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Development of a new module type switch using next generation semiconductors

Research Project

Project/Area Number 17K06334
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Power engineering/Power conversion/Electric machinery
Research InstitutionJapan Atomic Energy Agency

Principal Investigator

Tomohiro TAKAYANAGI  国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門 J-PARCセンター, 研究主幹 (10354755)

Project Period (FY) 2017-04-01 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2019: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2018: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2017: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Keywords半導体デバイス / SiC / スイッチ回路 / モジュール基板 / 高電圧 / 大電流 / パルス / パルス出力 / 半導体スイッチ / 次世代半導体 / モジュール型回路 / 大電力高速短パルス / 高周波 / SiC-MOSFET / パルス出力波形 / 低インピーダンス化 / 環状型銅リング回路 / 次世代パワー半導体 / 多重化回路 / スイッチング回路 / 放射対称型回路 / 線対称型回路 / 回路インピーダンス / 高速伝送回路設計 / パワーエレクトロニクス
Outline of Final Research Achievements

A modular board of the switch circuit that enables high-power, high-speed, and short-pulse output by using SiC-MOSFET, which is one of the next-generation power semiconductors with excellent high-frequency characteristics and low loss has been designed and fabricated. In this switch, the circuit arrangement is a radial symmetric type of equal-length circuit with no difference in current propagation time and circuit impedance when paralleling the circuits required for large current. Moreover, the shape of the current propagation circuit between the boards connected in multiple stages in series has been changed to a ring-shaped type path, and a significant reduction of the inductance has been realized. From both experiment and analysis, it was confirmed that the developed module type switch circuit realized an ideal steep shape with little distortion in the output pulse waveform.

Academic Significance and Societal Importance of the Research Achievements

パワー半導体デバイスの技術開発は、重電メーカーや電力機器メーカーの分野である。しかし、SiC製のパワー半導体デバイス技術の開発は始まった段階であり世界中で市場がまだ形成されていない。本研究はパワー半導体の高性能化に伴い、これまでの電力変換器やパルス電源などの利用に限られた半導体デバイス技術の枠を超え、従来の性能では実現不可能であった高電圧、大電流、高速動作の性能が要求される放電型スイッチからの置換を見据えた産業技術の高度化へと展開ができる。本スイッチ回路の開発成果は、半導体デバイスの需要拡大を促し、更に、スイッチ回路の開発をメーカーに勧奨する意義をもたらす。

Report

(4 results)
  • 2019 Annual Research Report   Final Research Report ( PDF )
  • 2018 Research-status Report
  • 2017 Research-status Report
  • Research Products

    (8 results)

All 2019 2018

All Journal Article (3 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 2 results,  Open Access: 3 results) Presentation (5 results) (of which Int'l Joint Research: 3 results)

  • [Journal Article] Development of low inductance circuit for radially symmetric circuit2019

    • Author(s)
      Tomohiro TAKAYANAGI
    • Journal Title

      IOP SCIENCE Journal of Physics: Conference Series.

      Volume: 1350 Issue: 1 Pages: 012183-012183

    • DOI

      10.1088/1742-6596/1350/1/012183

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Development of a new modular switch using a next-generation semiconductor2018

    • Author(s)
      Tomohiro TAKAYANAGI
    • Journal Title

      IOP Conf. Series: Journal of Physics: Conf. Series (IPAC'18: IOP Light Peer Review Volume)

      Volume: 1067 Pages: 082019-082019

    • Related Report
      2018 Research-status Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] SiC-MOSFET を用いた半導体スイッチ電源の開発2018

    • Author(s)
      高柳 智弘
    • Journal Title

      Proceedings of the 15th Annual Meeting of Particle Accelerator Society of Japan

      Volume: - Pages: 244-248

    • Related Report
      2018 Research-status Report
    • Open Access
  • [Presentation] パワー半導体を用いたキッカー用パルス電源とイグナイトロン代替スイッチの開発2019

    • Author(s)
      高柳 智弘,小野 礼人,植野 智晶,堀野 光喜,山本 風海,金正 倫計
    • Organizer
      加速器学会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Development of low inductance circuit for radially symmetric circuit2019

    • Author(s)
      T. Takayanagi, T. Ueno, K. Horino
    • Organizer
      IPAC2018
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Development of a new modular switch using a next-generation semiconductor2018

    • Author(s)
      Tomohiro TAKAYANAGI
    • Organizer
      IPAC'18
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] New design and developmentfor an ultrahigh-voltage short pulse switch power supply2018

    • Author(s)
      Tomohiro TAKAYANAGI
    • Organizer
      EAPPC
    • Related Report
      2018 Research-status Report
    • Int'l Joint Research
  • [Presentation] SiC-MOSFET を用いた半導体スイッチ電源の開発2018

    • Author(s)
      高柳 智弘
    • Organizer
      加速器学会2018
    • Related Report
      2018 Research-status Report

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Published: 2017-04-28   Modified: 2021-02-19  

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