイクロトロン共鳴イオン源 / ウィーンフィルタ / プラズマ加工 |
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| Outline of Final Research Achievements |
The plasma etching rate of titanium plate was improved to 1 μm/min by applying a radio-frequency of 1 MHz instead of 13.56 MHz to the processing stage. We have developed a new multicharged ion beam assisted processing system consisting of an ECR ion source, a Wien filter, and a processing stage. A commercially available 1.2-GHz transceiver was adopted as a microwave source to generate the ECR plasma. The Wien filter with orthogonal electric and magnetic fields was employed as a beam separator. Ar ion beams with a current of approximately 62 μA were obtained at an extraction voltage of 4 kV. In addition, we demonstrated that Ar and Xe ions can be separated by the Wien filter. Multicharged ion beams such as Ar2+ and Xe3+ have been produced. The multicharged ion beams have improved the processing speed of silicon wafers by about 20%.
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| Academic Significance and Societal Importance of the Research Achievements |
これまで多価イオンビームを用いた応用は国立研究所等の研究機関に限られていた．本研究で開発した小型の多価イオンビーム装置は卓上サイズで安価なため，一般の材料研究者にも使いやすい．今後の継続開発によって実用化販売も可能となる．また，イオンビーム支援加工についてはイオンビームの効果を確認することができた．今後，反応ガスの多価イオンビームを用いるなどの追加実験によって，より高速加工が可能と考えている．
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