Selective Cu-deposition using CuI as prucursor
| Project/Area Number |
17K06339
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Ibaraki University |
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Principal Investigator |
Yamauchi Satoshi 茨城大学, 理工学研究科(工学野), 教授 (30292478)
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| Co-Investigator(Kenkyū-buntansha) |
城塚 達也 茨城大学, 理工学研究科(工学野), 助教 (70823003)
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| Project Period (FY) |
2017-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2019: ¥130,000 (Direct Cost: ¥100,000、Indirect Cost: ¥30,000)
Fiscal Year 2018: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2017: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 銅の化学気相堆積 / 銅薄膜の選択形成 / ヨウ化銅（I)原料 / 第一原理計算 / 銅薄膜の選択生成 / ヨウ化銅原料 / 銅配線 / 電子デバイス・機器 / 電子・電気材料 / デバイス設計・製造プロセス |
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| Outline of Final Research Achievements |
In this research, low-pressure chemical vapor deposition using copper-iodide(CuI) was developed to achieve selective Cu-deposition on metal-surface aiming at using for metallization-process on ULSI-fabrication. [RESULT-1] CuI is sublimated as trimer at low-temperature around 300oC in low-pressure environment. [RESULT-2] Cu is selectively deposited on metal-surface at low temperature around 300oC. [RESULT-3] Low-resistive Cu could be deposited at 370oC by control of CuI-supply rate. [RESULR-4] Self-dissociation scheme of CuI on metal surface was suggested by ab-initio calculations.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究で開発したCuの選択形成技術は、安価で安定性も高い原料を使用し減圧中で昇華させ加熱した基材上に供給するといった極めて簡略化された方法にも関わらず、これまで実現できなかった選択形成を３００℃程度の低温で実現できる点で非常に有用な方法であり、集積回路の配線工程の簡略化などに寄与できると期待できる。本研究で提案した原料の分解機構は従来の熱分解とは全く異なり、この分解過程による選択成長機構は今後の金属の選択堆積方法の開発に広く応用できる可能性が高い。
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Report
(4 results)
Research Products
(5 results)
